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Stimulated Brillouin Scattering (SBS) is a nonlinear interaction between optical and acoustic waves in solids. First regarded as a parasitic process in optical fibers, it has gathered significant interest in microwave photonic applications such as optical signal processing and narrow linewidth lasers. While many Brillouin system demonstrations have been done on photonic chips, they struggle to provide simultaneous high Brillouin gain and narrow linewidth in a scalable platform, capable of integration with established photonic integrated circuits. Here, we present a novel integrated InGaP-on-SiO$_2$ platform, where a single crystalline InGaP waveguide layer offers superior material properties and strong nonlinearities to support SBS near 1550 nm wavelength. We demonstrate backward SBS with a measured high Brillouin gain coefficient of $588\, \mathrm{W}^{-1}\,\mathrm{m}^{-1}$ and a record narrow linewidth of 5.2 MHz at 9.346 GHz frequency shift. This work establishes a wafer-scale complementary metal-oxide semiconductor compatible fabrication process, paving a scalable path for high gain and narrow linewidth Brillouin photonics with applications such as precision signal processing.