2024-10-29 | | Total: 5
Large Language Models (LLMs) have shown great potential in automating code generation; however, their ability to generate accurate circuit-level SPICE code remains limited due to a lack of hardware-specific knowledge. In this paper, we analyze and identify the typical limitations of existing LLMs in SPICE code generation. To address these limitations, we present SPICEPilot a novel Python-based dataset generated using PySpice, along with its accompanying framework. This marks a significant step forward in automating SPICE code generation across various circuit configurations. Our framework automates the creation of SPICE simulation scripts, introduces standardized benchmarking metrics to evaluate LLM's ability for circuit generation, and outlines a roadmap for integrating LLMs into the hardware design process. SPICEPilot is open-sourced under the permissive MIT license at https://github.com/ACADLab/SPICEPilot.git.
The planned high-luminosity upgrade of the Large Hadron Collider (LHC) at CERN will bring much higher data rates that are far above the capabilities of currently installed software-based data processing systems. Therefore, new methods must be used to facilitate on-the-fly extraction of scientifically significant information from the immense flow of data produced by LHC particle detectors. This paper focuses on implementation of a tau lepton triggering algorithm in FPGA. Due to the algorithm's complexity and strict technical requirements, its implementation in FPGA fabric becomes a particularly challenging task. The paper presents a study of algorithm development with the help of High-Level Synthesis (HLS) technique that can generate hardware description from C++ code. Various architectural solutions and optimizations that were tried out during the design architecture exploration process are also discussed in the paper.
For critical applications that require a higher level of reliability, the Triple Modular Redundancy (TMR) scheme is usually employed to implement fault-tolerant arithmetic units. However, this method imposes a significant area and power/energy overhead. Also, the majority-based voter in the typical TMR designs is highly sensitive to soft errors and the design diversity of the triplicated module, which may result in an error for a small difference between the output of the TMR modules. However, a wide range of applications deployed in critical systems are inherently error-resilient, i.e., they can tolerate some inexact results at their output while having a given level of reliability. In this paper, we propose a High Precision Redundancy Multiplier (HPR-Mul) that relies on the principles of approximate computing to achieve higher energy efficiency and lower area, as well as resolve the aforementioned challenges of the typical TMR schemes, while retaining the required level of reliability. The HPR-Mul is composed of full precision (FP) and two reduced precision (RP) multipliers, along with a simple voter to determine the output. Unlike the state-of-the-art Reduced Precision Redundancy multipliers (RPR-Mul) that require a complex voter, the voter of the proposed HPR-Mul is designed based on mathematical formulas resulting in a simpler structure. Furthermore, we use the intermediate signals of the FP multiplier as the inputs of the RP multipliers, which significantly enhance the accuracy of the HPR-Mul. The efficiency of the proposed HPR-Mul is evaluated in a 15-nm FinFET technology, where the results show up to 70% and 69% lower power consumption and area, respectively, compared to the typical TMR-based multipliers. Also, the HPR-Mul outperforms the state-of-the-art RPR-Mul by achieving up to 84% higher soft error tolerance.
Benchmarking of noise that is induced during the implementation of quantum gates is the main concern for practical quantum computers. Several protocols have been proposed that empirically calculate various metrics that quantify the error rates of the quantum gates chosen from a preferred gate set. Unitarity randomized benchmarking (URB) protocol is a method to estimate the coherence of noise induced by the quantum gates which is measured by the metric \textit{unitarity}. In this paper, we for the first time, implement the URB protocol in a quantum simulator with all the parameters and noise model are used from a real quantum device. The direct implementation of the URB protocol in a quantum device is not possible using current technologies, as it requires the preparation of mixed states. To overcome this challenge, we propose a modification of the URB protocol, namely the m-URB protocol, that enables us to practically implement it on any quantum device. We validate our m-URB protocol using two single-qubit noise channels -- (a) depolarising channel and (b) bit-flip channel. We further alter the m-URB protocol, namely, native gate URB or Ng-URB protocol, to study the noise in the native gates into which the quantum circuits are compiled in a quantum computer. Using our Ng-URB protocol, we can also detect the presence of cross-talk errors which are correlated errors caused due to non-local and entangling gates such as CNOT gate. For illustration, we simulate the noise of the native gates taking the noise parameter from two real IBM-Q processors.
There have been a plethora of research on multi-level memory devices, where the resistive random-access memory (RRAM) is a prominent example. Although it is easy to write an RRAM device into multiple (even quasi-continuous) states, it suffers from the inherent variations that should limit the storage capacity, especially in the open-loop writing scenario. There have been many experimental results in this regard, however, it lacks a comprehensive analysis of the valid multi-bit storage capability, especially in theoretical terms. The absence of such an insight usually results in misleading conclusions that either exaggerate or underestimate the storage capacity of RRAM devices. Here, by the concept of information theory, we present a model for evaluating the storage capacity of open-loop written RRAM. Based on the experimental results in the literature and the test results of our own devices, we have carefully examined the effects of number of pre-defined levels, conductance variation, and conductance range, on the storage capacity. The analysis leads to a conclusion that the maximum capacity of RRAM devices is around 4 bits.