2025-04-08 | | Total: 36
Efficient generation of out-of-plane (OOP) spin currents is crucial for advanced spintronic memory applications. However, the theoretical understanding and experimental implementation of robust OOP spin currents for high-density and low-power magnetization switching remain significant challenges of spintronics. Here, we demonstrate that transitioning NbIrTe4 from a two-dimensional quantum spin Hall insulator to a three-dimensional type-II Weyl semimetal markedly enhances OOP spin current generation. The bulk topological Weyl semimetal nature of NbIrTe4, characterized by its Weyl cone, significantly enhances the OOP spin Berry curvature, enabling an unprecedented OOP spin Hall conductivity exceeding 105ℏ/2e Ω−1m−1. This enhancement, surpassing the in-plane component by more than fourfold, enables efficient and field-free spin-orbit torque (SOT) switching of perpendicular magnetization with a low current density of 1.4 MA/cm2. The improved spin Hall conductivity reduces the overall power consumption by more than two orders of magnitude compared to existing systems, such as heavy metals. Our findings highlight the pivotal role of dimensionality in harnessing robust OOP spin currents in topological Weyl semimetals, paving the way for the development of high-density, low-power spintronic memory technologies.
We report the observation of fractional shifts in the experimental stability diagrams of PbTe nanowire quantum dots. Although this behavior may appear to suggest fractional charge transport, akin to that reported in the fractional quantum Hall regime, the quasi-one-dimensionality of the system and absence of an applied magnetic field indicate that the presence of fractional charges is highly unlikely. We instead attribute these effects to the presence of one or more spurious dots, or charge traps, capacitively coupled to the primary dot. Our findings illustrate how signatures of fractional charge transport may be replicated through trivial mesoscopic Coulombic effects.
We demonstrate a violation of local reciprocity in the interconversion between charge and orbital currents. By investigating orbital torque and orbital pumping in W/Ni bilayers, we show that the charge-orbital interconversion in the bulk of the W layer exhibits opposite signs in the direct and inverse processes -- the direct and inverse orbital Hall effects being positive and negative, respectively. This finding provides direct evidence of local non-reciprocity in the charge-orbital interconversion, in agreement with a theoretical prediction. These results highlight the unique characteristics of charge-orbital coupled transport and offer fundamental insights into the mechanisms underlying orbital-current-driven phenomena.
We report the discovery of a unique superconducting phase in rhombohedral hexalayer graphene characterized by its simultaneous emergence with both the anomalous Hall effect and stripe charge order. The onset of stripe charge order is revealed through angle-resolved transport measurements, which show thermally activated insulating behavior along one axis and highly conductive transport along the orthogonal direction. Superconductivity develops exclusively along the high-conductivity axis, giving rise to a one-dimensional-like superconducting channel. This superconducting state exhibits first-order transitions under an out-of-plane magnetic field, consistent with a chiral order parameter that breaks time-reversal symmetry. Most remarkably, thermally driven superconducting transitions display pronounced hysteresis-an uncommon phenomenon that reflects the complex interplay among stripe formation, broken time-reversal symmetry, and superconductivity. Together, these results uncover a previously unidentified quantum phase: a chiral superconductor embedded within an anomalous Hall crystal.
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolithically integrated SET placed next to a double quantum dot in a Si/SiGe heterostructure is wire-bonded to a superconducting niobium inductor forming the impedance-transforming network. Compared to RF reflectometry, the proposed set-up is experimentally simpler without the need for directional couplers. Read-out performance is benchmarked by the signal-to-noise (SNR) of a dot-reservoir transition (DRT) and an interdot charge transition (ICT) in the double quantum dot near the SET as a function of RF power and integration time. The minimum integration time for unitary SNR is found to be 100 ns for ICT and 300 ns for DRT. The obtained minimum integration times are comparable to the state of the art in conventional RF reflectometry set-ups. Furthermore, we study the turn-on properties of the RF-SET to investigate capacitive shifts and RF losses. Understanding these effects are crucial for further optimisations of the impedance transforming network as well as the device design to assist RF read-out. This new RF read-out scheme also shows promise for multiplexing spin-qubit readout and further studies on rapid charge dynamics in quantum dots.
We study the fluctuations of generic currents in multi-terminal, multi-channel quantum transport settings. In the quantum regime, these fluctuations and the resulting precision differ strongly depending on whether the device is of fermionic or bosonic nature. Using scattering theory, we show that the precision is bounded by constraints set by the entropy production and by the activity in the spirit of thermodynamic or kinetic uncertainty relations, valid for fermionic and bosonic quantum systems and even in the absence of time-reversal symmetry. Furthermore, we derive a combined thermodynamic kinetic uncertainty relation, which is tight over a wide range of parameters and can hence predict the reachable precision of a device. Since these constraints can be expressed in terms of observables accessible in transport measurements, such as currents and bandwidth, we foresee that the tight thermodynamic kinetic uncertainty-like bounds are also useful as an inference tool: they can be exploited to estimate entropy production from transport observables, such as the charge current and its noise, which are more easily accessible in experiment.
The breakdown of conventional bulk-boundary correspondence, a cornerstone of topological physics, is one of counter-intuitive phenomena in non-Hermitian systems, that is deeply rooted in symmetry. In particular, preserved chiral symmetry is one of the key ingredients, which plays a pivotal role in determining non-Hermitian topology. Nevertheless, chiral symmetry breaking in non-Hermitian systems disrupts topological protection, modifies topological invariants, and substantially reshapes spectral and edge-state behavior. The corresponding fundamentally important bulk-boundary correspondence thus needs to be drastically reconstructed. However, it has so far eluded experimental efforts. Here, we theoretically predict and experimentally demonstrate the bulk-boundary correspondence of a one-dimensional (1D) non-Hermitian system with chiral symmetry breaking in discrete-time non-chiral non-unitary quantum walks of single photons. Through constructing a domain-wall configuration, we experimentally observe the photon localization at the interface of domain-wall structure, clearly indicating the presence of the topological edge mode. The appearance of that matches excellently with the prediction of our introduced non-chiral non-Bloch topological invariants pair. Our work thus unequivocally builds the non-Hermitian bulk-boundary correspondence as a general principle for studying topological physics in non-Hermitian systems with chiral symmetry breaking.
Understanding the mechanism of interfacial thermal transport is crucial for thermal management of electronics. Recent experiments have shown the strong impact of interfacial roughness on inelastic phonon scattering and interfacial thermal conductance (ITC), while the theoretical modeling and underlying physics remain missing. Through non-equilibrium molecular dynamics simulations with quantum correction, we predict ITC of both sharp and rough Si/Al interfaces in a good agreement with experimental results in a broad range of temperatures. We further introduce a novel spectral energy exchange analysis, which reveals more annihilation of high-frequency phonons and generation of moderate-frequency phonons around the sharp interface compared to its rough counterpart. However, the low-frequency phonons at rough interface shows unexpected stronger inelastic scattering and larger contribution to ITC due to unique emerging interfacial modes. Our work thus promotes both the methodology and understanding of interfacial thermal transport at solid/solid interfaces, and may benefit the design and optimization of thermal interface materials.
We have proposed the superfluidity of dipolar excitons in a strip of double-layer transition metal dichalcogenides (TMDCs) heterostructures. We have shown that strain causes a shift in k-space between the minimum of the conduction band and the maximum of the valence band. Therefore, we expect that applying strain to this system can cause dark excitons to be created. We have numerically calculated the energy spectrum of dark dipolar excitons in strained MoSe2, and we have calculated their binding energies and effective masses. We have shown that the dark dipolar excitons in strained TMDC heterostructures form superfluids, and we have calculated the sound velocity in the energy spectrum of collective excitations, as well as the mean-field critical temperature for superfluidity. We have shown that two separate superfluid flows moving in opposite directions will appear in the system, one on each edge of the strip, forming the double layer. We have seen that the critical temperature for superfluidity increases with the concentration of dark excitons, as well as with the inter-layer separation. The fact that dark excitons cannot decay by the simple emission of photons, makes it so that the superfluids and condensates formed by them have a much longer lifetime than that formed by bright excitons. We propose a way to experimentally verify the predicted phenomena.
The van der Waals (vdW) antiferromagnet CrSBr has recently garnered significant attention due to its air stability, high magnetic transition temperature, and semiconducting properties. We investigate its nonlinear transport properties and identify a quantum metric dipole-induced nonlinear anomalous Hall effect and nonlinear longitudinal resistivity, which switch sign upon reversing the Néel vector. The significant quantum metric dipole originates from Dirac nodal lines near the conduction band edge within the experimentally achievable doping range. Known the weak interlayer coupling, it is unexpected that the nonlinear conductivities do not scale with sample thickness but are dominantly contributed by surface layers. In the electron-doped region, the top layer dominates the response while the top three layers contribute the most in the hole-doped region. Our results establish topological nodal lines as a guiding principle to design high-performance nonlinear quantum materials and suggest that surface-sensitive transport devices will provide new avenues for nonlinear electronic applications.
We investigate persistent charge and spin currents in an antiferromagnetic (AFM) quantum ring threaded by an Aharonov-Bohm flux, in the presence of a side-coupled one-dimensional non-magnetic (NM) chain. In the absence of the chain, the spin circular current vanishes exactly due to the symmetry between the up and down spin sub-Hamiltonians. Modeling the system within a tight-binding (TB) framework, we compute the currents using a second-quantized approach. Both charge and spin currents can be selectively tuned by adjusting the ring-chain coupling strength. Temperature plays a crucial role in modulating the currents, and interestingly, we find that they increase significantly with rising temperature--contrary to conventional expectations.
We present a low-energy effective theory to describe the localization-delocalization transition, which occurs for wave functions of electrons and holes injected individually by a voltage pulse with noninteger flux quantum. We find that the transition can be described by an effective scattering matrix in a truncated low-energy space, which is composed of two parts. The first part describes the infrared-divergence of the scattering matrix, while the second part represents the high-energy correlation. For short-tailed pulses which decay faster than Lorentzian, the scattering matrix exhibits solely an inverse linear divergence in the infrared limit. The divergence is responsible for the dynamical orthogonality catastrophe, which leads to electron-hole pairs with delocalized wave functions. In contrast, the high-energy correlation can be approximated by a constant term, which leads to electron-hole pairs with localized wave functions. Due to the competition between the two terms, the wave functions can undergo a localization-delocalization transition, which occurs for electrons and holes injected individually by the voltage pulse. As a consequence, the localization-delocalization transitions for all short-tailed pulses can be described by the same effective scattering matrix, suggesting that they belong to the same universality class. For pulses with longer tails, the scattering matrix can exhibit additional infrared-divergences. We show that a Lorentzian pulse gives rise to a logarithmic divergence, while a fractional-powered Lorentzian pulse gives rise to a power-law divergence. The additional divergence can lead to localization-delocalization transitions belonging to different universality classes. These results demonstrate the fine-tuning capabilities of the localization-delocalization transition in time-dependent quantum transport.
Spin textures that are not readily available in the domain structures of continuous magnetic thin films can be stabilized when patterned to micro/nano scales due to the dominant effect of dipolar magnetic interactions. Fabrication of such devices enables a thorough study of their RF dynamics excited by highly concentrated spin-polarized/pure-spin currents. For this purpose, in this study, we have employed a truncated astroid geometry to achieve stable magnetic antivortex core nucleation/annihilation which was detectable using the anisotropic magnetoresistance (AMR) at various temperatures. Furthermore, by depositing a soft magnetic thin film (20 nm thick permalloy) capped with a heavy-metal 2nm Pt layer, we were able to probe the spin orbit torque induced excitations accompanied by self-torque due to half-antivortex cores reminiscent of an isolated-antivortex, yielding GHz frequency oscillations with high quality factors (~50000). The observed RF oscillations can be attributed to a non-uniform domain wall oscillation mode close to the stable-antivortex core nucleation site as seen in micromagnetic simulations. This fundamental study of antivortex core response to spin currents is crucial for the assessment of their potential applications in high frequency spintronic devices such as reservoir computers.
We propose and evaluate the characteristics of the terahertz (THz) detectors based on perforated graphene layers (PGLs). The PGL structures constitute the interdigital in-plane arrays of the graphene microribbons (GMRs) connected by the sets of narrow constrictions, which form the graphene nanoribbon (GNR) bridges. The PGL detector operation is associated with the rectification and hot-carrier bolometric mechanisms. The excitation of plasmonic oscillations in the GMRs can reinforce these mechanisms. The room temperature PGL detector responsivity and detectivity are calculated as function of the radiation frequency and device structure parameters. The effects of the rectification and hot-carrier mechanisms are compared. The PGL THz detectors under consideration can exhibit highly competitive values of responsivity and detectivity.
Isocyanide-metal binding is governed by sigma-donation and pi-back-bonding, which affects the energy of the isocyanide stretching mode-a characteristic probe for ligand-metal interactions. While extensive correlations exist between structure and spectroscopy in molecular isocyanide-metal systems, isocyanide interactions with metallic crystalline surfaces, where ligands often bind in various geometries, remain poorly understood. Conventional vibrational spectroscopies, such as infrared and Raman, lack the molecular-scale resolution needed to distinguish these inhomogeneous configurations. In contrast, inelastic electron tunneling spectroscopy with scanning tunneling microscopy (STM-IETS) enables direct visualization of ligand adsorption geometries and their vibrational signatures. Using STM-IETS, here we investigate a matal-adsorbed m-terphenyl isocyanie ligand and find that adsorption geometry on Cu(100) induces a significant shift in isocyanide stretching frequency, even greater than replacing Cu(100) with Ag(111). Density functional theory confirms this shift arises from atomic-scale variations in isocyanide-metal binding. This study elucidates how atomic-scale binding influences the vibrational signatures of isocyanide ligands-an often-overlooked factor in understanding isocyanide-metal interactions.
Coupling photonic cavity fields to electronic degrees of freedom in 2D materials introduces an additional control knob to the toolbox of solid-state engineering. Here we demonstrate a subtle competition between cavity frequency and interlayer tunneling in graphene stacks that is responsible for topological phase transitions in light-matter Hilbert space and that cannot be captured by mean-field theory in vacuum. A systematic exploration of multilayer graphene heterostructures and stacking configurations in a chiral tHz cavity reveals that linear dispersion enhances the low-energy cavity-induced topological gap. In bilayer graphene, a displacement field drives the low-energy vacuum band from valley-Chern to Chern insulator, comprising a gate-tunable topological phase transition. Furthermore, we show that a chiral cavity breaks not only the time-reversal symmetry of bilayer graphene but also the inversion symmetry, which impacts its edge spectrum. Our findings pave the way for future control and engineering of graphene heterostructures with chiral cavity fields.
On-surface synthesis enables the fabrication of atomically precise graphene nanoribbons (GNRs) with properties defined by their shape and edge topology. While this bottom-up approach provides unmatched control over electronic and structural characteristics, integrating GNRs into functional electronic devices requires their transfer from noble metal growth surfaces to technologically relevant substrates. However, such transfers often induce structural modifications, potentially degrading or eliminating GNRs' desired functionality - a process that remains poorly understood. In this study, we employ low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) to characterize 9-atom-wide armchair GNRs (9-AGNRs) following polymer-free wet-transfer onto epitaxial graphene (EG) and quasi-freestanding epitaxial graphene (QFEG) substrates. Our results reveal that armchair GNRs maintain their structural integrity post-transfer, while GNRs with extended or modified edge topologies exhibit significant structural changes, including partial disintegration. Additionally, STS measurements reveal differences in the Fermi level alignment between GNRs and the graphene substrates, a key factor in optimizing carrier injection efficiency in electronic transport devices. This study establishes a framework for detecting post-processing structural modifications in GNRs, which are often hidden in optical ensemble measurements. By addressing the challenges of substrate transfer and providing new insights into GNR-substrate interactions, these findings pave the way for the reliable integration of atomically precise GNRs into next-generation nanoelectronic and optoelectronic devices.
Chirality-induced spin selectivity (CISS) is a striking quantum phenomenon in which electron transport through chiral molecules leads to spin polarization -- even in the absence of magnetic fields or magnetic components. Although observed in systems such as DNA, helicenes, proteins, and polymers, the fundamental physical origin of CISS remains unresolved. Here, we introduce a time-dependent relativistic four-current framework, in which charge and current densities evolve according to the time-dependent variational principle. Real-time relativistic four-current simulations enable direct analysis of helical currents and induced magnetization dynamics. Applied to helicenes -- axially chiral molecules lacking stereocenters -- our simulations reveal curvature-induced helical electron currents that generate spontaneous magnetic fields aligned along the molecular axis. These fields are handedness-dependent and reach magnitudes of 10−1~Tesla per single helicene strand. Our results suggest that CISS may arise from intrinsic, relativistic curvature-induced helical currents and the associated magnetic fields within chiral molecules. This four-current mechanism offers a self-contained explanation for spin selectivity, independent of interfacial effects or strong spin-orbit coupling. Furthermore, our results lead to several testable hypotheses that can be explored in experiments.
The topological characteristics of energy bands in crystalline systems are encapsulated in the Berry curvature of the bulk Bloch states. In photonic crystal slabs, far-field emission from guided resonances naturally provides a non-invasive way to probe the embedded wavefunctions, raising the question of how the information carried by escaping photons relates to the band topology. We develop a non-Hermitian model to describe the guided and leaky modes of photonic crystal slabs with long-range couplings and non-local responses. Within this framework, radiation Berry curvature is defined from the far-field polarization and compared to the conventional bulk Berry curvature of the crystal Bloch modes. We investigate this bulk-radiation correspondence in the vicinity of the Γ-point of the square lattice and the K-point of the honeycomb lattice. The results show that the comparability between the bulk topology and the radiation topology is not universal; the validity is contingent upon the specific bulk Bloch states. Notably, the correspondence completely breaks down surrounding the far-field singularities, while it can hold in smooth regions under special symmetry conditions, e.g., rotational symmetry. Besides, net Berry curvature concentration is captured at the valleys of the non-local honeycomb lattice, facilitating further exploration on generalized topological phases in photonic lattices beyond the regimes with localized couplings and Hermiticity.
We present an experimental arrangement that permits engineering of cavity back-action on a mesoscopic spin ensemble. By coupling a superconducting thin-film Nb microstrip resonator to a Trityl OX63 electron spin sample, we access different regimes of spin-cavity dynamics by designing the ensemble size, effective coupling strength, cavity temperature, and spin saturation. We performed transient spectroscopy measurements under continuous microwave drive in the strong radiation damping regime. These measurements exhibit a long-lived plateau response that distinguishes important features of spin-cavity models, such as the radiation damping Bloch equations and Maxwell-Bloch equations. We demonstrate control of the plateau response through adjustment of temperature, microwave drive power, and variable spin saturation. The presented experimental arrangement serves as a robust system to explore the space of spin-cavity dynamics and develop new quantum devices that harness the complexity of mesoscopic spin ensembles coherently interacting with high quality factor cavities.
Martensites subjected to quasistatic deformation are known to exhibit power law distributed acoustic emission in a broad range of scales. However, the origin of the observed scaling behavior and the mechanism of self organization towards criticality remains obscure. Here we argue that the power law structure of the fluctuations spectrum can be interpreted as an effect of inertia. The general insight is that inertial dynamics can become a crucial player when the underlying mechanical system is only marginally stable. We first illustrate the possibility of inertia-induced criticality using an elementary example of mass points connected by bi-stable springs. We then explore the effects of inertia in the fully realistic two and three dimensional continuum models of specific elastic phase transitions in crystals.
Topological gapless phases of matter have been a recent interest among theoretical and experimental condensed matter physicists. Fermionic chains with extended nearest neighbor couplings have been observed to show unique topological transition at the multicritical points between distinct gapless phases. In this work, we show that such topological gapless phases and the transition between them can be simulated in a quantum walk. We consider a three-step discrete-time quantum walk and identify various critical or gapless phases and multicriticalities from the topological phase diagram along with their distinguished energy dispersions. We reconstruct the scaling theory based on the curvature function to study transition between gapless phases in the quantum walk. We show the interesting features observed in fermionic chains, such as diverging, sign flipping and swapping properties of curvature function, can be simulated in the quantum walk. Moreover, the renormalization group flow and Wannier state correlation functions also identify transition at the multicritical points between gapless phases. We observe the scaling law and overlapping of critical and fixed point properties at the multicritical points of the fermionic chains can also be observed in the quantum walk. Furthermore, we categorize the topological transitions at various multicritical points using the group velocity of the energy eigenstates. Finally, the topological characters of various gapless phases are captured using winding number which allows one to distinguish various gapless phases and also show the transitions at the multicritical points.
We investigated proximity-induced superconductivity in a graphene-insulating InO bilayer system through gate-controlled transport measurements. Distinct oscillations in the differential conductance are observed across both the electron and hole doping regimes, with oscillation amplitudes increasing as the chemical potential moves away from the Dirac point. These findings are explained using a theoretical model of a normal-superconductor-normal (NSN) junction, which addresses reflection and transmission probabilities at normal incidence. From this model, we extract key parameters for the proximitized graphene, including the superconducting energy gap Delta and the effective length scale Ls of the superconducting regions. Near the Dirac point, we observe a minimal Ls and a maximal Delta, aligning with the theory that the gap in strongly disordered superconductors increases as the coherence length of localized pairs decreases. This suggests that spatial confinement in a low-density superconductor leads to an effective increase in the superconducting gap.
Despite rapid growth in use cases for generative artificial intelligence, its ability to design purpose built crystalline materials remains in a nascent phase. At the moment inverse design is generally accomplished by either constraining the training data set or producing a vast number of samples from a generator network and constraining the output via post-processing. We show that a general adversarial network trained to produce crystal structures from a latent space can be fine tuned through the introduction of advanced graph neural networks as discriminators, including a universal force field, to intrinsically bias the network towards generation of target materials. This is exemplified utilizing two-dimensional topological insulators as a sample target space. While a number of two-dimensional topological insulators have been predicted, the size of the band-gap, a measure of topological protection, remains a concern in most candidate compounds. The resulting generative network is shown to yield novel topological insulators.
Tailoring the optical properties and electronic doping in transition metal dichalcogenides (TMDs) is a central strategy for developing innovative systems with tunable characteristics. In this context, pyroelectric materials, which hold the capacity for charge generation when subjected to temperature changes, offer a promising route for this modulation. This work employs spatially resolved photoluminescence (PL) to explore the impact of pyroelectricity on the electronic doping of monolayer MoS2 deposited on periodically poled LiNbO3 (LN) substrates. The results demonstrate that pyroelectricity in LN modulates the charge carrier density in MoS2 on ferroelectric surfaces acting as doping mechanism without the need for gating electrodes. Furthermore, upon cooling, pyroelectric charges effectively reverse the doping of p-n junctions on DWs, converting them into n-p junctions. These findings highlight the potential of pyroelectric substrates for tunable and configurable charge engineering in transition metal dichalcogenides and suggest their applicability to other combinations of 2D materials and ferroelectric substrates. They also open avenues for alternative device architectures in nanoelectronic or nanophotonic devices including switches, memories or sensors.