2026-01-19 | | Total: 35
X-ray absorption spectroscopy (XAS) and electron energy-loss spectroscopy (EELS) produce detailed information about oxidation state, bonding, and coordination, making them essential for quantitative studies of redox and structure in functional materials. However, high-throughput quantitative analysis of these spectra, especially for mixed valence materials, remains challenging as diverse experimental conditions introduce noise, misalignment, broadening of the spectral features. We address this challenge by training a machine learning model consisting of an autoencoder to standardize the spectra and a transformer model to predict both Cu oxidation state and Bader charge directly from L-edge spectra. The model is trained on a large dataset of FEFF-simulated spectra and evaluates model performance on both simulated and experimental data. The results of the machine learning model exhibit highly accurate prediction across the domains of simulated and experimental XAS as well as experimental EELS. These advances enable future quantitative analysis of Cu redox processes under in situ and operando conditions.
Migration of halide defects guides ion transport in metal halide perovskites and controls the kinetics of halide mixing and phase separation. We study the diffusion of halide vacancies and interstitials in \ce{CsPb(I_{x}Br_{1-x})_{3}} and \ce{CsPbI_{3}}/\ce{CsPbBr_{3}} heterojunctions by molecular dynamics simulations using neural network potentials trained on density functional theory calculations. We observe enhanced diffusion of both vacancies and interstitials in the mixed halide compounds compared to the single halide ones, as well as a difference in mobility between Br and I ions in the mixed compound. Diffusion across heterojunctions is governed by the interface structure, where a Br-rich interface blocks migration of vacancies in particular, but an I-rich interface is permeable.
Charge-density waves (CDWs) are ordered quantum states of conduction electrons accompanied by periodic lattice distortions. Raman scattering (RS) spectroscopy is therefore well suited for probing CDW-induced structural modulations. We investigate the CDW state in quasi-one-dimensional NbTe$_4$ using RS spectroscopy. At $T$=5~K, the resonantly enhanced Raman spectrum exhibits 25 phonon modes. Polarization-dependent measurements reveal a strong coupling between phonon-mode symmetry and crystallographic symmetry, with modes polarized parallel or perpendicular to the crystallographic $c$-axis, along which the one-dimensional structure is elongated. Temperature-dependent RS measurements identify a transition between commensurate and incommensurate CDW phases, accompanied by pronounced thermal hysteresis, with transition temperatures of approximately 45~K upon cooling and 90~K upon warming. The hysteresis width depends on the warming rate, indicating a finite nucleation rate of CDW domains and suggesting potential relevance for memory-device applications.
Theoretical spectroscopy, and more generally, electronic-structure theory, are powerful concepts for describing the complex many-body interactions in materials. They comprise a variety of methods that can capture all aspects, from ground-state properties to lattice excitations to different types of light-matter interaction, including time-resolved variants. Modern electronic-structure codes implement either a few or several of these methods. Among them, exciting is an all-electron full-potential package that has a very rich portfolio of all levels of theory, with a particular focus on excitations. It implements the linearized augmented planewave plus local orbital basis, which is known as the gold standard for solving the Kohn-Sham equations of density-functional theory. Based on this, it also offers benchmark-quality results for a wide range of excited-state methods. In this review, we provide a comprehensive overview of the features implemented in exciting in recent years, accompanied by short summaries on the state of the art of the underlying methodologies. They comprise density-functional theory and time-dependent density-functional theory, density-functional perturbation theory for phonons and electron-phonon coupling, many-body perturbation theory in terms of the $GW$ approach and the Bethe-Salpeter equation. Moreover, we capture resonant inelastic x-ray scattering, pump-probe spectroscopy as well as exciton-phonon coupling. Finally, we cover workflows and a view on data and machine learning. All aspects are demonstrated with examples for scientific relevant materials.
Copper halides Cs3Cu2X5 (X=Cl, Br, I) are promising materials for optoelectronic applications due to their high photoluminescence efficiency, stability, and large Stokes shifts. In this work, we uncover the chemical bonding origin of the Stokes shift in these materials using density functional theory calculations. Upon excitation, one [Cu2X5]3- anion undergoes sizeable local distortions, driven by Cu-X and Cu-Cu bond formation. These structural changes coincide with the formation of a self-trapped exciton, where particularly the hole is strongly localized on one anion. Analysis of the electronic structure and bonding reveals reduced antibonding interactions and enhanced bonding character in the excited state, stabilizing the distorted geometry. Our results establish a direct link between orbital-specific hole localization and bond formation. It provides a fundamental understanding of the excitation mechanism in Cs3Cu2X5 and offers design principles to tune optical properties in 0D copper halides.
Ultrafast optical excitation of metals induces a non-equilibrium energy distribution in the electronic system, with a characteristic step-structure determined by Pauli blocking. On a femtosecond timescale, electron-electron scattering drives the electrons towards a hot Fermi distribution. In this work, we present a derivation of the full electron-electron Boltzmann collision integral within the random-k approximation. Building on this approach, we trace the temporal evolution of the electron energy distribution towards equilibrium, for an excited but strongly degenerate Fermi system. Furthermore, we examine to which extent the resulting dynamics can be captured by the numerically simpler relaxation time approach, applying a constant and an energy-dependent relaxation time derived from Fermi-liquid theory. We find a better agreement with the latter, while specific features caused by the balance of scattering and reoccupation can only be captured with a full collision integral.
Mn-Sb site mixing directly impacts both the magnetic and topological properties of MnSb2Te4. This study reveals, unlike previously believed, that these anti-sites can be unevenly distributed within the crystal. To that end, a polycrystalline sample was created with a two-step synthesis using MnTe and Sb2Te3 as precursors. DC-SQUID magnetometry was used to confirm its magnetic properties. In addition, the use of High-Resolution Scanning Transmission Electron Microscopy combined with Energy-Dispersive X-ray Spectroscopy allowed us to identify the presence of an inversion-breaking asymmetry in the anti-site distribution. This reduced-symmetry structure bears resemblance to the recently proposed class of Janus materials and thus warrants further exploration due to its potential for combining topology and magnetism with other effects, such as non-linear optics and piezoelectricity. Finally, to further elucidate the interplay between site mixing, doping, topology, and magnetism, a method for growing MnSb2Te4 thin films over amorphous SiOx using Sb2Te3 seeds is introduced. The successful Van der Waals epitaxy of MnSb2Te4 over Sb2Te3 seeds using Pulsed Laser Deposition is confirmed using Scanning Transmission Electron Microscopy. This represents a crucial step in incorporating these materials into a Si-based architecture, which offers the possibility of controlling the Fermi lever via gating.
In recent years, interest in 2D Janus materials has grown exponentially, particularly with regard to their applications in spintronics and optoelectronic devices. The defining feature of Janus materials is the ordered arrangement of different layer terminations - creating chemically distinct surfaces and an inherent out-of-plane polarity. Among the few known Janus materials, RhSeCl is particularly intriguing as a rare example of an intrinsic Janus compound. Owing to its exceptional chemical stability, RhSeCl offers a promising platform for exploring the physics related to the Janus-structure. However, synthesising large, high-quality crystals of this compound remains a significant challenge. Here, we report a novel synthetic pathway for growing crystals up to 6 mm in lateral size via a two-step self-selecting vapour growth reaction. We further present a comprehensive comparison of newly developed synthesis routes with all previously reported methods for RhSeCl. During these investigations, we identified a previously unreported impurity that forms in specific growth pathways and demonstrate how it can be avoided to obtain phase-pure few- and monolayer flakes. We showcase the reproducibility of the process to obtain high-quality, large single-crystals and flakes.
Colloidal semiconductor nanocrystals are promising building blocks for optoelectronics due to their solution processability, spectral tunability, and ability to self-assemble into complex architectures. However, their use in lasing application remains limited by high working thresholds, rapid nonradiative losses from Auger recombination, and sensitivity to environmental conditions. Here, we report hybrid microscale supraparticles composed of core/shell CdSe/ZnS quantum dots (QDs) and CdSe/CdxZn1-xS nanoplatelets (NPLs), which overcome these limitations through efficient, cavity-mediated energy funneling and coupling. Broadband absorbing QDs rapidly transfer excitation to narrow emitting NPLs, enabling stable whispering gallery mode lasing with a low threshold of 0.35 mJ/cm2. These supraparticles retain optical performance after prolonged exposure to air, water, and continuous irradiation, offering practical advantages for optoelectronic devices and advanced pigment technologies. Ultimately, our approach provides a versatile, programmable platform for optical amplification and tunable emission control within colloidal photonic architectures. Keywords
The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium nitride on silicon substrates offers the opportunity to leverage existing expertise and wafer-scale manufacturing to integrate bright quantum emitters in this material within cavities, diodes, and photonic circuits. Until now, it has only been possible to grow GaN QEs at uncontrolled depths on sapphire substrates, which is disadvantageous for potential device architectures. Here, we report a method to produce GaN QEs by metal-organic vapor phase epitaxy at a controlled depth in the crystal through the application of silane treatment and subsequent growth of 3D islands. We demonstrate this process on highly technologically relevant silicon substrates, producing room-temperature QEs with a high Debye Waller factor and strongly anti-bunched emission.
Tungsten exhibits exceptional temperature and radiation resistance, making it well-suited for applications in extreme environments such as nuclear fusion reactors. Additive manufacturing offers geometrical design freedom and rapid prototyping capabilities for these applications, provided the intrinsic brittleness and low printability of tungsten can be overcome. Designing tungsten alloys with improved ductility, and thus printability in additive manufacturing, can be accelerated using a computationally derived performance predictor to screen out brittle compositions. Calculations of the Pugh ratio using density functional theory may serve this purpose, given its correlation with ductility. This process can be made more efficient through the use of machine learning interatomic potentials to accelerate density functional theory calculations. Here, we demonstrate that machine learning interatomic potentials can effectively identify optimal alloy compositions in the W-Ta-Nb system along the melting point-Pugh ratio Pareto front. The trend in Pugh ratio as a function of tungsten fraction is explained in terms of the electronic density of states at the Fermi level. Experimental validation reveals a strong correlation between the computed Pugh ratio and the observed crack fractions in additively manufactured alloys. Notably, the two alloys predicted to have the highest Pugh ratio values, W20Ta70Nb10 and W30Ta60Nb10, exhibit no intergranular microcracking in experiments.
We have performed density functional theory (DFT) calculations to characterize the energetics, and the atomic and electronic structure, of stacking faults in GaN, both in the stable hexagonal wurtzite (wz) phase and in the metastable cubic zincblende (zb) phase. In wz GaN, SFs on the (0001) planes can be divided into three different intrinsic stacking faults (I1, I2, and I3) and oneextrinsic stacking fault (E). In zb GaN, SFs form along (111) directions, giving one type each of intrinsic, extrinsic and twin SFs. Based on the calculated formation energy, I1 is the most stable SF of wz GaN in agreement with experiment. For zb GaN, the intrinsic stacking fault is the most dominant planar defect. To characterize the effect of the stacking faults on the electronic structure of the material, we examined the band density. We found that the bands near the valence band maximum in wz GaN are localised on the Ga-polar side of the stacking fault (i.e. on the Ga side of the Ga-N bonds perpendicular to the SF), with the bands near the conduction band minimum more on the N-polar side, though somewhat delocalised. We found the opposite trend in zb GaN; this behaviour is caused by a redistribution of charge near the interface. We also show the band offsets for the stacking faults, finding that they are very sensitive to local conditions, but can all be described as type II interfaces, with the presence of a stacking fault reducing the gap locally.
Impact ionization probabilities were calculated in a CdHgTe quantum well, where the distance between electron subbands is close to the band gap energy. This band structure enables impact ionization with small momentum transfer for electrons in the second subband. The study demonstrates that such processes increase the impact ionization probability by approximately two orders of magnitude compared to the impact ionization probability for electrons in the first subband, for which transitions with small momentum changes are impossible. The probability of single impact ionization during the electron energy loss due to optical phonon emission is estimated. Experimental methods for detecting impact ionization in this structure are discussed.
The strongly constrained and appropriately normed (SCAN) meta-GGA functional is a milestone achievement of electronic structure theory. Recently, a revised and restored form (r$^2$SCAN) has been suggested as a replacement for SCAN in high-throughput applications. Here, we assess the accuracy and reliability of the r$^2$SCAN meta-GGA functional for the group IV elemental solids carbon (C), silicon (Si), germanium (Ge), and tin (Sn). We show that the r$^2$SCAN functional agrees closely with its parent functional SCAN for elastic constants, bulk moduli, and phonon dispersions, but the numerical stability of r$^2$SCAN is superior. Both meta-GGA functionals outperform standard GGA (Perdew-Burke-Ernzerhof) in terms of accuracy and approach the level of common hybrid functionals (Heyd-Scuseria-Ernzerhof). However, we find that r$^2$SCAN performs much worse than SCAN for the $α\leftrightarrow β$ phase transition of both Ge and Sn, yielding larger phase energy differences and transition pressures.
The dynamic strength of concrete under complex loading conditions is a key consideration in the design and maintenance of infrastructures. To assess this mechanical property, Split Hopkinson Pressure Bar (SHPB) tests are typically adopted across a wide range of loading and confining conditions. In this study, mesoscale modelling based on the finite element method (FEM) is employed to simulate SHPB tests on three-phase concrete with realistic aggregate shape, in order to investigate the effects of loading ramp rate, internal friction, and confining pressure on the dynamic increase factor (DIF). Microscopic evidence to explain these effects is explored through analysing the distributions of the internal strain rate and local damage. As key results, increasing loading ramp rates, internal friction, and confining pressure can generally leads to higher DIF values. Only a higher loading ramp rate significantly amplifies the strain-rate effect on the DIF, as evidenced by pronounced increases in both internal strain rate and damage in the mortar and aggregate phases. In contrast, higher internal friction and confining pressure weaken the strain-rate effect on the DIF. Both can be attributed to the mortar phase, which shows a less pronounced increase in damage with increasing strain rate. This study enriches the understanding of the dynamic fracture of concrete toward complex loading scenarios.
Two-dimensional Janus structures have garnered rapidly growing attention across multidisciplinary fields. However, despite extensive theoretical and experimental efforts, a principle for designing intrinsic Janus materials remains elusive. Here, we propose a first-principles alloy theory based on cluster expansion, incorporating a strong repulsive interaction of a cation-mediated anion-pair cluster and refined short-range cluster-cluster competitions, to unravel the formation mechanism of intrinsic Janus structures with a distorted 1T phase among numerous competing phases. Our theory not only explains why intrinsic Janus structures are accidentally observed in RhSeCl and BiTeI which are composed of alloyed elements from different groups, but also accurately predicts a wide range of 1T-like intrinsic Janus materials that are ready for synthesis. Intriguingly, as demonstrated in the case of RhSeCl, we reveal that intrinsic Janus materials can exhibit anomalous second-harmonic generation (SHG) with a distinct quantum geometric effect, originating from strong lattice and chemical-potential mirror asymmetry. Furthermore, a novel skin effect unexpectedly emerges in finite-thickness RhSeCl, accompanied by a hidden SHG effect within the bulk region. Our theory paves the way for the ab initio design of intrinsic Janus materials, significantly accelerating progress in Janus science.
Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were observed upon decreasing the Fe layer thickness t_Fe from 200 to 10 Angstrom. The R_s observed for t_Fe = 10 Angstrom is about three orders of magnitude larger than that of bulk Fe. The scaling law between R_s and longitudinal electrical resistivity (Rho) suggests that the side jump is the dominant mechanism of the anomalous Hall effect. The observed largest Hall sensitivity of 433 Ohm/T surpasses that of the semiconducting GaAs and InAs Hall sensors already reported.
SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with (110) texture and that the two SiO2 layers are amorphous. Magnetic measurements performed with the applied field in in-plane and perpendicular direction to the film plane confirmed that the samples are soft ferromagnetic having strong in-plane magnetic anisotropy. The temperature dependence of magnetization shows complex behavior with the coexistence of both ferromagnetic and superparamagnetic properties. The transport properties of the samples as studied through Hall effect measurements show anomalous Hall effect (AHE). An enhancement of about 14 times in the saturation anomalous Hall resistance (R_Ahs) was observed upon reducing the t_Fe from 300 to 50 Angstrom. The maximum value of R_Ahs = 2.3 Ohm observed for tFe = 50 Angstrom sample is about 4 orders of magnitude larger than that reported for bulk Fe. When compared with the single Fe film, a maximum increase of about 56% in the R_Ahs was observed in sandwiched Fe (50 Angstrom) film. Scaling law suggests that the R_s follows the longitudinal resistivity (Rho) as, R_s proportional to (Rho)^1.9, suggesting side jump as the dominant mechanism of the AHE. A maximum enhancement of about 156% in the sensitivity S was observed.
Solid-state electrolytes (SSEs) are attractive for next-generation lithium-ion batteries due to improved safety and stability but their low room-temperature ionic conductivity hinders practical application. Experimental synthesis and testing of new SSEs remain time-consuming and resource intensive. Machine learning (ML) offers an accelerated route for SSE discovery; however, composition-only models neglect structural factors important for ion transport while graph neural networks (GNNs) are challenged by the scarcity of structure-labeled conductivity data and the prevalence of crystallographic disorder in CIFs. Here, we train two complementary predictors on the same room-temperature, structure-labeled dataset (n = 499). A gradient-boosted tree regressor (GBR) combining stoichiometric and geometric descriptors achieves best performance (MAE = 0.543 in log(S cm-1)), and Shapley Additive exPlanations (SHAP) identifies probe-occupiable volume (POAV) and lattice parameters as key correlations for conductivity. In parallel, we fine-tune large language models (LLMs) using compact text prompts derived from CIF metadata (formula with optional symmetry and disorder tags), avoiding direct use of raw atomic coordinates. Notably, Llama-3.1-8B-Instruct achieves high accuracy (MAE = 0.657 in log(S cm-1)) using formula and symmetry information, eliminating the need for numerical feature extraction from CIF files. Together, these results show that global geometric descriptors improve tree-based predictions and enable interpretable structure-property analysis, while LLMs provide a competitive low-preprocessing alternative for rapid SSE screening.
Anomalous Hall effect studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient are obtained in [Si(50 angstrom)/Fe(tFe)]_20 multilayers when decreasing the Fe layer thickness from 100 Angstrom to 20 Angstrom. The largest anomalous Hall coefficient (Rs) of 1.4 x 10^-7 Ohm m/T was found for t_Fe=20 Angstrom, which is about three orders of magnitude larger than that of pure Fe and Fe/Cr, Al/Fe, Cu/Fe, SiO2/FePt/SiO2 multilayers. The ordinary Hall coefficient R_0 was about two orders of magnitude larger than that of pure Fe. The R_s was found to vary with the longitudinal electronic resistivity, Rho as R_s proportional to (Rho)^2.2, indicating the role of interfaces for the enhancement of the anomalous Hall effect in the multilayers. An increase of Hall sensitivity from 9 mOhm/T to 1.2 Ohm/T is observed on decreasing tFe from 100 Angstrom to 10 Angstrom. The high Hall sensitivity obtained is about three orders of magnitude larger than that of Al/Fe and Cu/Fe multilayers, showing it as an emerging candidate for Hall element for potential applications.
Accelerating alkali-ion battery discovery requires accurate modeling of atomic-scale kinetics, yet the reliability of universal machine learning interatomic potentials (uMLIPs) in capturing these high-energy landscapes remains uncertain. Here, we systematically benchmark state-of-the-art uMLIPs, including M3GNet, CHGNet, MACE, SevenNet, GRACE, and Orb, against DFT baselines for cathodes and solid electrolytes. We find that the Orb-v3 family excels in static migration barrier predictions (MAE $\approx$ 75--111 meV), driven primarily by architectural refinements. Conversely, for dynamic transport, the GRACE model trained on the OMat24 dataset demonstrates superior fidelity in reproducing ion diffusivities and structural correlations. Our results reveal that while architectural sophistication (e.g., equivariance) is beneficial, the inclusion of high-temperature, non-equilibrium training data is the dominant driver of kinetic accuracy. These findings establish that modern uMLIPs are sufficiently robust to serve as zero-shot surrogates for high-throughput kinetic screening of next-generation energy storage materials.
Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.
Incorporating self-interaction corrections (SIC) significantly improves chemical reaction barrier height predictions made using density functional theory methods. We present a detailed, orbital-by-orbital analysis of these corrections for three semi-local density functional approximations (DFAs) situated on the three lowest rungs of the Jacob's Ladder of approximations. The analysis is based on Fermi-Löwdin Orbital Self-Interaction Correction calculations performed at several steps along the reaction pathway from the reactants (R) to the transition state (TS) to the products (P) for four representative reactions selected from the BH76 benchmark set. For all three functionals, the major contribution to self-interaction corrections of the barrier heights can be traced to stretched bond orbitals that develop near the TS configuration. The magnitude of the ratio of the self-exchange-correlation energy to the self-Hartree energy (XC/H) for a given orbital is introduced as an indicator of one-electron self-interaction error. For the exact, but unknown density functional, XC/H = 1.0 for all orbitals, while for the practical DFAs studied here, XC/H spans a range of values. The largest values are obtained for stretched or strongly lobed orbitals. We show that significant differences in XC/H for corresponding orbitals in the R, TS, and P configurations can be used to identify the major contributors to the SIC of barrier heights and reaction energies. Based on such comparisons, we suggest that barrier height predictions made using the SCAN meta-generalized gradient approximation may have attained the best accuracy possible for a semi-local functional using the Perdew-Zunger SIC approach.
The exploration of novel topological insulators (TIs) beyond binary chalcogenides has been accelerated in pursuit of exotic quantum states and device applications. Here, the layered ternary chalcogenide Ge2Bi2Te5 is identified as a three-dimensional TI. The bulk electronic structure of Ge2Bi2Te5 features a hole-type Fermi surface at Fermi level EF, which dominates the transport properties. Moreover, an unoccupied topological surface state with a Dirac point located at 290 meV above EF has been observed. Theoretical calculations confirm a bulk bandgap and a nontrivial Z2 topological invariant (000;1). The present study demonstrates that the material family of layered tetradymite-like ternary compounds is an important platform to explore exotic topological phenomena.
The capabilities of a plug-flow fixed-bed cell for operando studies of heterogeneous catalysts are demonstrated using laboratory-based X-ray absorption spectroscopy (XAS) with a von Hamos spectrometer. The cell operates at temperatures up to 1000 deg C and pressures up to 10 bar, equipped with three mass flow controllers and two infrared lamps for rapid heating under inert/reactive gas atmospheres. Proof-of-principle studies include in situ MnO oxidation in 5% Ni/MnO and operando Ni nanoparticle evolution in 20-NiO/COK-12 (20.2% NiO on SiO2) during CO2 methanation before/after activation. Within 5-15 min per spectrum, oxidation state changes are resolved while catalytic activity is simultaneously quantified by online GC. Extended datasets and methods are available in the ancillary file SI.pdf (Supplementary Information file). A shortened version is submitted to Journal of Analytical Atomic Spectrometry as a Technical Note.