2026-05-21 | | Total: 27
Subpicosecond laser excitation of ferromagnetic metals induces strongly nonequilibrium dynamics involving scattering and transport of electrons, phonons, and magnons. Widely used theoretical approaches, such as the three-temperature model and diffusion equations, are ill-suited to capture these processes on ultrafast timescales. Here, we present an ab initio-parameterized microscopic framework that incorporates nonthermal magnon scattering and transport via the quantum Boltzmann equation. We apply this approach to simulate ultrafast laser-induced demagnetization in bcc Fe films. The model predicts an ultrafast spin Seebeck effect, characterized by a strong burst of fast-moving magnonic spin current reaching technologically relevant amplitudes. Furthermore, we identify a superdiffusive transport regime: a crossover from initially ballistic magnon transport to a diffusive regime at later times. To connect our theoretical predictions to experimentally accessible observables, we calculate the magneto-optical Kerr angles resulting from the predicted depth-resolved magnetization profiles. Our framework provides a route to describe ultrafast nonthermal magnon transport beyond diffusive models and will aid in the design and interpretation of time-resolved spin-transport experiments.
Spin-orbit torque (SOT) enables efficient electrical control of magnetization, offering a pathway towards low-power spintronic devices. Magnetic topological insulators (TIs), with spin-momentum-locked surface states and intrinsic ferromagnetism, provide a unique platform for realizing SOT switching of edge current chirality in quantum anomalous Hall (QAH) insulators. In this work, we employ molecular beam epitaxy to synthesize a series of magnetic TI trilayers with controlled layer thicknesses on heat-treated SrTiO3(111) substrates. Electrical transport measurements reveal that SOT-driven magnetization reversal and the associated switching of edge current chirality are governed by the SrTiO3(111) substrate-induced charging effect, which generates an asymmetric chemical-potential alignment between the top and bottom magnetic TI layers. Furthermore, we demonstrate that the switching polarity and efficiency can be tuned through heterostructure design, gate voltage, and in-plane magnetic field, consistent with SOT symmetry. These findings identify chemical potential asymmetry as the origin of the large SOT switching ratio in magnetic TI trilayers and establish a route for electrical control of edge current chirality in QAH insulators. This work advances the understanding of SOT switching mechanism in magnetic topological materials and paves the way for next-generation, energy-efficient QAH-based logic and memory devices.
Magnetic topological insulators (TIs) provide a highly tunable platform for engineering quantum states that emerge from the interplay between topology and magnetism. In this review article, we summarize experimental progress over the past decade in designing magnetic TI multilayers by molecular beam epitaxy (MBE). By treating magnetically doped and undoped TI layers as topological Legos, we discuss how layer thickness, magnetic doping, heterostructure architecture, and stacking sequence can be used to control magnetic exchange gaps, interlayer coupling, and the Chern number C with atomic-layer precision. We first briefly review the realization of the C = 1 quantum anomalous Hall (QAH) effect in uniformly Cr-doped (Bi,Sb)2Te3 films in 2013 and uniformly V-doped (Bi,Sb)2Te3 films in 2015. We then discuss how Cr-doped and undoped (Bi,Sb)2Te3 layers can be combined to realize the C = 1 QAH effect in magnetically modulation-doped trilayers, including its extension into the three-dimensional (3D) regime. Next, we review the development of high-C QAH states, engineered plateau phase transitions, mesoscopic QAH devices, and electrical switching of chiral edge-current chirality. Finally, we discuss the realizations of axion insulator and C = 1/2 parity anomaly states in asymmetric magnetic TI trilayers. These advances establish magnetic TI multilayers as a versatile materials platform for creating new designer quantum states, including synthetic Weyl semimetal and QAH metal phases, and for probing the topological magnetoelectric effect in thick axion insulators and 3D QAH insulators.
Transition metal dichalcogenide (TMD) moiré bilayers have realized a wide range of strongly correlated and topological phenomena. The physics in these materials is often sensitive to the interlayer stacking order. Polarization-resolved optical second harmonic generation (SHG) is the most used technique for stacking order characterization but unverified for most heterobilayers. Here we calibrate the optical SHG for angle-aligned MoTe2/WSe2 bilayers by the scanning transmission electron microscopy (STEM). We directly compare the transport and magnetic properties and the electronic phase diagram for two distinct stacking orders. With the calibrated stacking order assignment, we clarify the interpretation of earlier results, including the nature of the Chern insulator, mechanism of an electric-field-tuned metal-insulator transition at half band filling, and the Kondo lattice physics. Our work provides a consistent picture of the relation between the stacking order and the electronic properties of MoTe2/WSe2 moiré bilayers.
The stacking configuration of two-dimensional materials critically governs their optical and electronic responses. Monolayer transition-metal dichalcogenides (TMDC) lack inversion symmetry and exhibit exciton-enhanced second-harmonic generation (SHG). In TMDC bilayers, 60° (0°) stacking is conventionally expected to suppress (enhance) SHG owing to destructive (constructive) interference of the layer-resolved nonlinear polarizations. Here, we report an unconventional destructive SHG interference in nearly 0°-stacked (AA-stacked) MoTe2/WSe2 heterobilayers using two independent probes: atomic-resolution imaging and stacking-sensitive exciton hybridization measurements. Supported by ab initio GW and Bethe-Salpeter equation calculations, we show that distinct two-photon resonances associated with the WSe2 C exciton and the MoTe2 D exciton generate a nearly $π$ phase difference ($Δφ$) in their second-order nonlinear susceptibilities $χ^{(2)}$, leading to the anomalous destructive interference. We further demonstrate that in small-angle twisted MoTe2/WSe2, the SHG polarization state is governed by the interplay between twist angle $α$ and phase difference $Δφ$, and can be mapped onto trajectories on the Poincaré sphere. At excitation energies satisfying $Δφ$ + 3$α$ = 180°, the SHG output becomes nearly circularly polarized (ellipticity ~ 0.91) and undergoes an abrupt 90° azimuthal rotation, corresponding to a geometric polarization singularity in the parameter space. Our findings open new routes for exciton-resonance engineered nonlinear photonics and stacking-resolved optical functionality in moiré materials.
Valley polarized twisted bilayer dice lattice hosts topologically nontrivial flat bands far from charge neutrality due to broken time reversal symmetry, whereas the ones in the vicinity of it remain topologically trivial. However, when both valleys are taken into consideration, the time reversal symmetry is preserved, which poses a serious hindrance to enumerate the valley specific topological phases that rely on the detection of the Berry curvature. In this work, we demonstrate that such a twisted structure with an applied uniaxial strain exhibits a nonlinear Hall effect far from charge neutrality. We ascertain that the nonlinear anomalous Hall signals can serve as a probe for topological phase transitions associated with a specific energy state that is constrained to reside at the lower edge of the middle subband and controlled via a staggered mass. Specifically, we show that the nonlinear anomalous Hall response undergoes a sign reversal across the topological phase boundaries. By tuning the carrier density, we compute the nonlinear Hall response obtained from the Berry curvature dipole, both in the chiral limit, and also when the chiral symmetry is broken. It is further seen that the nonlinear Hall effect is significantly enhanced in the broken chiral symmetry regime.
In this work, we theoretically investigate the spin-Peltier effect in a heterostructure composed of graphene and a ferromagnetic insulator (FI). Using a microscopic formalism based on the characteristic spin-flip scattering length at the graphene/FI interface, we analyze how spin accumulation in graphene gives rise to a temperature difference across the junction. We show that, in the presence of an external magnetic field, the electronic spectrum of graphene is quantized into Landau levels, which strongly modifies the available spin-flip scattering channels. In particular, crossings between Landau levels significantly enhance the spin-flip scattering amplitude, leading to a pronounced amplification of the spin-Peltier response. Our results suggest that measurements of the spin-induced temperature difference in graphene-FI heterostructures can serve as a sensitive probe of discrete electronic energy levels. More broadly, this work provides a theoretical framework for understanding spin-driven thermal effects in hybrid systems combining Dirac materials and magnetic insulators.
Novel excitonic phenomena emerging in transition metal dichalcogenide (TMDC) heterostructures belong to the most exciting topics in contemporary physics of van der Waals materials. Interlayer excitons (IXs) stand out among those due to their long radiative lifetimes and tunability by electric fields, strain, and twist angle. However, many ambiguities persist in the optical identification and manipulation of IXs, highlighting the need for reliable spectroscopic criteria that distinguish interlayer species from spurious signals. Here, we present a decision-tree protocol that evaluates interlayer coupling via intralayer exciton quenching and correlates photoluminescence (PL) with atomic force microscopy (AFM) to correctly assign room-temperature PL features in TMDC-based heterostructures. Applying this protocol, we identify momentum-direct IX between the K valleys of the two layers (KK-IX) in MoS2-MoSe2 and MoS2-WSe2 heterostructures at room temperature. In contrast, our protocol contests the reported bright, momentum-indirect, twist-angle-independent $Γ$K-IX in MoS2-WSe2. Comprehensive experimental data, including infrared and tip-enhanced photoluminescence (TEPL) with sub-diffraction-limited resolution, show no compelling evidence for this excitonic species, despite numerous reports. Instead, the spectroscopic features previously assigned to this $Γ$K-IX originate from locally strained WSe2 at topographical inhomogeneities of the heterostructure interface, underscoring the need for robust, spatially resolved characterization of real-world samples in this highly accessible field and providing a generally applicable framework for identifying interlayer excitons in 2D semiconductor heterostructures.
We study field-controlled spin-valley transport in monolayer MoS$_2$ through a single electrostatic barrier and a uniform off-resonant elliptically polarized irradiation. Starting from the massive Dirac Hamiltonian with intrinsic spin-orbit coupling, we use a high-frequency Floquet expansion to obtain an effective static model with a laser-renormalized mass (gap) term. We solve the scattering problem by spinor matching and derive the exact analytic expression for the transmission. The numerical results show that the drive tunes both the spin-valley-dependent propagation threshold inside the barrier and the Fabry-Pérot phase, creating controllable pass/stop bands. By varying both the laser intensity (amplitude) and the polarization shape, we show that the same junction can be switched between broadband valley filtering and resonance-selective operation, and the valley contrast remains visible in the Landauer conductance. Our findings establish an efficient route for realizing optically reconfigurable valleytronic and spintronic functionalities in MoS$_2$.
Boltzmann transport theory, the standard framework for predicting thermal conductivity, assumes that every vibrational mode eventually scatters, acquiring a finite lifetime that yields a convergent, length-independent thermal conductivity: Fourier's law. Here we show that this assumption fails in a real molecular system. Through atomistic simulations of Au-alkane-Au single-molecule junctions spanning five orders of magnitude in length (0.5~nm to 4~$μ$m), we find that thermal conductivity never converges. Transport is ballistic for up to one hundred nanometers at room temperature, extending nearly two orders of magnitude beyond existing single-molecule measurements. Past this window, conductivity diverges as $L^{1/3}$, the scaling predicted by the Kardar-Parisi-Zhang universality class for momentum-conserving systems. Frequency-resolved decomposition of the heat current reveals the mechanism behind the divergence. Low-frequency acoustic modes never thermalize: protected by momentum conservation, they remain ballistic at every chain length, still carrying 50\% of the total heat current at $L = 2~μ$m. All other modes thermalize collectively as discrete vibrational states merge into scattering-active phonon bands with increasing length. Hence, the diverging conductivity emerges from the boundary between these coexisting transport regimes: as $L$ grows, the onset of scattering shifts progressively toward lower frequencies, suppressing the ballistic channel at a rate that sustains the $L^{1/3}$ divergence, leaving a finite contribution at every length. This coexistence of permanent ballistic and well-behaved diffusive transport, anticipated in abstract one-dimensional lattice models, survives the structural and chemical complexity of real micrometer-sized junctions.
Understanding and controlling hot-carrier relaxation in graphene is crucial for advancing ultrafast optoelectronic and terahertz technologies. Here, we investigate carrier cooling dynamics in monolayer and bilayer graphene using mid-infrared pump pulses (0.22-0.73 eV) and terahertz probe pulses. We uncover a pronounced, reproducible, and non-monotonic dependence of the carrier relaxation time on excitation photon energy. Remarkably, within a narrow spectral window (0.42 to 0.48 eV), the carrier lifetime increases by an order of magnitude compared to a few picosecond-scale cooling observed at other energies. We show that this anomalous slowdown originates from a resonant enhancement of the optical-phonon lifetime, causing accumulation and reabsorption of hot optical phonons that suppress energy transfer to the lattice. All observed behaviors are captured within a unified carrier-phonon energy-balance framework, where excitation-energy-dependent variations of the effective optical-phonon decay pathway govern the cooling dynamics. These findings demonstrate excitation-energy-selective control of hot-carrier relaxation in graphene and provide new insight into non-equilibrium carrier-phonon interactions near the optical-phonon bottleneck.
Exciton-phonon interactions play a central role in defining the optical response of hexagonal boron nitride (hBN), yet their quantitative determination has remained incomplete. Here, we reveal the Fröhlich-type exciton-phonon coupling in boron-10-enriched hBN using low-temperature cathodoluminescence. We resolve the indirect exciton 5.95$\pm$0.02 eV together with its longitudinal optical (LO) phonon replica detuned by 184$\pm$56 meV, enabling the extraction of a Fröhlich coupling constant $α$=0.159 and a larger exciton binding energy of 161 meV, larger than previously reported values for natural-abundance hBN, which is attributed to isotope enrichment. The inferred polaron radius exceeds the lattice constant, indicating large-polaron behavior. We deduced an exciton scattering time ~of 97 fs, corresponding to a homogeneous linewidth of ~6.76 meV. We further obtain a polaron binding energy of ~48 meV and an effective mass of 1.045 $m_0$. These results provide a direct quantitative characterization of exciton-phonon coupling in isotopically engineered hBN and establish a foundation for tailoring its phonon-polaritonic and quantum-optical properties.
Nanomaterials stacked on-demand, such as rotationally assembled two-dimensional (2D) van der Waals (vdW) layered compounds, provides a versatile platform for quantum simulation and the exploration of exotic electronic phases. Currently, however, such nanoassemblies remain largely confined to inefficiency, manually operated process, limiting their potential for probing emergent physical phenomena. There is a pressing need in the field for high-precision, automated assembling techniques, especially for the scalable fabrication of 2D twistronic heterostructures. Here, we present an intelligent automation system dedicated to the fabrication of van der Waals stacks, following the state-of-the-art protocol for dry transfer of exfoliated 2D materials. The system further employs metadata generated from each automated stacking procedure to perform reinforcement learning, thereby continuously bettering its performances. As a concrete demonstration, we fabricate twisted bilayer graphene (TBLG) -- known for its challenging preparation -- and exhibit its unconventional superconductivity near the magic angle. Our work may pave the way for high-throughput fabrication of low-dimensional nanomaterials including twistronic heterostructures, where integrating data mining and artificial intelligence can accelerate the discovery of novel physical phenomena.
Quasiperiodic systems are an intermediate class of systems between periodic crystals and disordered systems, famously exhibiting metal-insulator transitions (MITs) even in one dimension. While their transport properties have been studied extensively, a systematic analysis of the finite-frequency optical conductivity near the critical point has been lacking. In this work, we carry out a detailed study of the optical conductivity in the paradigmatic Aubry-André model. We find that the zero-temperature low-frequency optical signal is strongly restructured by the quasiperiodic potential, exhibiting an optical gap that closes discontinuously as the system approaches the MIT. Most strikingly, we uncover a mechanism for a strong enhancement of the low-frequency finite temperature optical conductivity at certain resonant frequencies. This enhancement stems from the thermal activation of Pauli-blocked transitions between strongly resonant van Hove singularities. This mechanism provides new insight into finite-frequency transport in quasiperiodic systems and a new pathway for manipulating optical properties near a localization transition. Furthermore, our findings establish the optical response as a powerful, experimentally accessible tool for probing non-trivial quasiperiodicity effects.
Polar topological textures in ferroelectrics can host internal structure beyond a single integer topological charge. Here, effective-Hamiltonian molecular-dynamics simulations are used to examine whether such internal fractional topology can be reconfigured by local electric excitation in ordered 12.5% Zr-substituted barium titanate. Chemical doubling along the polar axis stabilizes a coupled nanodomain texture consisting of alternating Q = -2 antiskyrmionic and Q = +4 skyrmionic slices, in which the local topological charge fragments into six -1/3 and six +2/3 localized contributions, denoted here as topological quarks, separated by Bloch-point-like singular conversion regions. Picosecond local electric-field pulses applied to selected vortex-core columns drive reconfiguration of the internal dipolar texture of a 2.6 nm nanodomain. Under a binary pulse-mask protocol addressing the six vortex cores, all 64 masks lead, within the chosen low-temperature simulation protocol, to distinct relaxed metastable configurations. The switching calculations are performed in a cryogenic regime, and the programmed states remain stable over at least 1 ns of field-free evolution on the simulation timescale. The resulting configurations are distinguishable both by sector-resolved topological fingerprints and by their real-space polarization fields. These results provide a computational proof of concept that fractional polar topology in a ferroelectric nanodomain can be locally reconfigured by ultrafast electric excitation and used as a multistate configurational degree of freedom in an idealized low-temperature setting.
Light scattering by two-dimensional (2D) van der Waals heterostructures (vdWHs) is immense, especially given their infinitesimal volume, thus enabling strong light-matter interactions. Surface 2D polariton waves manifest through large concentration of electromagnetic field in vertical direction, normal to their propagation. By confining vdWH materials into 2D photonic shapes, one can manipulate and compress light in lateral directions. Scattering-type scanning near-field optical microscopy is a perfect tool for direct imaging of the propagating polaritons and studying the properties of confined polaritons in nanostructures. Though, thus far the quantitative analysis, such the wavelength extraction, has been challenged for confined polaritons by incapability of mapping of the wave period on sub-wavelength scale and difficulty of identifying an adequate substrate's "background" to subtract. Here, an analytical approach is developed to reveal the local propagation constant of confined polaritons under abovementioned constraints and map it with the sub-wavelength resolution. Applied to analysis of the SiC/2D-Ag/EG (epitaxial graphene) photonic nanostructures, the technique uncovered that the polaritons are highly confined in both vertical ($\simλ$/50) and lateral directions ($\simλ$/40) by 2D metal.
Time-periodic light fields can dress electronic states in quantum materials, forming Floquet states whose dynamic occupation determines transient material properties. Here by using time- and angle-resolved photoemission spectroscopy (TrARPES), we reveal the transient occupation of Floquet-Volkov states in two semiconductors, black phosphorus and MoSe$_2$. While the occupation of the light-induced sidebands, directly reflected by TrARPES spectral weight, strongly depends on the driving field, we find that the total spectral weight obtained by summing up all sidebands is conserved upon below-gap driving. Our work provides critical insights into the Floquet population dynamics, which are essential for light-field tailoring of transient material properties.
We use shear-mode Raman imaging to track ferroelectric switching in multilayer 3$R$-MoS$_2$. Within a single flake, mechanically segmented regions respond independently and follow distinct pathways. Partially polarized end states indicate that domain walls can reside between selected layer pairs, producing partial stacking transformations. The dwell time of intermediate states varies widely, indicating that pinning sites strongly influence the dynamics. Second-harmonic generation measurements further reveal three characteristic sample-boundary and domain-wall orientations, including a prevalent chiral direction near the zigzag-armchair bisector. These results provide a direct, noninvasive view of domain-wall-mediated switching in a prototypical sliding ferroelectric and identify pinning and exfoliation-created boundaries as key factors governing its dynamics.
We characterize spin-polarized lasing in a two-dimensional photonic lattice fabricated from a GaAs/InGaAs semiconductor microcavity sample. The lattice is defined by a staggered arrangement of rounded rectangular micrometric mesas that laterally confine and couple the optical modes. Polarization-, angle-, and energy-resolved micro-photoluminescence measurements reveal the transition from the strong-coupling regime to photon lasing, accompanied by extended spatial coherence across several lattice unit cells. Under circularly polarized nonresonant excitation, the emitted light acquires a controllable circular polarization whose handedness follows that of the pump. These results establish photonic-lattice VCSELs as a platform for spin-controlled coherent emission in extended optical systems.
Silicon photonic integrated circuits critically depend on compact on-chip light sources, for which nanowire (NW) lasers are an attractive solution. However, their practical implementation is often limited by broad emission linewidths and poor frequency stability resulting from weak optical feedback. Here, we integrate individual GaAsSb NWs by transfer-printing onto silicon-on-insulator (SOI) racetrack resonators to realize optical feedback at silicon-transparent wavelengths. Finite-difference-time-domain simulations reveal efficient coupling between the hybrid NW-waveguide mode and the fundamental TE resonator mode, with calculated cavity Q-factors exceeding 10$^4$. Experimentally, we observe feedback-induced lasing emission at a low threshold (P$_{th}$) of 8.6 $\pm$ 1.8 $μ$J/cm$^2$. Compared to identical NW lasers without SOI resonator, the linewidth is reduced by more than a factor of four at 3P$_{th}$ and remains stable below 1.8 meV up to 5P$_{th}$. Our results demonstrate NW-based light sources on SOI and show that tailored resonator designs enable improved linewidth control and frequency stabilization.
Spin qubits in silicon-MOS (SiMOS) quantum dots have recently demonstrated compatibility with existing industry standard CMOS fabrication techniques. These devices have routinely achieved single- and two-qubit gate fidelities above 99% and demonstrated highly entangled two-qubit Bell states in isolated double quantum dot (DQD) unit cells, however coupling between unit cells has remained challenging. In this work, we present a two unit cell, four-qubit SiMOS processor with universal controllability and fully parallelised state initialisation and readout. We use this processor to generate maximally entangled three-qubit states, including the Greenberger-Horne-Zeilinger (GHZ) state, and certify multipartite entanglement through violation of the classical Mermin-witness bound. By using a fully symmetric dynamically decoupled gate sequence to create our entangled states, we are able to preserve the lifetime of the entanglement beyond $T_2^*$, to a time limited instead by $T_2^\textrm{Hahn}$. These demonstrations pave a road to the scalable operation of larger SiMOS processors, and achieving high purity, long-lived multi-qubit entangled states in them.
Despite a surge of interest in the nonlinear transport in 2D materials, a fundamental puzzle remains: existing theoretical frameworks are unable to quantitatively account for the giant nonlinear conductivities ($\gtrsim 1 \frac{μ\text{m}}{Ω\text{V}}$) recently reported in 2D van der Waals heterostructures. Here, we introduce a mechanism based on electron scattering from a substrate-induced periodic dipole array. We show that the strict kinematic constraints, inherent to 2D scattering, lead to a singular enhancement of the nonlinear response, fundamentally dictating a natural scale of $1 \frac{μ\text{m}}{Ω\text{V}}$.
Tuning the electronic structures of two-dimensional (2D) material-based heterostructures is of crucial importance for their use in functional next-generation electronics. Here, through angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nano-ARPES), we systematically track the evolution of the near-Fermi-level electronic structure of bilayer WSe2 over a large range of twist angle. While the momentum positioning of the valence band maxima is independent of twist angle, we find that the energetic separation between the hole bands at the K point of the Brillouin zone and the higher binding-energy hole band at Γ can be varied in excess of 100 meV. We explore the mechanisms underpinning this evolution and discuss the implications for tuning both the size of the band gaps, and the efficiency of the spin-dependent electron-phonon coupling channels in homobilayer transition metal dichalcogenide devices.
The coherent lattice vibrations significantly impact physical and chemical processes in solids, such as heat transfer, displacive phase transitions, and thermal conductivity. Thus, probing lattice dynamics in real-space and real-time is essential for understanding ubiquitous phenomena in solids. High-harmonic spectroscopy (HHS) has emerged as a preferred technique for investigating static and dynamic properties of solids on ultrafast timescales. Yet, despite these accomplishments, the applicability of HHS to probe the influence of coherent lattice vibrations on electronic responses has remained unexplored. In this thesis, we explore the impact of coherent lattice dynamics on attosecond electronic responses in solids using HHS. We observe that coherent excitation of the in-plane phonon mode in graphene results in sidebands in the harmonic spectrum, separated by the frequency of the excited phonon mode. Additionally, we demonstrate the capability of HHS to characterize energy, polarization, phase difference, and the "chirality" of phonon modes. This thesis offers an avenue to probe phonon-driven processes in solids with sub-cycle temporal resolution. In the later segment, our focus shifts toward probing coherent lattice dynamics in real-space and real-time. We demonstrate that inelastic scattering techniques, combined with theoretical analysis, yield comparable results to those from time-resolved diffraction and imaging measurements within pump-probe configurations. Our findings exhibit excellent agreement with results from a time-resolved diffuse x-ray scattering experiment. Our proposed method serves as an alternative to time-resolved diffraction and imaging methods for probing lattice dynamics in real-space and real-time with atomic-scale spatiotemporal resolution.
Holographic superfluids/superconductors are one of the most studied systems in the AdS/CFT duality. In the low-energy, in the long-wavelength limit, they should be described by a Ginzburg-Landau theory. For critical dynamics, one expects that they belong to "model F" universality class. We consider a bulk 5-dimensional holographic superfluid/superconductor in the probe limit. For the holographic superconductor, we impose the boundary Maxwell equation to make the boundary Maxwell field dynamical. We identify the dual model F equations where numerical coefficients are obtained exactly.