2024-08-15 | | Total: 19

In this study, we investigate the effect of mixed surface terminations (F, O, OH) on the properties of M$_{2}$C MXenes (M = Sc, Ti, V). We explore how different compositions and patterns of terminal groups affect the stability and electronic properties of these 2D materials. The bond dissociation energies and cohesion energies show a clear preference for F-terminations in Sc$_{2}$C, while Ti- and V-based MXenes prefer O-terminations. The data indicates that terminal groups on opposite sides of the MXene have little to no influence on each other's electronic structure, allowing for independent chemical environments on each side. Semiconducting forms of studied MXenes (Sc$_{2}$CF$_{2}$, Sc$_{2}$C(OH)$_{2}$ and Ti$_{2}$CO$_{2}$) showed very high sensitivity to conduction-inducing terminations (O, O, and F, respectively) with even minuscule amounts ($\approx$1%) causing the materials to become conductive. This high sensitivity of the band gap to surface terminations may offer an explanation for the challenges in synthesizing semiconducting forms of MXenes.

P-wave superconductors hold immense promise for both fundamental physics and practical applications due to their unusual pairing symmetry and potential topological superconductivity. However, the exploration of the p-wave superconductors has proved to be a complex endeavor. Not only are they rare in nature but also the identification of p-wave superconductors has been an arduous task in history. For example, phase-sensitive measurement, an experimental technique which can provide conclusive evidence for unconventional pairing, has not been implemented successfully to identify p-wave superconductors. Here, we study a recently discovered family of superconductors, A2Cr3As3 (A = K, Rb, Cs), which were proposed theoretically to be a candidate of p-wave superconductors. We fabricate superconducting quantum interference devices (SQUIDs) on exfoliated K2Cr3As3, and perform the phase-sensitive measurement. We observe that such SQUIDs exhibit a pronounced second-order harmonic component sin(2{\phi}) in the current-phase relation, suggesting the admixture of 0- and {\pi}-phase. By carefully examining the magnetic field dependence of the oscillation patterns of critical current and Shapiro steps under microwave irradiation, we reveal a crossover from 0- to {\pi}-dominating phase state and conclude that the existence of the {\pi}-phase is in favor of the p-wave pairing symmetry in K2Cr3As3.

We demonstrate low power, forming and compliance-free operation of a resistive memory obtained by the partial oxidation of a two-dimensional layered van-der-Waals semiconductor: hafnium disulfide (HfS$_2$). Semiconductor - oxide heterostructures are achieved by low temperature ($<300^{o}$C) thermal oxidation of HfS$_2$ in dry conditions, carefully controlling process parameters such as pressure, temperature and oxygen flow. The resulting HfO$_x$S$_y$/HfS$_2$ heterostructures are integrated between metal contacts, forming vertical crossbar devices. Forming-free, compliance-free resistive switching between two non-volatile states is demonstrated by applying voltage sweeps. By applying voltage pulses and measuring the current response in time, we show non-volatile memory operation programmable by 60ns, $<$ 20pJ WRITE and ERASE operations. Multiple stable resistance states are achievable by pulse width and amplitude modulation demonstrating the capability for multi-state programming. Resistance states were retained without fail at 85$^o$C and 150$^o$C, showcasing the potential of these devices for long retention times. Using a technology computer-aided design (TCAD) tool (Synopsys Sentaurus, 2022), we explore the role of the semiconductor layer in tuning the device conductance and driving gradual resistive switching in 2D HfO$_x$ - based devices.

We present a formalism for developing cyclic and helical symmetry-informed machine learned force fields (MLFFs). In particular, employing the smooth overlap of atomic positions descriptors with the polynomial kernel method, we derive cyclic and helical symmetry-adapted expressions for the energy, atomic forces, and phonons (describe lattice vibration frequencies and modes). We use this formulation to construct a symmetry-informed MLFF for carbon nanotubes (CNTs), where the model is trained through Bayesian linear regression, with the data generated from ab initio density functional theory (DFT) calculations performed during on-the-fly symmetry-informed MLFF molecular dynamics simulations of representative CNTs. We demonstrate the accuracy of the MLFF model by comparisons with DFT calculations for the energies and forces, and density functional perturbation theory calculations for the phonons, while considering CNTs not used in the training. In particular, we obtain a root mean square error of $1.4 \times 10^{-4}$ Ha/atom, $4.7 \times 10^{-4}$ Ha/Bohr, and 4.8 cm$^{-1}$ in the energy, forces, and phonon frequencies, respectively, which are well within the accuracy targeted in ab initio calculations. We apply this framework to study phonons in CNTs of various diameters and chiralities, where we identify the torsional rigid body mode that is unique to cylindrical structures and establish laws for variation of the phonon frequencies associated with the ring modes and radial breathing modes. Overall, the proposed formalism provides an avenue for studying nanostructures with cyclic and helical symmetry at ab initio accuracy, while providing orders-of-magnitude speedup relative to such methods.

Berry phase is one of the key elements to understand quantum-mechanical phenomena such as the Aharonov-Bohm effect and the unconventional Hall effect in graphene. The Berry phase in monolayer and bilayer graphene has been manifested by the anisotropic distribution of photoelectron intensity along a closed loop in the momentum space as well as its rotation by a characteristic angle upon rotating light polarization. Here we report the band-selective simulation of photoelectron intensity of trilayer graphene to understand its Berry phase within the tight-binding formalism. ABC- and ABA-stacked trilayer graphene show characteristic rotational angles of photoelectron intensity distribution, as predicted from their well-known Berry phases. Surprisingly, however, in ABA-stacked trilayer graphene, the rotational angle changes upon approaching toward the band touching point between the conduction and valence bands, which suggest that Berry phase changes as a function of binding energy. The binding energy-dependent Berry phase is attributed to the enhanced hybridization of the two electron bands of ABA-stacked trilayer graphene that converge at the band touching point, resulting in the converging Berry phase. These findings will provide an efficient way of tuning Berry phase and hence exotic phenomena stemming from the Berry phase.

Quantum corrections to electron dynamics under an oscillating electromagnetic field are found within the Floquet theory of periodically driven quantum systems. It is demonstrated that emission of photons by an electron oscillating under the field is asymmetric with respect to the direction of its forward movement. Since emission of each photon is accompanied by momentum transfer to the electron, such a skew emission leads to the quantum recoil force decelerating the electron. Possible manifestations of this phenomenon are discussed for various electronic systems driven by laser irradiation.

The roton-triggered charge-density-wave (CDW)is widely studied in fractional quantum Hall (FQH) and fractional Chern insulator (FCI) systems, and there also exist field theoretical and numerical realizations of continuous transition from FCI to superfluid (SF). However, the theory and numerical explorations of the transition between FCI and supersolid (SS) are still lacking. In this work, we study the topological flat-band lattice models with $\nu$ = 1/2 hard-core bosons, where the previous studies have discovered the existence of FCI states and possible direct FCI-SS transitions. While the FCI is robust, we find the direct FCI-SS transition is absent, and there exist more intriguing scenarios. In the case of checkerboard lattice, we find an intermediate gapless CDW state without SF, sandwiched between FCI and SS. This novel state is triggered by the roton instability in FCI and it further continuously brings about the intertwined finite-momentum SF fluctuation when the CDW order is strong enough, eventually transiting into an unconventional finite-momentum SS state. The intermediate gapless CDW state is a vestige from the SS state, since the increasing quantum fluctuation melts only the Larkin-Ovchinnikov-type SF order in SS but its (secondary) product -- the CDW order -- survives. On honeycomb lattice, we find no evidence of SS, but discover an interesting sequence of FCI-Solid I-Solid II transitions, with both solids incompressible. Moreover, in contrast to previous single-roton condensation, this sequence of FCI-Solid I-Solid II transitions is triggered by the softening of multi-roton modes in FCI. Considering the intertwined wave vectors of the CDW orders, Solid I is a vestige of Solid II. Our work provides new horizon not only for the quantum phase transitions in FCI but also for the intertwined orders and gapless states in bosonic systems, which will inspire future studies.

Many experimental works reported the generation of valley-polarized currents in two-dimensional materials. However, most efforts require the application of external magnetic fields. Gate-defined valley-helical narrow channels offer a magnetic field-free approach to generate valley currents. However, achieving perfect helical transport in such gate-defined devices remains challenging due to stringent requirements for gate alignment. Misalignments lead to the presence of non-helical states that suppress the efficiency of these devices. Here, we propose an alternative gate layout to overcome the fabrication challenges. Our layout creates a series of helical quantum point contacts that suppress the transmission of non-helical modes. We show that such a layout can be implemented with four layers of independent gates or two layers of split gates. Thus, our approach offers a robust magnetic field-free platform to generate valley-polarized currents.

In this work we demonstrate a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) that operates in an Accumulation Channel rather than Transfer Doping regime. Our FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated $Al_2O_3$ is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of $Al_2O_3$. Completed devices with gate/channel length of $1 \mu m$ demonstrate record threshold voltage $< -6 V$ with on-current $> 80 mA/mm$. Carrier density and mobility figures extracted by CV analysis indicate high 2D charge density of $~ 2 \times 10^{12} cm^{-2}$ and increased hole mobility of $110 cm^2 /V \cdot s$ in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a new strategy for the development of high-performance power devices that better exploit diamond's intrinsic dielectric properties and high hole mobility.

The realization of electron-spin resonance at the single-atom level using scanning tunneling microscopy has opened new avenues for coherent quantum sensing and quantum state manipulation at the ultimate size limit. This allows to build many-body Hamiltonians and the study of their complex physical behavior. Recently, a novel qubit platform has emerged from this field, raising questions about the driving mechanism from single-atom magnets. In this work, we demonstrate how single-atom magnets can be used to drive a nearby single spin qubit efficiently, while also addressing critical aspects related to the optimization of experimental parameters.

Various properties of interlayer excitons in double-layer transition metal dichalcogenides quantum dots are analyzed using a low-energy effective Hamiltonian with Coulomb interaction. We solve the single-particle Hamiltonian with and without a magnetic field analytically, then present the electron-hole pairing features of interlayer exciton by employing the exact diagonalization technique, where the electron and hole are located in two layers respectively. In a magnetic field, the Landau level gap, as well as the electron-hole separation of an exciton varies non-monotonously as the interlayer distance increases, attributed to the pseudospin-orbit coupling which also leads to the emergence of topological non-trivial pseudospin textures in the exciton states. We examine the influence of different materials in quantum dots stacking on the exciton states, comparing their impact to variations in layer distances and quantum dot sizes. We further explore two interacting interlayer excitons numerically. The binding energy is significantly enhanced by the exchange interaction when the two electrons have different spins. The optical absorption spectra from the ground state to low-lying excited states reveal distinct behaviors for different interlayer excitons, which can be utilized to distinguish the spin of electrons in excitons. Our results highlight the potential for controlling interlayer excitons and applications of optical devices in a magnetic field and tunable layer distance.

Graphene nanoribbon (GNR) emerges as an exceptionally promising channel candidate due to its tunable sizable bandgap (0-3 eV), ultrahigh carrier mobility (up to 4600 cm^(2) V^(-1) s^(-1)), and excellent device performance (current on-off ratio of 10^(7)). However, the asymmetry of reported n-type and p-type GNR field-effect transistors (FETs) at ultrashort gate length (Lg) has become an obstacle to future complementary metal-oxide-semiconductor (CMOS) integration. Here, we conduct ab initio quantum transport simulations to investigate the transport properties of sub-5-nm Lg 7 armchair-edge GNR (7 AGNR) FETs. The on-state current, delay time, and power dissipation of the n-type and p-type 7 AGNR FETs fulfill the International Technology Roadmap for Semiconductors targets for high-performance devices when Lg is reduced to 3 nm. Remarkably, the 7 AGNR FETs exhibit superior n-type and p-type symmetry to the 7-9-7 AGNR FETs due to the more symmetrical electron/hole effective masses. Compared to the monolayer MoS2 and MoTe2 counterparts, the 7 AGNR FETs have better device performance, which could be further improved via gate engineering. Our results shed light on the immense potential of 7 AGNR in advancing CMOS electronics beyond silicon.

Wide bandgap oxide semiconductors are very promising channel candidates for next-generation electronics due to their large-area manufacturing, high-quality dielectrics, low contact resistance, and low leakage current. However, the absence of ultra-short gate length (Lg) p-type transistors has restricted their application in future complementary metal-oxide-semiconductor (CMOS) integration. Inspired by the successfully grown high-hole mobility bilayer (BL) beta tellurium dioxide (\b{eta}-TeO2), we investigate the performance of sub-5-nm-Lg BL \b{eta}-TeO2 field-effect transistors (FETs) by utilizing first-principles quantum transport simulation. The distinctive anisotropy of BL \b{eta}-TeO2 yields different transport properties. In the y-direction, both the sub-5-nm-Lg n-type and p-type BL \b{eta}-TeO2 FETs can fulfill the International Technology Roadmap for Semiconductors (ITRS) criteria for high-performance (HP) devices, which are superior to the reported oxide FETs (only n-type). Remarkably, we for the first time demonstrate the existence of the NMOS and PMOS symmetry in sub-5-nm-Lg oxide semiconductor FETs. As to the x-direction, the n-type BL \b{eta}-TeO2 FETs satisfy both the ITRS HP and low-power (LP) requirements with Lg down to 3 nm. Consequently, our work shed light on the tremendous prospects of BL \b{eta}-TeO2 for CMOS application.

The collective reorganization of electrons into a charge density wave (CDW) inside a crystal has long served as a textbook example of an ordered phase in condensed matter physics. Two-dimensional square lattices with $p$ electrons are well-suited to the realization of CDW, due to the anisotropy of the $p$ orbitals and the resulting one dimensionality of the electronic structure. In spite of a long history of study of CDW in square-lattice systems, few reports have recognized the existence and significance of a hidden orbital degree of freedom. The degeneracy of $p_x$ and $p_y$ electrons inherent to a square lattice may give rise to nontrivial orbital patterns in real space that endow the CDW with additional broken symmetries or unusual order parameters. Using scanning tunneling microscopy, we visualize signatures of $p$-orbital texture in the CDW state of the topological semimetal candidate CeSbTe, which contains Sb square lattices with 5$p$ electrons. We image atomic-sized, anisotropic lobes of charge density with periodically modulating anisotropy, that ultimately can be mapped onto a microscopic pattern of $p_x$ and $p_y$ bond density waves. Our results show that even delocalized $p$ orbitals can reorganize into unexpected and emergent electronic states of matter.

The first quantum fractal discovered in physics is the Hofstadter butterfly. It stems from large external magnetic fields. We discover instead a new class of non-Hermitian quantum fractals (NHQFs) emerging in coupled Hatano-Nelson models on a tree lattice in absence of any fields. Based on analytic solutions, we are able to rigorously identify the self-similar recursive structures in energy spectrum and wave functions. We prove that the complex spectrum of NHQFs bears a resemblance to the Mandelbrot set in fractal theory. The self-similarity of NHQFs is rooted in the interplay between the iterative lattice configuration and non-Hermiticity. Moreover, we show that NHQFs exist in generalized non-Hermitian systems with iterative lattice structures. Our findings open a new avenue for investigating quantum fractals in non-Hermitian systems.

The skin effect, where bulk modes collapse into boundary modes, is a key phenomenon in topological non-Hermitian systems, has been predominantly studied in spinless systems. Recent studies illustrate the magnetic suppression of the first-order skin effect while ignoring spin. However, the physical significance of a magnetic field in non-Hermitian skin effect with spin remains elusive. Here, we systematically explore non-Hermitian spinful systems based on generalized Hatano-Nelson models with SU(2) gauge potential fields. In an open one-dimensional lattice, the spin-up and spin-down states can be uniquely separated and localized at the two boundaries without magnetic field. When an external magnetic field is applied, the skin effect exhibits a smooth transition from bidirectional to unidirectional. Remarkably, we demonstrate that the first-order skin effect can be anomalously induced by a magnetic field in a topologically trivial non-Hermitian spinful system without any skin effect at zero field. The direction of such magnetically induced skin modes can be controlled by simply changing the amplitude and polarity of the magnetic field. In addition, we demonstrate a transition between non-Bloch PT and anti-PT symmetries in the system, and uncover the spindependent mechanism of non-Bloch PT symmetry. Our results pave the way for the investigation of non-Hermitian skin effect with spin degrees of freedom.

Ge two-dimensional hole gases in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge two-dimensional hole gas (2DHG) can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG - a prerequisite for the realization of spintronic devices - has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm. We observe a magnetoresistance signal for temperatures below 13 K possibly arising from successful spin injection. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.

Two-dimensional materials are extraordinarily sensitive to external stimuli, making them ideal for studying fundamental properties and for engineering devices with new functionalities. One such stimulus, strain, affects the magnetic properties of the layered magnetic semiconductor CrSBr to such a degree that it can induce a reversible antiferromagnetic-to-ferromagnetic phase transition. Given the pervasiveness of non-uniform strain in exfoliated two-dimensional magnets, it is crucial to understand its impact on their magnetic behavior. Using scanning SQUID-on-lever microscopy, we directly image the effects of spatially inhomogeneous strain on the magnetization of layered CrSBr as it is polarized by a field applied along its easy axis. The evolution of this magnetization and the formation of domains is reproduced by a micromagnetic model, which incorporates the spatially varying strain and the corresponding changes in the local interlayer exchange stiffness. The observed sensitivity to small strain gradients along with similar images of a nominally unstrained CrSBr sample suggest that unintentional strain inhomogeneity influences the magnetic behavior of exfoliated samples and must be considered in the design of future devices.

In perovskite oxide heterostructures, bulk functional properties coexist with emergent physical phenomena at epitaxial interfaces. Notably, charge transfer at the interface between two insulating oxide layers can lead to the formation of a two-dimensional electron gas (2DEG) with possible applications in, e.g., high-electronmobility transistors and ferroelectric field-effect transistors. So far, the realization of oxide 2DEGs is, however, largely limited to the interface between the single-crystal substrate and epitaxial film, preventing their deliberate placement inside a larger device architecture. Additionally, the substrate-limited quality of perovskite oxide interfaces hampers room-temperature 2DEG performance due to notoriously low electron mobility. In this work, we demonstrate the controlled creation of an interfacial 2DEG at the epitaxial interface between perovskite oxides BaSnO$_3$ and LaInO$_3$ with enhanced room-temperature electron mobilities up to 119 cm$^2$/Vs - the highest room-temperature value reported so far for a perovskite oxide 2DEG. Using a combination of state-of-the-art deposition modes during oxide molecular beam epitaxy, our approach opens up another degree of freedom in optimization and $in$-$situ$ control of the interface between two epitaxial oxide layers away from the substrate interface. We thus expect our approach to apply to the general class of perovskite oxide 2DEG systems and to enable their improved compatibility with novel device concepts and integration across materials platforms.