2025-03-28 | | Total: 34
Thin film effects on the Magnetocrystalline Anisotropy Energy (MAE) of MnN were studied using density functional theory (DFT). Initially, strain effects on bulk MnN were considered as a proxy for lattice-matching induced strain and a linear relationship between the c/a ratio and the MAE was found. This relationship was explained in terms of underlying point group symmetry. Strain and charge-transfer effects were then considered for an ultra-thin film. It was found that a Ta seed-layer suppresses the net spin moment on the Mn ions, leading to a reduction of the MAE.
The mechanical loss angle of amorphous TiO2-doped GeO2 can be lower than 10−4, making it a candidate for Laser Interferometer Gravitational-wave Observatory (LIGO) mirror coatings. Amorphous oxides have complex atomic structures that are influenced by various factors, including doping concentration, preparation, and thermal history, resulting in different mass densities and physical properties. Modeling at atomistic level enables capturing these effects by generating atomic structure models according to experimental conditions. In order to obtain reliable and physical amorphous models at an affordable cost, we develop classical and machine-learning potentials (MLP) to speed up simulations. First-principles calculations are used to train and validate MLP as well as validating structure models. To better reproduce properties such as elastic modulus, radial distribution function (RDF) and the variations in mass density of doped amorphous oxides, density functional theory (DFT) calculations are used to optimize the final models. We find that the mass densities of amorphous systems are correlated with the total void volume. The experimental mass density matches the models with the most symmetric potential energy wells under volume change. The elastic response of the metal-oxygen network is also studied. The 27\% TiO2 doped GeO2 system shows the least number of large atom-atom distance changes, while for 44\% TiO2 doped GeO2, a majority of Ti-O distances are significantly changed. In response to strains, the metal-oxygen network at low mass densities prefers to adjust bond angles, while at high mass densities, the adjustment is mainly done by changing atom-atom distance.
This proceeding discusses nonequilibrium effects in matter exposed to XUV/X-ray irradiation. When ultrashort, intense XUV/X-ray pulses interact with materials, they trigger a complex sequence of processes, including electronic excitation, nonequilibrium electron kinetics, energy exchange with the atomic system, electronic thermalization, and subsequent atomic dynamics. These effects were investigated using XTANT-3, a hybrid simulation tool that simultaneously models all relevant dynamics. XTANT-3 integrates (a) a Monte Carlo transport method for photon absorption and fast electron kinetics, (b) the Boltzmann equation for nonequilibrium slow electron dynamics, (c) a transferable tight-binding approach for electronic structure evolution and interatomic potential modeling, and (d) molecular dynamics for atomic system response. This approach enables a detailed study of nonequilibrium effects in each subsystem and their interplay with nonthermal damage, where electronic excitation alters the interatomic potential. Methods of quantifying the nonequilibrium in the electronic and atomic subsystems are discussed.
CuFeS2 is an altermagnetic semiconductor that is lattice-matched with silicon and has a high Néel temperature. It is nonpolar and magnetically compensated in its structural ground state. However, the crystal belongs to a magnetic symmetry class allowing simultaneous piezoelectricity and -magnetism, indicating that distortion by shear strain may enable functional properties not observed in its tetragonal ground state. This first-principles study explores how biaxial and shear strain affect the crystal structure and functional properties. Biaxial strain lowers crystal symmetry when applied to two of the three crystallographic {001} planes considered, enhancing the altermagnetic lifting of the Kramers degeneracy. Shear strain has a compressive effect on the crystal, enhancing the effects on the electronic structure seen under biaxial compressive strain. Applying it to any one of the three {001} planes induces a polar phase with an out-of-plane electric polarization, perpendicular to the strained plane. Moreover, applying shear strain to two out of the three {001} planes induces a net magnetization simultaneously with electric polarization, producing a multiferroic response.
The electric properties of a model fast-ion electrolyte ((100-x)SiS2-xNa2S) glass are investigated by means of classical molecular dynamics simulations. These systems appear promising for battery applications and the conductivity is thought to be essentially driven by the concentration of charge carriers (Na) so that the usual amount is found to be of about 50% < x < 80%. We first set up a Buckingham-Coulomb type potential that describes the atomic structure and experimental structure functions (structure factor) in an improved fashion with respect to previous reported force fields. A systematic investigation of properties with modifier content Na2S permits to acknowledge an unexpected result which manifests by a near constant of conductivity upon Na2S for various isotherms in the liquid state. The analysis indicates that unlike Li-based electrolytes, the diffusivity difference between networks species (Si,S) and modifier (Na) is too small so that the contribution to conductivity is essentially driven by the former. The main reason is the reduction of the concentration of network species in the range 66% < x < 80% without any dramatic increase in Na diffusivity, and the emergence of molecular Na2S in the structure at large modifier content which also induces profound structural changes. Unlike Lithium glassy electrolytes, the design of Na-based batteries must, therefore, take into account the contribution of the network species.
This study demonstrates the direct correlation between the presence of the L21 ordered phase and the large enhancement in the thermoelectric performance of Fe2VAl thin films deposited on MgO and Al2O3 substrates at temperatures varying between room temperature and 950∘C. We employ both experimental techniques and computational modeling to analyze the influence of crystallographic orientation and deposition temperature on the thermoelectric properties, including the Seebeck coefficient, electrical conductivity, and thermal conductivity. Our findings indicate that the presence of the L21 phase significantly enhances the power factor (PF) and figure of merit (zT), surpassing previously reported values for both bulk and thin film forms of Fe2VAl, achieving a PF of 480 μW/m⋅K2 and a zT of 0.025.
The 3D microstructure of porous media, such as electrodes in lithium-ion batteries or fiber-based materials, significantly impacts the resulting macroscopic properties, including effective diffusivity or permeability. Consequently, quantitative structure-property relationships, which link structural descriptors of 3D microstructures such as porosity or geodesic tortuosity to effective transport properties, are crucial for further optimizing the performance of porous media. To overcome the limitations of 3D imaging, parametric stochastic 3D microstructure modeling is a powerful tool to generate many virtual but realistic structures at the cost of computer simulations. The present paper uses 90,000 virtually generated 3D microstructures of porous media derived from literature by systematically varying parameters of stochastic 3D microstructure models. Previously, this data set has been used to establish quantitative microstructure-property relationships. The present paper extends these findings by applying a hybrid AI framework to this data set. More precisely, symbolic regression, powered by deep neural networks, genetic algorithms, and graph attention networks, is used to derive precise and robust analytical equations. These equations model the relationships between structural descriptors and effective transport properties without requiring manual specification of the underlying functional relationship. By integrating AI with traditional computational methods, the hybrid AI framework not only generates predictive equations but also enhances conventional modeling approaches by capturing relationships influenced by specific microstructural features traditionally underrepresented. Thus, this paper significantly advances the predictive modeling capabilities in materials science, offering vital insights for designing and optimizing new materials with tailored transport properties.
Coherent acoustic phonons (CAPs)−propagating strain waves that can dynamically modify the structure and symmetry of a crystal−offer unique opportunities for controlling material properties. We investigate CAP generation in the Janus-like layered alloy tungsten sulfide selenide (WSxSe1−x, hereafter WSSe). Employing high-fluence photoexcitation at 400 nm combined with ultrafast transient reflection spectroscopy, we capture the carrier-lattice dynamics governed by a cascade of processes including rapid exciton formation, phonon recycling, and thermoelastic deformation. These phenomena precede the emergence of a robust CAP mode at 27 GHz. Notably, the CAP amplitude in WSSe substantially exceeds that observed in the symmetric parent crystals WS2 and WSe2, which we attribute to an enhanced coupling mediated by a built-in out-of-plane electric field arising from the inversion asymmetry of the WSSe alloy. Furthermore, the implementation of a tailored two-pulse excitation sequence enables optical control of the CAP, underscoring the potential of WSSe and related Janus-like layered alloys as versatile building blocks in optomechanical and nanoacoustic device applications.
The geometric state of a flat boundary is frequently described using the so-called macroscopic parameters. They are a principal tool for dealing with interfaces at the continuous scale. The paper describes a new method for macroscopic identification of boundaries. The proposed approach is based on Euler angles representing orientations of the crystals. Two pairs of the angles are directly related to two vectors normal to the boundary plane in the crystal reference frames, and the new boundary representation can be viewed as a triplet composed of these vectors and the angle of rotation about the axis perpendicular to the plane. The representation resembles the `interface-plane scheme', but unlike the latter, it is a proper parameterization. Basic practical aspects of the parameterization (such as equivalences due to symmetries, fundamental regions, uniform distribution of boundaries) are considered. The parameterization is applied to examination of Bulatov-Reed-Kumar model of grain boundary energy and reveals its previously unknown features. The proposed boundary identification method, apart from its use in numerical calculations, appeals to physical intuition.
A recently published article in Inorganic Chemistry (DOI: 10.1021/acs.inorgchem.4c00599) offers theoretical calculations on the effects of pressure on the structural, optical, and magnetic behavior of CsMnF_{4}. Although a thorough theoretical and experimental understanding of this material is certainly warranted, there are previously published experimental results on CsMnF_{4}, as well as on other Mn^{3+} fluorides, under pressure that have not been considered in the aforementioned article. These findings raise questions about the accuracy of the theoretical estimates and the validity of the methodology used to determine the reported structural, optical, and magnetic properties. This paper intends to provide the readers of Inorganic Chemistry and the broader scientific community with a perspective on a publication that directly contradicts interpretations presented in prior research.
Spontaneous structural relaxation is intrinsic to glassy materials due to their metastable nature. For phase-change materials (PCMs), the resultant temporal change in electrical resistance seriously hamper in-memory computing (IMC) applications. Here, we report an ab-initio-calculation-informed design of amorphous PCM composed of robust "molecule-like" motifs with minimal Peierls distortion, depriving the amorphous alloy of structural ingredients that would gradually evolve upon aging to entail resistance drift. We demonstrate amorphous CrTe3 thin films that display practically no resistance drift at any working temperature from -200 to 165 degree C. We achieve multilevel programming of CrTe3 through both step-wise crystallization and step-wise amorphization using a hybrid opto-electronic device at various temperatures. Moreover, the application potential of CrTe3 in neuromorphic computing is testified by its incorporation in a vehicle with automatic path-tracking function. Our work opens a new avenue to achieving IMC-requisite properties via judicious design of the composition and atomic-level structure of disordered PCM alloys.
Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a critical challenge for high-performance device applications. This study investigates Si diffusion mechanisms in bulk GaN using first-principles density functional theory (DFT) calculations, supported by ultra-high-pressure annealing (UHPA) experiments. Vacancy-mediated diffusion pathways were analyzed using the SIESTA code, with minimum energy paths (MEPs) and activation barriers determined via the nudged elastic band (NEB) method. The results indicate that Si diffusion barriers vary with crystallographic direction, with the lowest barrier of 3.2 eV along [11-20] and the highest barrier of ~9.9 eV along [1-100], rendering diffusion in this direction highly improbable. Alternative diffusion mechanisms, including direct exchange and ring-like migration, exhibit prohibitively high barriers (>12 eV). Phonon calculations confirm that temperature-induced reductions in effective diffusion barriers are minimal. Experimental validation using SIMS analysis on Si-implanted GaN samples subjected to UHPA (1450{\deg}C, 1 GPa) confirms negligible Si diffusion under these extreme conditions. These findings resolve inconsistencies in prior reports and establish that Si-doped GaN remains highly stable, ensuring reliable doping profiles for advanced electronic and optoelectronic applications.
Magnetocaloric effect in [NbIV{(μ-CN)4MnII(H2O)2]}2⋅4H2O]n molecular magnet is reported. The compound crystallizes in the tetragonal I4/m space group. It exhibits a phase transition to a long-range ferrimagnetically ordered state at Tc = 47.0(2) K. In order to calculate magnetocaloric properties relaxation calorimetry measurements are performed and a self-consistent scheme based on the magnetic entropy counting for the baseline determination is developed. The molecular field model is used to simulate the temperature and field dependence of the magnetic entropy change. The exchange coupling constant between the MnII and NbIV ions is estimated to be equal to -10.26 K. At the lowest temperatures and for the lowest applied field change values the inverse magnetocaloric effect is revealed, which seems to be characteristic for systems with antiferromagnetic coupling. The temperature dependence of exponent n quantifying the field dependence of ΔSM is calculated on the basis of the experimental results and within the mean-field model. Its predicting power for the universality class of the critical behavior is discussed. Finally, the studied compound is employed as the working substance in the two most natural refrigeration cycles, i.e. the Brayton cycle and the Ericsson cycle, to assess its cooling effectiveness. A cascade system is suggested for the most efficient cooling performance.
A two-dimensional electron gas (2DEG) forms at the interface of complex oxides like SrTiO3 (STO) and LaTiO3 (LTO), despite each material having a low native conductivity, as a band and a Mott insulator, respectively. The interface 2DEG hosts charge carriers with moderate charge carrier density and mobility that raised interest as a material system for applications like field-effect transistors or detectors. Of particular interest is the integration of these oxide systems in silicon technology. To this end we study the carrier dynamics in a STO/LTO/STO heterostructure epitaxially grown on Si(001) both experimentally and theoretically. Linear THz spectroscopy was performed to analyze the temperature dependent charge carrier density and mobility, which was found to be in the range of 1012 cm2 and 1000 cm2V−1s−1, respectively. Pump-probe measurements revealed a very minor optical nonlinearity caused by hot carriers with a relaxation time of several 10 ps, even at low temperature. Density functional theory calculations with a Hubbard U term on ultrathin STO-capped LTO films on STO(001) show an effective mass of 0.64-0.68 me.
We report X-ray diffraction patterns and calculated electronic band structures of the Dirac line-nodal material CaSb2 under pressure. Its superconducting transition temperature (Tc=1.7 K) increases under pressure and reaches a maximum at 3.4 K at around 3 GPa. We observed subtle anomalies in lattice parameters accompanied by a jump in bulk modulus without any change in crystal symmetry at around 3 GPa. First-principles calculations revealed that the distorted lattice of Sb(1) site deforms in the pressure range of 0-3 GPa. Those results suggest the existence of a first-order structural transition and arouse expectations for unusual phononic properties affecting the superconducting state. The calculated pressure dependence of the electronic density of states (DOS) confirms that it is not the change in the DOS that governs the variations in Tc.
In orthorhombic perovskite oxides (RMO3), substituting R3+ rare-earth cations tailors the spin, orbital, and charge degrees of freedom of the central M3+ transition metal cations through lattice distortions. In turn, these modify also the surrounding environment of R3+. When both R3+ and M3+ exhibit magnetic properties, phenomena such as spin reorientation and magnetization reversal can occur. In fact, the underlying exchange interactions between M-3d spins and R-4f magnetic moments enrich the multifunctional character of RMO3, particularly when combined with structural distortions. They play a crucial role in achieving appealing properties such as robust magnetoelectricity with non-collinear magnetic orders. Here, we explore the exchange coupling in epitaxial PrVO3 thin films, selectively probing the magnetism of cation sublattices, and uncovering simultaneous V3+ 3d spin reorientation and Pr3+ 4f magnetization reversal using spectroscopy techniques. By strain engineering, we manipulate the lattice distortions to rationalize their role in coupling 3d spins and 4f magnetic moments. Theorectical calculations show that octahedral rotations and Jahn-Teller distortions act as tuning mechanisms, promoting competition between orbital and spin orders. The observed coupling between magnetic cations and lattice distortions can be extended to other orthorhombic RMO3 systems, advancing the understanding of controlling spins in engineered perovskite heterostructures and superlattices.
Crystal structure prediction (CSP) is crucial for identifying stable crystal structures in given systems and is a prerequisite for computational atomistic simulations. Recent advances in neural network potentials (NNPs) have reduced the computational cost of CSP. However, searching for stable crystal structures across the entire composition space in multicomponent systems remains a significant challenge. Here, we propose a novel genetic algorithm (GA) -based CSP method using a universal NNP. Our GA-based methods are designed to efficiently expand convex hull volumes while preserving the diversity of crystal structures. This approach draws inspiration from the similarity between convex hull updates and Pareto front evolution in multi-objective optimization. Our evaluation shows that the present method outperforms the symmetry-aware random structure generation, achieving a larger convex hull with fewer trials. We demonstrated that our approach, combined with the developed universal NNP (PFP), can accurately reproduce and explore phase diagrams obtained through DFT calculations; this indicates the validity of PFP across a wide range of crystal structures and element combinations. This study, which integrates a universal NNP with a GA-based CSP method, highlights the promise of these methods in materials discovery.
Refractory high-entropy alloys can function at temperatures exceeding those of nickel-based superalloys. Aluminum, as an alloying element, contributes multiple advantageous characteristics to various high-temperature alloys. The Aluminum containing RHEAs have the potential of being the best high temperature materials. In the present study we use the machine learning(ML) technique to determine the phase and yield strength of aluminum containing RHEAs. In this regard, we created the Al-RHEA dataset from the published [1] compilation of RHEA data. We applied multiple ML algorithms to the training set and determined that the CatBoost algorithm gave the best performance. We optimized the hyperparameters of this algorithm and tested it for robustness using cross-validation methods. The CatBoost model predicts the yield strength of test data accurately (R2=0.98). The algorithm was applied to estimate the yield strength for alloy compositions absent from our current dataset, achieving accurate predictions for these unrecorded alloys indicating that the model has learnt the underlying rules to predict the yield strength sufficiently. We then predict the effect of varying aluminum content on yield strength of RHEA. The model predictions were rationalized in view of published data on Al-RHEAs. We also developed the CatBoost classifier model that predicts the phases formed in the alloy of a given composition accurately. The cause for errors in phase prediction is discussed.
High density data storage and spin-logic devices require highly efficient all-electric control of spin moments. So far, charge-to-spin conversion through the spin Hall effect limits to d-orbital materials associated with strong spin-orbit coupling, especially heavy metals. However, d-orbital heavy metals with strong spin-orbit coupling results in a short spin diffusion length, which restricts the spin transport and accumulation in spintronic devices. Therefore, the conflict between charge-to-spin conversion efficiency and spin transport ability is irreconcilable in d-orbital materials. Here, we report a large charge to spin conversion experimentally observed in the p-orbital In2Bi alloy, exhibiting the coexistence of a large spin Hall angle comparable to heave metal Pt and a long spin diffusion length (4 times that of Pt). First-principles calculations reveal that topological symmetry-protected gap opening near the Fermi level results in large Berry curvature-related spin Hall conductivity. Due to the delocalized nature of p-orbitals and semimetal properties of In2Bi, its spin current can overcome the physical barriers between spin Hall angle and spin diffusion length in d-orbital metals, thereby advancing the development of high-performance spintronic devices.
In Weyl semi-metals, the conduction and valence bands intersect at distinct points on the Brillouin zone (Weyl points), which act as monopoles of Berry curvature in momentum space. This nontrivial band topology, identified from electronic structure calculations, gives rise to various exotic magneto-transport properties. Hybrid functional calculations that incorporate a portion of exact exchange, magneto-transport measurements, and temperature-dependent resistivity confirm nontrivial band topology and half-metallicity in CoS2 of magnetic ordering temperature TC≈120 K. However, electronic structure calculations also show that application of small strain transforms this half metallic character to the metallic. Interestingly, the magnetoresistance (MR) of the CoS2 films is characterized by a reentrant weak localization above a critical field at T≤60K and a negative to positive transition in MR as the T goes from <TC to >TC. Experimental observation of anomalous Hall resistivity and ab initio computed band structure, Berry curvature, and Hall conductivity (σxy) demonstrate that the σxy in CoS2 is primarily driven by the intrinsic Karplus-Luttinger contribution, often linked to Berry phase physics.
One promising approach to combat the rapidly escalating computational demands is to use networks of naturally stochastic units called probabilistic bits (p-bits). To date, hardware implementations of p-bits have predominantly relied on thermally unstable nanomagnets. However, the search continues for alternative material platforms exhibiting easily accessible, intrinsic forms of stochasticity. In this work, we demonstrate hitherto unreported p-bit functionality in epitaxial thin films of La0.67Sr0.33MnO3, a material showing an electrically triggered metal-insulator transition, grown on twin-textured LaAlO3 substrates. By leveraging the combined effects of phase and structural inhomogeneities, we show two distinct modes of voltage-tunable stochastic operation: clocked binary switching and unclocked multi-bit switching. Our findings suggest that the differences result from variations in the energy landscape near the phase transition. This tunability of the energy landscape is promising for designing diverse stochastic behavior within the same material, highlighting its potential for applications in true random number generation for cryptography and probabilistic computing.
A method for modeling the full steady-state and small-signal behavior of practical capacitive structures, such as metal-insulator-metal capacitors, diodes, and transistors, is presented. Simple lumped element models fail to properly represent the behavior of most practical structures, resulting in incorrect electronic material property extraction and evaluation. The methodology and model presented in this paper properly characterizes practical structures and can be employed to more accurately understand and evaluate experimental results, extract various electronic and dielectric properties of the constituent materials, and predict possible behavior of new structures and materials. The impact of dielectric properties (e.g., real versus complex permittivity, conductance, Cole-Cole dielectric response) and geometry on observed behavior of practical structures, especially with regard to extracting correct property values, is discussed.
Vitrimer is an emerging class of sustainable polymers with self-healing capabilities enabled by dynamic covalent adaptive networks. However, their limited molecular diversity constrains their property space and potential applications. Recent development in machine learning (ML) techniques accelerates polymer design by predicting properties and virtually screening candidates, yet the scarcity of available experimental vitrimer data poses challenges in training ML models. To address this, we leverage molecular dynamics (MD) data generated by our previous work to train and benchmark seven ML models covering six feature representations for glass transition temperature (Tg) prediction. By averaging predicted Tg from different models, the model ensemble approach outperforms individual models, allowing for accurate and efficient property prediction on unlabeled datasets. Two novel vitrimers are identified and synthesized, exhibiting experimentally validated higher Tg than existing bifunctional transesterification vitrimers, along with demonstrated healability. This work explores the possibility of using MD data to train ML models in the absence of sufficient experimental data, enabling the discovery of novel, synthesizable polymer chemistries with superior properties. The integrated MD-ML approach offers polymer chemists an efficient tool for designing polymers tailored to diverse applications.
We have investigated the electronic, vibrational, optical, thermal and piezoelectric properties of LiNbO3, LiTaO3 and Li2NbTaO6 using the first-principles calculation based on the density functional theory. It also shows structural phase transition below Tc due to ionic displacement that may alter the properties of material. We have checked the structural stability by calculating the tolerance factor and formation energy before proceeding to the further calculations. The ground state electronic band structures and corresponding density of states show its semiconducting nature with a band gap range of 3.5-3.7 eV. Optical properties such as dielectric function, absorption coefficient, optical conductivity, refractive index, absorbance and reflectance are calculated using time-dependent density functional theory. Furthermore, the piezoelectric properties and Born effective charges were analyzed to find the correlation between them. In these materials, the distortion induced by the small ionic radius of Li+ coupled with strong covalent interaction between transition metal and oxygen leads to high spontaneous polarization which can enhance both piezoelectric and optical properties.
We investigate the mobility of structural defects, adatoms, and defect-adatom combinations in self-supporting graphene subjected to keV ion irradiation. In the first scenario, homogeneous irradiation using 20 keV Ar+ ions at a dose of 3×1014 ions/cm2 induces tensile strain of up to 0.8\%. This strain diminishes with increasing defect density at the dose of 5×1014 ions/cm2, indicating a strain-relaxation mechanism. Contrary to the expected localized behavior, vacancies exhibit long-range interactions, contributing to global strain effects across the lattice. In the second scenario, by employing a nanopore mask, we spatially confined defect generation to periodically aligned circular regions surrounded by non-irradiated material, enabling direct observation of vacancy and adatom dynamics. Selected area electron diffraction (SAED) reveals significant structural damage in areas adjacent to the irradiated regions, suggesting that single vacancies migrate over distances on the order of 100 nm from irradiated to non-irradiated zones even at room temperature. The build-up of lattice strain observed in this study may play a key role in lowering the migration barrier of single vacancies, thereby facilitating their diffusion into pristine lattice regions. Furthermore, the findings highlight the role of pre-existing surface contaminants in preserving lattice integrity through a self-healing mechanism, where adatom-induced lattice reconstruction mitigates defect-induced structural degradation.