2025-04-18 | | Total: 7
Parametric arrays (PA) offer exceptional directivity and compactness compared to conventional loudspeakers, facilitating various acoustic applications. However, accurate measurement of audio signals generated by PA remains challenging due to spurious ultrasonic sounds arising from microphone nonlinearities. Existing filtering methods, including Helmholtz resonators, phononic crystals, polymer films, and grazing incidence techniques, exhibit practical constraints such as size limitations, fabrication complexity, or insufficient attenuation. To address these issues, we propose and demonstrate a novel acoustic filter based on the design of a half-wavelength resonator. The developed filter exploits the nodal plane in acoustic pressure distribution, effectively minimizing microphone exposure to targeted ultrasonic frequencies. Fabrication via stereolithography (SLA) 3D printing ensures high dimensional accuracy, which is crucial for high-frequency acoustic filters. Finite element method (FEM) simulations guided filter optimization for suppression frequencies at 40 kHz and 60 kHz, achieving high transmission loss (TL) around 60 dB. Experimental validations confirm the filter's superior performance in significantly reducing spurious acoustic signals, as reflected in frequency response, beam pattern, and propagation curve measurements. The proposed filter ensures stable and precise acoustic characterization, independent of measurement distances and incidence angles. This new approach not only improves measurement accuracy but also enhances reliability and reproducibility in parametric array research and development.
Multigap cavities are used extensively in linear accelerators to achieve velocities up to a few percent of the speed of light, driving nuclear physics research around the world. Unlike for single-gap structures, there is no closed-form expression to calculate the output beam parameters from the cavity voltage and phase. To overcome this, we propose to use a method based on the integration of the first and second moments of the beam distribution through the axially symmetric time-dependent fields of the cavity. A beam-based calibration between the model's electric field scaling and the machine's rf amplitudes is presented, yielding a fast online energy change method, returning cavity amplitude and phase necessary for a desired output beam energy and energy spread. The method is validated with 23Na6+ beam energy measurements.
The single-band high-efficiency light absorption of nanostructures finds extensive applications in var ious fields such as photothermal conversion, optical sensing, and biomedicine. In this paper, a vertically stacked nanohybrid structure is designed with aluminum arsenide (AlAs), indium tin ox ide (ITO) and gallium arsenide (GaAs) stacked, and the photon absorption characteristics of this structure under near-infrared light at a single wavelength of 1240 nm are exploredbased on the finite difference time domain (FDTD) method. When AlAs, ITO, and GaAs are stacked and incident light enters from the GaAs side, a local light enhancement phenomenon occurs. The absorption rate can reach 91.67%, and the temperature change rate reaches 55. 53%, allowing for a wide-range regulation the absorption rate by temperature. In addition, the AlAs/ITO/GaAs sandwich-type hybrid structure also exhibits obvious nonreciprocity. With the change in temperature, the absorption rate of different structural sizes varies differently. The structure can be optimized and designed according to the requirements, providing new ideas for the design of multifunctional optoelectronic devices.
We report on the design and demonstration of ultra-wide bandgap (UWBG) AlGaN-channel metal-insulator heterostructure field effect transistors (HEFTs) for high-power, high-frequency applications. We find that the integration of gate dielectrics and field plates greatly improves the breakdown field in these devices, with state-of-art average breakdown field of 5.3 MV/cm (breakdown voltage > 260 V) with an associated maximum current density of 342 mA/mm, and cut-off frequency of 9.1 GHz. Furthermore, low trap-related impact was observed from minimal gate and drain lag estimated from pulsed I-V characteristics. The reported results provide the potential of UWBG AlGaN HEFTs for the next generation high-power radio frequency applications.
Arrayed Waveguide Gratings (AWGs) are widely used photonic components for splitting and combining different wavelengths of light. They play a key role in wavelength division multiplexing (WDM) systems by enabling efficient routing of multiple data channels over a single optical fiber and as a building block for various optical signal processing, computing, imaging, and spectroscopic applications. Recently, there has been growing interest in integrating AWGs in ferroelectric material platforms, as the platform simultaneously provide efficient electro-optic modulation capability and thus hold the promise for fully integrated WDM transmitters. To date, several demonstrations have been made in the X-cut thin-film lithium niobate ($\mathrm{LiNbO}_3$) platform, yet, the large anisotropy of $\mathrm{LiNbO}_3$ complicates the design and degrades the performance of the AWGs. To address this limitation, we use the recently developed photonic integrated circuits (PICs) based on thin-film lithium tantalate ($\mathrm{LiTaO}_3$), a material with a similar Pockels coefficient as $\mathrm{LiNbO}_3$ but significantly reduced optical anisotropy, as an alternative viable platform. In this work, we manufacture $\mathrm{LiTaO}_3$ AWGs using deep ultraviolet lithography on a wafer-scale. The fabricated AWGs feature a channel spacing of 100 GHz, an insertion loss of < 4 dB and crosstalk of < -14 dB. In addition, we demonstrate a cyclic AWG, as well as a multiplexing and demultiplexing AWG pair for the first time on $\mathrm{LiTaO}_3$ platform. The wafer-scale fabrication of these AWGs not only ensures uniformity and reproducibility, but also paves the way for realizing volume-manufactured integrated WDM transmitters in ferroelectric photonic integrated platforms.
Conventional electronics is founded on a paradigm where shaping perfect electrical elements is done at the fabrication plant, so as to make devices and systems identical, "eternally immutable". In nature, morphogenic evolutions are observed in most living organisms and exploit topological plasticity as a low-resource mechanism for in operando manufacturing and computation. Often fractal, the resulting topologies feature inherent disorder: a property which is never exploited in conventional electronics manufacturing, while necessary for data generation and security in software. In this study, we present how such properties can be exploited to implement long-term and evolvable synaptic plasticity in an electronic hardware. The rich topology of conducting polymer dendrites (CPDs) is exploited to program the non-ideality of their electrochemical capacitances containing constant-phase-elements. Their evolution through structural changes alters the characteristic time constants for them to charge and discharge with the applied voltage stimuli. Under a train of voltage spikes, the evolvable current relaxation of the electrochemical systems promotes short-term plasticity with timescales ranging from milliseconds to seconds. This large window depends on the temporality of the voltage pulses used for reading, but also on the structure of a pair of CPDs on two electrodes, grown by voltage pulses. This study demonstrates how relevant physically transient and non-ideal electrochemical components can be exploited for unconventional electronics, with the aim to mimic a universal property of living organisms which could barely be replicated in a silicon monocrystal.
Recent studies have applied variational calculus, conformal mapping, and point transformations to generalize the one-dimensional (1D) space-charge limited current density (SCLCD) and electron emission mechanisms to nonplanar geometries; however, these assessments have focused on extending the Child-Langmuir law (CLL) for SCLCD in vacuum. Since the charge in the diode is independent of coordinate system (i.e., covariant), we apply bijective point transformations to extend the Mott-Gurney law (MGL) for the SCLCD in a collisional or semiconductor gap to nonplanar 1D geometries. This yields a modified MGL that replaces the Cartesian gap distance with a canonical gap distance that may be written generally in terms of geometric scale factors that are known for multiple geometries. We tabulate results for common geometries. Such an approach may be applied to any current density, including non-space-charge limited gaps and SCLCD that may fall between the CLL and MGL.