2026-08-20 | | Total: 35
Complex concentrated alloys (CCAs), including high- and medium-entropy alloys, deform in chemically heterogeneous energy landscapes where dislocation glide, solute aging, twinning, phase transformation and microstructural barriers may all contribute. This review discusses avalanche-like and serrated plasticity in CCAs across scales. The first part separates the relevant length scales and methods used to access them. At microscopic and mesoscopic scales, acoustic emission (AE) and microcompression studies reveal discrete dislocation avalanches and strain bursts that may be hidden in conventional macroscopic curves. At the specimen scale, local extensometry and digital image correlation (DIC) studies of the Portevin-Le Chatelier effect show how collective defect dynamics can organize into deformation bands and macroscopic stress serrations. Together, these approaches show that plastic flow may appear smooth only as an average response, while remaining intermittent at finer scales. The second part reviews direct CCA evidence, with emphasis on AE, stress-serration statistics, microplasticity, DIC, nanoindentation and small-scale deformation. A central conclusion is that serrated flow in CCAs should not be treated as a single phenomenon. Depending on chemistry, temperature, strain rate and microstructure, it may originate from dynamic strain aging, twinning, martensitic transformation, slip localization, or a combination of these mechanisms. Reported power-law-like distributions and exponents partly overlap with those known from simpler crystals and alloys, and the present evidence does not establish a distinct CCA-specific universality class. CCAs are therefore best viewed as tunable systems in which chemical disorder, short range order, phase stability and microstructure can modify the nucleation, arrest and synchronization of collective plastic events.
Many problems in disordered materials require sampling beyond fixed composition and volume, where coupled changes in atomic identities and structure create a prohibitively expensive discrete-continuous sampling problem. Here we introduce JANUS, a multimodal neural sampler that couples continuous and masked discrete diffusion through an equivariant graph neural network trained directly from energy evaluations, without pre-generated equilibrium data. In benchmark Ising and isobaric $ΔμNPT$ alloy systems, JANUS reproduces reference Monte Carlo equilibrium observables and recovers free energies and phase behavior with more than three orders of magnitude fewer energy evaluations. In multicomponent alloys, JANUS enables conditional steering toward prescribed chemical short-range order and enhanced bulk modulus and, when coupled to a large language model evolutionary agent, performs efficient inverse design for balanced optical and mechanical properties. In semiconductors like silicon and diamond, JANUS explores vacancies and dopants spanning 15 elements in grand-canonical $μVT$ ensembles, recovers established defects including the silicon $E$ centre, and identifies new candidate defect pairs and triplets for quantum engineering, including S-Ti in silicon and B-O-O in diamond, with deep in-gap states validated by hybrid-functional density functional theory. By unifying discrete site identities with continuous structural and volumetric relaxation, JANUS provides a foundation for thermodynamic sampling, characterization and inverse design of chemically disordered materials.
Resolving and controlling the local dynamical properties of covalent organic frameworks (COFs) remains a central challenge, particularly when assembled from large, flexible building units. Here, we combine synchrotron X-ray pair distribution function (PDF) analyses with machine learning-accelerated molecular dynamics (MD) simulations to resolve the local structure and dynamics of two three-dimensional imine-linked COFs, COF-682 {[(DHP)(TAM)]$_{imine}$}, assembled from 6,13-dihydropentacene (DHP) and tetrakis(4-aminophenyl)methane (TAM), and COF-612 {[(HBC-LA$_{12}$)(HAPT)$_2$]$_{imine}$}, assembled from nanographene dodecabenzaldehyde hexakis{[3,5-bis($p$-formylphenyl)-4,6-dimethoxyphenyl]}hexabenzocoronene (HBC-LA$_{12}$) and 2,3,6,7,14,15-hexa(4-aminophenyl)triptycene (HAPT). Validated against the experimental PDFs through ensemble-averaged calculations, the simulations show that the exposed $π$-surface and V-shaped geometry of the DHP linker endow COF-682 with enhanced local flexibility through face-to-face and offset $π$-stacking interactions differing in both their average interplanar separation and their ring-plane tilt angle. In contrast, the extended nanographene linker rigidifies COF-612 by maintaining the planarity of its fused cores, while the linker pendant aryl rings equip both COFs with enhanced librational ability. The simulations further provide quantitative measures of the translational and reorientational mobility of the linkers, revealing how local COF dynamics may be tuned by balancing non-covalent interactions and different degrees of aromatic rigidity. The PDF-MD experimental-computational approach holds promise as a general method beyond conventional crystallography to gain insights into the local properties of COFs with the aim of directing their dynamic function.
Anti-altermagnets exhibit odd-parity nonrelativistic spin splitting, yet unlike even-parity altermagnets, their momentum-space symmetries lack a reduced classification analogous to spin Laue groups. Here, we introduce anti-spin Laue groups, organized into three distinct classes, and identify 21 groups describing the odd-parity partial wave character of this unconventional class. Together with the 10 spin Laue groups of altermagnets, they complete the classification of nonrelativistic unconventional magnets with collinear momentum-space spin polarization. Anti-spin Laue groups also provide a many-to-one reduction of spin space (point) groups by retaining only their action on the collinear momentum-space spin polarization, thereby directly encoding the symmetry-enforced nodal spin-splitting character. Based on this we develop a systematic model-construction algorithm yielding minimal, material-oriented four-band models. This framework places odd- and even-parity unconventional magnets on equal footing within a unified momentum-space symmetry description.
Predicting charge transport in strongly anharmonic materials, particularly ultralow thermal conductors, remains a major challenge for first-principles methods. In such systems, perturbative treatments of electron-phonon interactions and the harmonic phonon picture often break down, necessitating non-perturbative approaches. The ab initio Kubo-Greenwood(aiKG) formalism provides a rigorous framework for evaluating temperature-dependent carrier transport beyond the harmonic approximation. Nevertheless, its practical application is computationally demanding because it requires large supercells, extensive statistical sampling, and extrapolation to the zero-frequency limit. In this work, we introduce an artificial-intelligence(AI)-assisted aiKG framework that incorporates the deep-learning Hamiltonian model. By predicting the Kohn-Sham Hamiltonian with sub-meV accuracy for supercells of up to 250 atoms, the model bypasses the costly iterative self-consistent field calculations while retaining first-principles reliability within the scope of effects captured by the training data. Using a strongly anharmonic thermal insulator, potassium iodide(KI) as a benchmark system, we demonstrate that the proposed approach enables efficient simulations of electronic structure and transport properties from a large supercell. The framework reproduces temperature-dependent carrier mobilities, spectral functions, and effective masses in close agreement with the underlying density functional theory while reducing computational cost to 10%. These results suggest that the AI-assisted aiKG framework can make non-perturbative transport calculations tractable for strongly anharmonic materials, opening a scalable route towards realistic simulations and accelerated discovery of new functional materials.
Weak particle-matrix interfaces play a critical role in the tensile fracture of particle-filled polymer composites, but how they govern progressive debonding, fracture localization, and the resulting changes in macroscopic mechanical properties remains insufficiently understood. In this study, a cohesive-zone phase-field model incorporating a hyperelastic polymer matrix and a smeared interface is employed to investigate the coupled evolution of interfacial debonding and matrix fracture in particle-filled polymer composites. The model is calibrated against and compared with uniaxial tensile responses of particle-filled polyurethane composites and then used to study how interfacial strength, interfacial fracture energy, and matrix fracture properties affect the macroscopic stress-strain response and damage evolution. The results show that weak interfaces can induce an intermediate softening regime in the stress-strain response, characterized by a reduced effective tangent stiffness and associated with distributed interfacial damage. Interfacial strength mainly controls the initiation of debonding, whereas interfacial fracture energy affects whether debonding can develop progressively in a distributed manner or rapidly localizes into a dominant crack band. Comparisons with well-bonded reference systems further demonstrate that weak interfaces may reduce the maximum stress but increase the strain at break by promoting distributed debonding around particles and delaying the formation of a dominant crack band. These findings clarify the dual role of weak interfaces and provide a mechanistic understanding of interface-controlled tensile failure in particle-filled polymer composites.
Ultrafast pump-probe spectroscopies in energy and momentum have become indispensable for probing non-equilibrium dynamics in quantum materials, revealing pathways in ultrafast energy conversion and light-induced phase transitions. Different modalities uniquely access the coupled lattice, charge, and spin degrees of freedom that underpin the functionality of these materials. However, investigating technologically relevant nanoscale devices also requires high spatial resolution. Although electron microscopy provides nanometer-scale imaging, it frequently lacks the simultaneous ultrafast temporal resolution and spectroscopic specificity needed for such studies. In this perspective, we review recent advances in dark-field electron and photoelectron microscopy, focusing on two complementary techniques: femtosecond photoelectron momentum microscopy and ultrafast transmission electron microscopy. Their application enables comprehensive insights into the ultrafast dynamics of the electron, lattice, and spin subsystems. These order-selective electron imaging and spectroscopy techniques open broad scientific opportunities for a microscopic understanding of non-equilibrium phenomena in quantum materials, nanostructures and devices.
Controlling magnetic phases and accurately determining their transition temperatures are essential for the development of low-dimensional magnetic materials. Here, we demonstrate that He$^+$ ion irradiation provides a versatile route for engineering magnetic phases in layered CrSBr and establish temperature-dependent polarization-resolved Raman spectroscopy as a sensitive optical probe for identifying irradiation-induced magnetic phase transitions. We reveal that the magnetic response of the modified CrSBr is governed by both irradiation dose and crystal thickness. The temperature evolution of the Raman tensor elements resolves the antiferromagnetic transition in pristine CrSBr at T$_N \approx 132$ K as well as irradiation-induced magnetic transitions at T$_C \approx 105-110$ K and T$_D \approx 40$ K corresponding to ferromagnetic and defect-related magnetic phase transitions. Complementary magneto-optical measurements confirm the progressive suppression of antiferromagnetic order and the emergence of new defect-engineered magnetic phases, including pure ferromagnetic behavior at high irradiation doses. These findings establish irradiated CrSBr as a platform for controllable magnetic phase engineering while demonstrating polarization-resolved Raman spectroscopy as a rapid, non-destructive, and broadly applicable method for probing magnetic phase transitions in van der Waals magnets.
Lithium niobate and lithium tantalate see widespread use in optics and electronics, and are increasingly used for cryogenic applications. Despite their broad deployment, their optical band gap and its relation to the crystal stoichiometry are not well characterised as a function of temperature. In this work, we study the optical absorption properties of congruent, stoichiometric, MgO-doped and Er-doped lithium niobate as well as congruent lithium tantalate across the temperature range between 7~K and 1000~K by means of optical transmission spectroscopy. Our results demonstrate that the difference of the optical band gap typically observed at room temperature between different stoichiometries is not primarily attributable to the intrinsic electronic structure, but rather to different electron-phonon couplings and the average phonon energies. Additionally, we exemplarily study the temperature shift of the 523 nm absorption line in Er-doped lithium niobate due to the increased interest in optically active dopants. To facilitate future analyses, we present the open-source software suite PhoQS-Treat (Tauc Regression Edge Analysis Tool), which enables automated Tauc regressions alongside additional analytical capabilities. This work advances the development of high-performance lithium niobate-based devices.
Density functional theory is known to underestimate band gaps in semiconductors and to over- estimate inverted band gaps, frequently exaggerating the predicted size of the topological phase diagram of materials. Employing hybrid functionals and calculating the topological invariants, we revisit the topological properties of compounds crystallizing in the CaAl2Si2-type and demonstrate that the overestimation of the inverted band gaps is particularly pronounced in compounds with this crystal structure. Among these, the class of XMg2Bi2 materials (X = Ca, Sr, Ba, Yb, and Eu) is topologically trivial for all considered cations. Our calculations show that these materi- als are narrow-gap semiconductors with direct band gaps of 0.24-0.34 eV, slightly decreasing with increasing the atomic weight of the element X. We confirm this by applying uniaxial strain and hydrostatic pressure, confirming these results. We emphasize that the experimental observation of surface states alone is insufficient to establish nontrivial topology, as trivial semiconductors may host surface states without a surface Dirac point. Consequently, since these materials are intrinsi- cally topologically trivial, any experimentally observed topological signatures should be attributed to extrinsic effects such as doping or surface reconstruction. Our results underscore the importance of accurately treating electronic correlations when assessing topological character, even in materials containing heavy elements with strong spin-orbit coupling, such as bismuth.
Chiral topological semimetals provide a natural platform for exploring how multifold band topology and quantum geometry manifest in optical and photovoltaic responses. BeAu is a chiral multifold semimetal hosting band crossings at $Γ$, $M$, and $R$ with Chern numbers $C_Γ=-4$, $C_M=-2$, and $C_R=+4$, respectively. In this work, we study the linear optical conductivity and second-order dc photocurrent responses of BeAu using fully relativistic first-principles calculations. The calculated interband linear optical conductivity, Re $σ_{xx}(ω)$, is quantitatively reproduced by $(e^2/\hbar)ωg_{xx}(ω)$, showing that its spectral features are governed by the photon energy factor and the variation of the photon energy-resolved quantum-metric spectral weight. The linear shift current conductivity is closely related to the symplectic connection, whereas the circular injection current susceptibility is governed by the transition-resolved product of Berry curvature and the interband group velocity difference. At the Fermi level, the linear shift current conductivity reaches approximately -810 $μ$A/V$^2$ at a photon energy of 0.05 eV. Aligning the chemical potential with the multifold crossings strongly reshapes both responses, producing the largest linear shift current conductivity peak for $μ=μ_R$ and pronounced changes in the magnitude and sign of the circular injection current susceptibility. The circular photogalvanic trace is strongly photon-energy and chemical-potential dependent and does not exhibit a broad quantized plateau, indicating competing multiband transitions. Our results establish a unified quantum-geometric description of the linear and nonlinear optical responses of BeAu and identify it as a promising platform for optoelectronic phenomena governed by multifold band topology and quantum geometry.
Machine-learned models are replacing first-principles calculations across materials discovery, and physical symmetry is the central guarantee built into them. The debate over how much symmetry to hard-wire rather than learn has run on rotations, where a symmetry error is an approximation error. Some constraints are exact: symmetry forces certain property tensors to exactly zero, so a nonzero prediction is physically impossible rather than inaccurate. Here we show that whether a model can make such predictions is decided before training by one rarely reported design bit, whether its features carry parity labels, and derive a criterion, the parity gap, that computes from group theory alone which properties and crystals are exposed. Across matched architecture pairs differing only in that bit, evaluated on two thousand centrosymmetric crystals whose piezoelectric tensor must vanish, parity-labelled arms sit at the floating-point floor while rotation-only arms predict forbidden responses on 90-96% of crystals, six orders of magnitude apart, at no accuracy cost. Training on explicit zeros does not recover exactness, and a head on a frozen universal potential inherits its backbone's symmetry group. One reflection at random initialization verifies the label in seconds.
We investigate degradation pathways and surface protection strategies for epitaxial 2H-MoTe2 films grown by molecular beam epitaxy on GaAs(111)B substrates. Using X-ray photoelectron spectroscopy, scanning tunneling microscopy, atomic force microscopy (AFM), Kelvin probe microscopy (KPM), Raman spectroscopy, and density functional theory (DFT) calculations, we analyse the structural, chemical, and electronic evolution of MoTe2 films protected by Co and Ni capping layers. XPS shows that the metallic caps effectively suppress oxidation during short-term air transfer, while the films exhibit a pronounced Te-rich near-surface composition. However, the caps become increasingly difficult to remove with exposure time, suggesting the gradual development of interfacial bonding, likely promoted by excess tellurium and defect-rich MoTe2 interfaces. AFM and KPM reveal strong thickness-dependent changes with time (ageing), with ultrathin regions showing markedly different contact-potential evolution from thicker films. DFT calculations for pristine and oxidized MoTe2 based structures qualitatively support the sensitivity of the work function and density of states to thickness and surface chemistry. Raman measurements performed through approximately 20 nm thick metallic caps demonstrate that such layers can provide partial optical access to the protected material. Additional AFM and Raman observations suggest that Te-rich nanostructures may form locally under laser illumination or near edges of the sample and mechanically formed chips. These results establish practical guidelines for the short-term protection, transfer, delamination, and optical characterization of air-sensitive MoTe2 and related van der Waals materials.
Antiferromagnets hold appealing potential in next-generation spintronic devices with higher frequency and scalability, thanks to their alternating spin orientations that cancel out net magnetization. However, the lack of a nonzero magnetization makes the detection of the magnetic configuration of antiferromagnet difficult, hampering the applications of antiferromagnets. Here, we report a new transverse transport effect in noncoplanar antiferromagnet $\text{MnTe}_{2}$. This effect is antisymmetric in both magnetic field and Néel order, but symmetric in its two indices. It can be understood in terms of the contribution induced by both magnetic field and geometric quantities, as confirmed by our theoretical calculations. Our discovery of a new Néel-order-dependent transverse transport effect provides opportunities to the advancing antiferromagnetic spintronics.
Atomistic spin dynamics (ASD) codes like VAMPIRE simulate femtosecond-laser-induced ultrafast demagnetization and all-optical switching (AOS) on a rigid lattice; the SPIN package of the Large-scale Atomic/Molecular Massively Parallel Simulator (LAMMPS) instead propagates spins and lattice together, but until now could couple its spin thermostat only to a single global temperature, precluding three-temperature (3TM) simulations. We present a validated 3TM extension with two new fixes: langevin/spin/ttm, coupling the stochastic spin bath to the local electron-temperature field of fix ttm; and moment/scale/spin, supplying the per-atom moment-dependent ($1/μ_i$) prefactor required for heterogeneous-moment systems, with deterministic terms scaling as $1/μ_i$ and, as required by the fluctuation-dissipation theorem, stochastic noise scaling as $1/\sqrt{μ_i}$. We validate the framework on single-species benchmarks-precession, the bcc-Fe Curie curve, a continuous demagnetization-remagnetization-precession trajectory, and a lattice-strain acoustic-phonon pulse unavailable to spin-only ASD codes-then on heat-induced AOS of GdFeCo with literature parameters (Radu/Ostler exchange constants, moments, and damping). The corrected integrator reproduces the experimentally reported transient ferromagnetic-like sublattice alignment, field-insensitive thermal switching, a switching probability approaching unity across a genuine 8x8 literature damping phase diagram, a non-monotonic critical-cooling-duration boundary that disappears above $T_e^0 \approx 2000 \text{ K}$, a composition-dependent switching window centered on angular-momentum compensation, and convergence in system size with monotonic, physical damping dependence. These results establish LAMMPS as a quantitatively validated platform for three-temperature spin-lattice simulations of ultrafast magnetism.
Electron phonon coupling governs charge transport, carrier relaxation, and polaron formation in halide perovskites, yet its microscopic origin in low dimensional systems remains poorly understood. Here, we combine operando, bias dependent Raman spectroscopy with density functional theory (DFT) calculations to directly probe carrier lattice interactions in two-dimensional Ruddlesden Popper perovskites,(PEA)$_2$PbI$_4$ and its fluorinated analogue, (PEA-F)$_2$PbI$_4$. Under applied electric fields, both systems exhibit mode-selective Raman linewidth broadening predominantly near 100 cm$^{-1}$, whereas other phonon modes remain largely unaffected, revealing highly selective coupling between injected carriers and specific lattice vibrations. DFT calculations identify these modes as hybrid organic inorganic vibrations involving coupled motion of the organic spacer and symmetric Pb I equatorial stretching, rather than purely inorganic phonons. Fluorination fundamentally reconstructs the vibrational landscape by modifying molecular packing, crystal symmetry, and organic inorganic coupling, resulting in changes to the phonon density of states, longer phonon lifetimes, and an enhanced carrier mediated lattice response. Notably, electrical bias produces opposite phonon lifetime evolution in thin films and single crystals: the phonon lifetime decreases by approximately 17 to 22% in thin films but increases 20 to 26% in single crystals. These contrasting responses demonstrate that structural order plays a fundamental role in determining carrier phonon interactions and phonon relaxation pathways in two-dimensional halide perovskites.
Quantum geometry, describing the inherent geometric structure of electron wavefunctions in momentum space, transcends the traditional charge degree of freedom and provides a novel physical basis for information encoding and processing. The key to such new computing paradigms is the non-volatile electrical programming of quantum geometric states at room temperature, which, however, has not been established. Here, we demonstrate ferroelectrically switchable quantum geometry in few-layer WTe2, which uniquely enables complementary convolutional processing. By employing the intrinsic coupling between ferroelectric polarization and quantum geometry in few-layer WTe2, we show that the second- and third-order nonlinear anomalous Hall effects (NLAHE) can be deterministically and electrically switched in a nonvolatile and correlated manner. The switching is robust at room temperature for ~104 cycles and retention of ~105 s. Furthermore, leveraging the opposite switching behaviors of second- and third-order NLAHE at room temperature, we demonstrate complementary in-memory computing and implement a hardware-level complementary convolution kernel. This kernel overcomes the inherent directional specificity of conventional convolutional networks and achieves a texture recognition accuracy of 98%, thereby illustrating a viable pathway towards physics-native computing through exploiting exotic physics in quantum materials.
Controlling the polarity of anomalous Nernst thermopower is a promising strategy for enhancing the performances of thermoelectric applications. However, realizing such control at room temperature (RT) in topological ferromagnets with high magnetic anisotropy (Ku) remains challenging. Here, we report RT polarity control of the anomalous Nernst effect (ANE) in quasi-two-dimensional nodal-line MnAlGe epitaxial thin films through Al/Ge compositional tuning while preserving robust high Ku. This polarity reversal originates from intrinsic Berry curvature contributions modulated by sublattice-selective carrier doping, as supported by spin-resolved electronic band structure analysis and hard X-ray photoemission spectroscopy. To demonstrate the practical feasibility, we also fabricated a meander-structured device combining MnAlGe with positive and negative polarity enhanced the thermoelectric output. Our results demonstrate that tuning the Fermi level relative to the nodal-line electronic structure while preserving high Ku enables controllable ANE polarity reversal within a single material, providing a route toward RT transverse thermoelectric devices.
Electron-doped strontium titanate has emerged as a prototypical quantum ferroelectric metal. It provides a fertile ground to explore how ferroelectric instability intertwined with itinerant electrons creates quantum phenomena, including unconventional superconductivity. Despite extensive studies, the microscopic origin of the ferroelectric transition remains unsettled, with distinct interpretations based on displacive mechanism driven by soft mode and order-disorder alignment of local dipoles. In particular, the local dipoles form nanoscale, spatially heterogeneous clusters, termed polar nanoregions, posing a significant challenge for probing or manipulating them. Here, using rotational anisotropy second harmonic generation, a symmetry-resolved probe, we quantify the orientational statistics of polar nanoregions in dilute electron-doped Sr$_{0.95}$Ba$_{0.05}$Ti$_{1-x}$Nb$_x$O$_3$. By tracking the alignment and meltdown of polar nanoregions in thermal cycles, we unambiguously demonstrate the order-disorder nature of the ferroelectric transition. We further show that, above transition temperature, femtosecond optical fields enable deterministic control of otherwise disordered polar nanoregions, realizing reversible write and readout of polar textures on ultrafast timescales. Our findings provide new insight into ferroelectric instability and establish an all-optical route of controlling polar metal systems where conventional electrical approaches are not feasible.
As-built printed ferromagnets typically exhibit higher coercivity than optimized wrought materials, yet existing explanations rely on empirical fits or costly simulations. Herein, we provide a missing analytical theory that links print parameters directly to cooling rates, cellular spacing, dislocation density, and domain-wall pinning coercivity. Informed by metallographic grain data and using a single fitted constant, our model predicts six experimental datasets for pure Fe, Fe-6.9Si, and a multicomponent alloy within a factor of 1.9. We demonstrate that configurational lattice distortion is negligible, implying that single-phase printed alloys follow dilute-pinning laws. Critically, we introduce a confinement factor, $E=\sqrt{λ_{c}/2δ_{w}}$, proving that solidification-induced dislocation packing makes cellular microstructures harder than conventionally cold-worked metals. The framework enables an alloy-sensitivity map to screen and rank compositions before manufacturing.
AgCrP2S6 combines a low-symmetry thiophosphate framework with an antiferromagnetic Cr sublattice and nonmagnetic Ag sites, providing a setting in which covalency and magnetic localization compete in the low-energy optical response. We combine single-crystal x-ray diffraction, Raman spectroscopy, lattice-dynamical calculations, and self-consistent vertex corrected Feynman diagrammatic many-body approaches to determine the structural, electronic, and excitonic properties of bulk AgCrP2S6. The material remains monoclinic between 100 and 300 K, with additional Ag-site disorder resolved at low temperature, and the optimized structure is dynamically stable. The many-body calculations yield a reduced quasiparticle gap relative to Cr trihalides, but the lowest excitons remain predominantly local: the calculated low-energy (~1.4 eV) excitation cluster is best described as a weakly bright, strongly anisotropic Frenkel exciton with dominant onsite d-d character and substantial ligand-assisted d-p admixture. Symmetry analysis in the C2h setting identifies this state as predominantly Bu and constrains its leading exciton-phonon coupling channels to Ag diagonal renormalization and Bg-mediated bright-dark mixing. These results place AgCrP2S6 in a localized excitonic regime in which the stronger p-d hybridization, relative to the more ionic Cr trihalides, narrows the quasiparticle gap, while the antiferromagnetic exchange and Ag-site dilution disfavor the intersite coherence associated with strongly delocalized low-energy excitons.
Understanding the magnetic interactions that promote high TC in topological quantum materials is essential to effectively design materials whose magnetic configuration persists at high temperatures and are thus practical to integrate into commercial spintronic devices. Here we provide evidence of the origin of the high TC observed in mixed Mn1+ySb2-yTe4 septuple layers and Sb2-yMnyTe3 quintuple layer structures. Analysis of the quintuple layer/septuple layer structures explored their magnetic behavior through different models of Mn-incorporation in the crystal, evidenced as Mn spin S = 5/2, and provided an explanation for the low magnetization per Mn atom observed, signature of competing ferromagnetic and antiferromagnetic interactions between Mn2+ ions. Our studies provide insight to better understand and control the Mn incorporation in our samples to optimize their properties.
Spin-orbit torque (SOT) provides an efficient route for manipulating magnetization in spintronic devices, and its accurate quantification is essential. Here, we investigate Co/Gd-based synthetic ferrimagnets using complementary magnetotransport and magneto-optical techniques. We use a Sagnac magneto-optical interferometry method to directly quantify current-induced magnetization tilting and extract the damping-like SOT effective field. The Sagnac measurements show good agreement with harmonic Hall analysis across different Co/Gd and Gd/Pt/Co heterostructures, providing a quantitative determination of the damping-like SOT effective field that does not rely on electrical transport signatures. By varying the Gd thickness and multilayer stacking order, we demonstrate that the damping-like torque is strongly influenced by spin transport and angular momentum conversion at rare-earth and heavy-metal interfaces. The observation of a finite torque in Gd/Pt/Co/Pt structures, where conventional Pt spin Hall contributions are expected to compensate, highlights the active role of the Gd layer in SOT generation. Furthermore, interface engineering enables perpendicular magnetic anisotropy in Gd/Pt/Co/Al heterostructures with a 2-nm-thick Co layer, allowing current-induced SOT switching at current densities of 8-10 MA/cm$^2$. These results establish rare-earth-based synthetic ferrimagnets as a versatile platform for engineering spin-orbit phenomena and optimizing low-power spintronic devices.
Skyrmions in 2D magnets are promising candidates for nonvolatile, low-power, and high-density spintronic memories. However, their experimental realization at the 2D limit remains challenging, owing to the difficulty in engineering the required chiral magnetic interactions. Here, we report the creation and direct imaging of Néel-type skyrmions in Janus 2D chromium chalcogenides using synchrotron X-ray photoemission electron microscopy, and scanning nitrogen-vacancy magnetometry, which exhibit field-free stability, nonvolatility, and size tunability. First-principles calculations and micromagnetic simulations reveal that Janus-surface-induced inversion-symmetry breaking enhances the Dzyaloshinskii-Moriya interaction, providing the microscopic mechanism for skyrmion stabilization and tunability. We further achieve reversible skyrmion writing and erasing using a single ultrafast laser pulse in a magnetic field as low as 300 Oe, demonstrating the excellent manipulability of this 2D magnetic system. These results establish Janus engineering as a route to creating and manipulating nonvolatile skyrmions in atomically thin magnets, with implications for skyrmion-based low-power spintronic devices.
The mutual exclusion of ferroelectricity and metallic conductivity is a long-standing tenet because itinerant electrons screen long-range Coulomb forces that stabilize the bulk polar order. Here, we break this paradigm by heavily doping a non-polar covalent semiconductor of cubic silicon carbide (3C-SiC) with nitrogen. This introduces heavy electron doping, inducing metallicity and driving a structural transition from the non-polar F-43m to the polar R3m symmetry via the pseudo-Jahn-Teller effect. Remarkably, we provide direct, atomic-scale visualization of about 180° polarization reversal under an external voltage bias in a ferroelectric metal. The strongly directional character of antibonding orbitals occupied by conduction electrons prevents them from screening the local Si-C polarization, resulting in the coexistence of metallicity and ferroelectricity. Ferroelectric tunnel junctions demonstrate nonvolatile memory properties with a well-defined high-resistance state (HRS) and low-resistance state (LRS), an ultrahigh response speed (~50 ns), an ultralow operating voltage (1 V), an endurance exceeding 85927 cycles, and a projected retention time of 100 years. Our results provide a novel strategy for pioneering ferroelectricity in a metal, a new ferroelectric metal platform for exploring exotic properties, and a ferroelectric device with high performance that meets the requirements for low consumption and high-speed non-volatile devices.