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A counterclockwise hysteresis is observed at room temperature in the transfer characteristics of SrTiO$_3$ (STO) gated MoS$_2$ field effect transistor (FET) and attributed to bistable dipoles on the STO surface. The hysteresis is expectedly found to increase with increasing range, as well as decreasing rate, of the gate-voltage sweep. The hysteresis peaks near 350 K while the transconductance rises with rising temperature above the room temperature. This is attributed to a blocking transition arising from an interplay of thermal energy and an energy-barrier that separates the two dipole states. The dipoles are discussed in terms of the displacement of the puckered oxygen ions at the STO surface. Finally, the blocking enables a control on the threshold gate-voltage of the FET over a wide range at low temperature which demonstrates it as a heat assisted memory device.