2024-11-01 | | Total: 27

We present an energy-specific Bethe-Salpeter equation (BSE) implementation for efficient core and valence optical spectrum calculations. In energy-specific BSE, high-lying excitation energies are obtained by constructing trial vectors and expanding the subspace targeting excitation energies above the predefined energy threshold in the Davidson algorithm. To calculate optical spectra over a wide energy range, energy-specific BSE can be applied to multiple consecutive small energy windows, where trial vectors for each subsequent energy window are made orthogonal to the subspace of preceding windows to accelerate the convergence of the Davidson algorithm. For seven small molecules, energy-specific BSE combined with $G_0W_0$ provides small errors around 0.8 eV for absolute and relative $K$-edge excitation energies when starting from a hybrid PBEh solution with 45\% exact exchange. We further showcase the computational efficiency of this approach by simulating the N $1s$ $K$-edge excitation spectrum of the porphine molecule and the valence optical spectrum of silicon nanoclusters involving 5,000 excited states using $G_0W_0$-BSE. This work expands the applicability of the $GW$-BSE formalism for investigating high-energy excited states of large systems.

The water/electrode interface under an applied bias potential is a challenging out-of-equilibrium phenomenon, which is difficult to accurately model at the atomic scale. In this study, we employ a combined approach of Density Functional Theory (DFT) and non-equilibrium Green's function (NEGF) methods to analyze the influence of an external bias on the properties of water adsorbed on Au(111) and Pd(111) metallic electrodes. Our results demonstrate that while both Au and Pd-electrodes induce qualitatively similar structural responses in adsorbed water molecules, the quantitative differences are substantial, driven by the distinct nature of water-metal bonding. Our findings underscore the necessity of quantum-mechanical modeling for accurately describing electrochemical interfaces.

The rapid validation of newly predicted materials through autonomous synthesis requires real-time adaptive control methods that exploit physics knowledge, a capability that is lacking in most systems. Here, we demonstrate an approach to enable the real-time control of thin film synthesis by combining in situ optical diagnostics with a Bayesian state estimation method. We developed a physical model for film growth and applied the Direct Filter (DF) method for real-time estimation of nucleation and growth rates during pulsed laser deposition (PLD) of transition metal dichalcogenides. We validated the approach on simulated and previously acquired reflectivity data for WSe$_2$ growth and ultimately deployed the algorithm on an autonomous PLD system during growth of 1T$^\prime$-MoTe$_2$ under various synthesis conditions. We found that the DF robustly estimates growth parameters in real-time at early stages of growth, down to 15% percent monolayer area coverage. This approach opens new opportunities for adaptive film growth control based on a fusion of in situ diagnostics, modern data assimilation methods, and physical models which promises to enable control of synthesis trajectories towards desired material states.

A theoretical model for the recently discovered effect of all-optical photoswitching in lead tribromide perovskite single microcrystals is proposed. The model takes into account the spatially distributed kinetics of the charge carrier recombination and the creation/destruction of trap states. It successfully reproduces the key features of the photoswitching phenomenon.

Spin-polarized two-dimensional electron gases (2DEGs) are of particular interest for functional oxide electronics applications. The redox-created 2DEG residing on the strontium titanate, SrTiO$_3$ (STO), side of a europium monoxide (EuO)/SrTiO$_3$ (001) interface is expected to be significantly spin-polarized due to the proximity to the strong ($7\,\mu_B/f.u.$) Heisenberg ferromagnet EuO. We apply magnetic circular dichroism in the angular distribution (MCDAD) of photoemitted electrons to investigate whether and how the induced spin polarization of the 2DEG depends on the dimensionality of the overlaying EuO layer. The experimental data are complemented by density functional theory calculations with Hubbard $U$ term (DFT+$U$). We show that the EuO/STO interfacial 2DEG is spin-polarized even for ultrathin EuO overlayers, starting at an EuO threshold thickness of only two monolayers. Additional EuO monolayers even increase the induced magnetic Ti moment and thus the spin polarization of the 2DEG. Our results and the potential to enhance the magnetic order of EuO by other proximity effects [1] indicate that the EuO/STO (001) interface is an ideal template for creating (multi-)functional spin-polarized 2DEGs for application in oxide electronics.

The Raman active G mode in graphene exhibits strong coupling to electrons, yet the comprehensive treatment of this interaction in the calculation of its temperature-dependent Raman spectrum remains incomplete. In this study, we calculate the temperature dependence of the G mode frequency and linewidth, and successfully explain the experimental trend, by accounting for the contributions arising from the first-order electron-phonon coupling, electron-mediated phonon-phonon coupling, and standard lattice anharmonicity. The generality of our approach enables its broad applicability to study phonon dynamics in materials where both electron-phonon coupling and anharmonicity are important.

The steady-state distribution of carrier concentrations in a solar cell under operating conditions is a key source of carrier recombination and directly influences the output current density. In this study, we investigated the effects of illumination and bias voltage on the steady-state distributions of carrier concentrations and recombination rates in a homo-pn junction solar cell using one-dimensional numerical simulations to explore passivation strategies driven by the reduction of carrier concentrations. Simulations under open circuit conditions revealed that controlling the standard states of carriers can enhance the open circuit voltage without changing the carrier concentration. Furthermore, distributing recombination rates conventionally concentrated in the vicinity of the interface into the bulk region, such as within the absorbing layer, improves the open circuit voltage. Our results also showed that changing the carrier distribution in the dark to that under illumination, in other words, transition from an equilibrium to a steady state, is governed by drift rather than diffusion. This means that the electric field, which induces drift, is a primary driving force for carrier separation. Consequently, by optimizing the electric field distribution depending on properties of recombination-causing defects, a higher short circuit current density can be achieved, even without chemical passivation of defects. This work offers fundamental insights into reduction of steady-state recombination rates through precise control of carrier concentration, chemical potential, and electric field distributions.

In response to the growing demand for more efficient and compact refrigeration and energy conversion devices, electrocaloric poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) is among the most promising active substances. However, despite its high electrocaloric response, the maximum efficiency achievable over a cooling cycle is hampered by losses. To overcome this major limitation, losses have been reduced by using an electrothermal poling treatment as well as by controlling the surface roughness. The upper bound of the efficiency computed over a thermodynamic cycle mimicking the working conditions of an actual cooling device is increased from 1% to 10% of the Carnot efficiency. This represents a major improvement in enhancing ferroelectric materials for advanced energy applications.

We perform molecular dynamics simulations of molten Lithium Fluoride using the MACE-MP-0 (small) machine learnt interatomic potential and the classical Buckingham and Born-Huggins-Mayer potentials. We find that the MACE-MP-0, out-of-the-box, is able to accurately reproduce the experimental viscosity across the liquid state. Whilst the previous predicted viscosities from classical potentials are under-predicted, which has previously been attributed to a suppressed melting temperature. We find that the melting temperature simulated by MACE-MP-0, simply by heating a crystal structure, is significantly closer to the experimental melting temperature of LiF.

Spin chirality in antiferromagnets offers new opportunities for spintronics. The kagome antiferromagnet Mn3Sn is a paradigmatic material in which the antiferromagnetic order parameter can be detected and controlled by electrical means. However, direct investigation of the magnetic texture of Mn3Sn has been challenging because of the tiny moment hosted in its magnetic octupole, hindering further clarification of this unique material. Here, we address this issue by observing the stray magnetic field from Mn3Sn using a diamond quantum scanning magnetometer. The spatially-resolved intrinsic domains and domain walls in a high-quality single-crystalline Mn3Sn film quantitatively reveal the polarization angle of the magnetic octupole in the kagome plane, the domain's local magnetization, the domain wall's width and chirality, and the octupole order in domain walls. Our nanoscale investigation of Mn3Sn, a powerful complement to macroscopic measurements, paves the road for developing chiral antiferromagnetism and its potential for spintronic applications.

Poly 3,4-ethylenedioxythiophene (PEDOT) has been attracting attention as a thermoelectric material for room-temperature use due to its flexibility and non-toxicity. However, PEDOT reportedly generates insufficient thermoelectric power for practical use. This work tried to improve the Seebeck coefficient by introducing molecular strain to PEDOT molecules by loading a Polystyrene sulfonate (PSS)-free PEDOT on a Polyethyleneterephthalate (PET) fiber. Raman spectroscopy revealed the PEDOT materials with significant compression in the C{\alpha}-C{\alpha} bond and extension in the C{\alpha}=C\b{eta} bond exhibit Seebeck coefficients two orders of magnitude larger than usual. Furthermore, strain in the C\b{eta}-C\b{eta} bond strongly correlated with the Seebeck coefficient that varied in a broad range from -2100 to 3300 {\mu}V K-1. This variation indicated that the molecular strain formed a sharp peak or valley around the Fermi level in the density of state (DOS) function, which gradually shifts along with the C\b{eta}-C\b{eta} strain. This molecular strain-induced giant Seebeck effect is expected to be an applicable technique for other polythiophene molecules.

Chiral and axial materials offer platforms for intriguing phenomena, such as cross-correlated responses and chirality-induced spin selectivity. However, quantifying the properties of such materials has generally been considered challenging. Here, we demonstrate that the spatial distribution of the electron chirality, represented by $\Psi^\dagger \gamma^5 \Psi$ with the four-component Dirac field $\Psi$, characterizes the chirality and axiality of materials. Furthermore, we reveal that spin-derived electric polarization can serve as an effective indicator of material polarity. We present quantitative evaluations of electron chirality distribution and spin-derived electric polarization based on first-principles calculations. Additionally, we propose that electron chirality can be directly observed via circular dichroism in photoemission spectroscopy, which measures the difference between right- and left-handed circularly polarized light. Electron chirality and spin-derived electric polarization provide a new framework for quantifying chirality, axiality, and polarity in asymmetric materials, paving the way for the exploration of novel functional materials.

Altermagnets, magnetic materials with zero magnetization and spin-split band structure, have gained tremendous attention recently for their rich physics and potential applications. Here, we report on a microscopic tight-binding model that unveils a unique coupling between orbitals and spins in $d$-wave altermagnets which gives rise to momentum-dependent and spin-selective optical absorption. This coupling promotes the controlled optical excitation of up or down spins depending on the polarization direction of linearly polarized light. Such an effect originates from the coupling of orbitals to the sublattice degree of freedom through the crystal field, which is then coupled to spins through the antiferromagnetic interaction. Our crystal field analysis, which is general to any type of altermagnet, helps understand the onset of altermagnetism from a microscopic point of view, and we use our results to propose clear magneto-optical signatures of our predictions. Our findings shine light on the interplay between orbitals and spins in altermagnets, thus paving the way towards novel orbitronic and opto-spintronic devices.

Scanning Electron Microscopy (SEM) is a widely used tool for nanoparticle characterization, but long-term directional drift can compromise image quality. We present a novel algorithm for post-imaging drift correction in SEM nanoparticle imaging. Our approach combines multiple rapidly acquired, noisy images to produce a single high-quality overlay through redundant cross-correlation, preventing drift-induced distortions. The preservation of critical geometrical properties and accurate imaging of surface features were verified using Atomic Force Microscopy. On platinum nanoparticles with diameters of 300 to 1000 nm, significant improvements in the mean-based signal-to-noise ratio (SNR) were achieved, increasing from 4.4 dB in single images to 11.3 dB when overlaying five images. This method offers a valuable tool for enhancing SEM image quality in nanoparticle research and metrology, particularly in settings without specialized hardware-based drift correction.

The behavior of a Fermi gas across various dimensions has already been extensively explored. However, existing formulations often lack clarity or exhibit inconsistencies. In this work, we present a streamlined approach for deriving the density of states (DOS) for a $d$-dimensional Fermi gas for semiconductors. We provide explicit general expressions for key Fermi quantities, including the wavevector, energy, temperature, momentum, wavelength, and velocity. Moreover, we apply these expressions to calculate for the carrier concentration and thermodynamic properties such as the internal energy, chemical potential, specific heat, electron degeneracy pressure, and bulk modulus. From the degeneracy pressure, we attribute a purely quantum mechanical explanation for the enhancement of carrier concentration in lower dimensions.

The standard understanding of topological protection from band theory is that a system's topology cannot change without first closing the bulk band gap. However, in Floquet systems, this typical definition of topological protection is one step removed from the experimentally accessible system parameters, as the relationship between the disorder in a system's instantaneous Hamiltonian and its Floquet Hamiltonian that defines its topology is not straightforward. Here, we demonstrate that the spectral localizer framework for classifying material topology can be applied to Floquet systems and prove that its associated measure of topological protection can be understood in terms of the integrated disorder across the system's instantaneous Hamiltonians. As such, we have derived a quantitative bound on a Floquet system's topological protection in terms of the instantaneous system. Moreover, we show the utility of these bounds in both ordinary an anomalous Floquet Chern insulators.

In this study, we address damage initiation and micro-crack formation in ductile failure of polycrystalline metals. We show how our recently published thermodynamic framework for ductile phase-field fracture of single crystals can be extended to polycyrstalline structures. A key feature of this framework is that is accounts for size effects by adopting gradient-enhanced (crystal) plasticity. Gradient-enhanced plasticity requires the definition of boundary conditions representing the plastic slip transmission resistance of the boundaries. In this work, we propose a novel type of micro-flexible boundary condition for gradient-plasticity, which couples the slip transmission resistance with the phase-field damage such that the resistance locally changes during the fracturing process. The formulation permits to maintain the effect of grain boundaries as obstacles for plastic slip during plastification, while also accounting for weakening of their resistance during the softening phase. In numerical experiments, the new damage-dependent boundary condition is compared to classical micro-free and micro-hard boundary conditions in polycrystals and it is demonstrated that it indeed produces a response that transitions from micro-hard to micro-free as the material fails. We show that the formulation maintains resistance to slip transmission during hardening, but can generate micro-cracks across grain boundaries during the fracture process. We further show examples of how the model can be used to simulate void coalescence and three-dimensional crack fronts in polycrystals.

The wave-like nature of electrons is evident from quantum interference effects observed during the photoemission process. When there are different nuclei in the unit cell of a crystal and/or structural distortions, photo-electron wavefunctions can interfere, giving rise to peculiar intensity modulation of the spectrum, which can also hide energy states in a photoemission experiment. The 2H phase of transition metal dichalcogenides, with two nonequivalent layers per unit cell and charge density wave distortion, is an optimal platform for such effects to be observed. Here, we discover undetectable states in 2H-TaS2, interpreting high-resolution angular resolved photoemission spectroscopy considering interference effects of the correlated electron wave functions. In addition, phase mismatching induced by the charge density wave distortion, results in evident signature of the phase transition in the photoemission spectrum. Our results highlight the importance of quantum interference, electronic correlations and structural distortion to understand the physics of layered materials.

On-surface chemistry has emerged as a key technique for designing novel low-dimensional materials, enabling precise manipulation of their electronic and magnetic properties at the atomic scale. It also proves highly effective for the fabrication of heterostructures. Leveraging these benefits, herein, we perform a first principles study of the magnetic proximity effect (MPE) in a heterostructure formed by a monolayer of the two-dimensional carbon allotrope biphenylene network (BPN) deposited on the surface of the above-room-temperature ferrimagnet yttrium iron garnet (YIG). Our results reveal strong hybridization between BPN orbitals and YIG surface states, resulting in non-homogeneous electron transfer and robust MPE. The proposed methodology accurately describes YIG magnetic interactions, allowing us to study the tuning effects of BPN on the magnetic properties of the substrate for the first time. Additionally, we explore the impact of van der Waals (vdW) distance at the interface, finding enhanced spin splitting up to 30% under external pressure. These findings highlight a promising strategy for inducing spin polarization in BPN without chemical modifications, opening new possibilities for BPN-based spintronic devices through the creation of heterostructures with magnetic materials.

The concept of periodic structures has driven the development of advanced materials like photonic and phononic crystals. These metamaterials typically rely on complex repeating units or meta-atoms, limiting their adaptability after fabrication. To overcome this limitation, we introduce the concept of metafields, which are repeating patterns of local magnetic fields instead of material structures. Unlike metamaterials, which consist of atoms arranged in structured patterns, metafields focus on the patterns of fields alone, allowing for dynamic property adjustments through external electric currents. This study explores a specific metafield where the repeating pattern is the magnetic disk (MD), defined by a uniform magnetic field perpendicular to its surface. By arranging multiple MDs, we form a magnetic disk array (MDA) and theoretically investigate the charged particle dynamics within this array. Our analysis highlights Hall transport phenomena, such as Hall diffusivity, conductivity, and thermal Hall effects. Using complex variables, we derive the collision integral and Boltzmann equation for particle distribution, applying perturbation methods and Fourier analysis to calculate transport coefficients. Simulations reveal a one-way preferential diffusion at the interface between MDAs with opposing field directions, where diffusion intensity varies with the particle movement direction. This highlights metafields' potential for dynamic particle control applications.

Kagome materials are known to be an ideal platform that hosts a plethora of interesting phases such as topological states, electronic correlation, and magnetism, owing to their unique band structure and geometry. We report magnetotransport measurement in Kagome metal Yb$_{0.5}$Co_3Ge$_3$ as a function of pressure. Below $\sim25^\circ$ K the temperature dependence of resistance shows an upturn that is accompanied by a strong negative magnetoresistance, which could be attributed to Kondo effect. Upon pressurization above 1 GPa the resistance shows a reduction as a function of temperature below $4^\circ$ K, along with a further enhanced negative magnetoresistance. This might indicate an onset of a pressure-induced Kondo coherence effect.

We present the first calculations of the inelastic part of the dynamical structure factor (DSF) for warm dense matter (WDM) using Time-Dependent Orbital-Free Density Functional Theory (TD-OF-DFT) and Mixed-Stochastic-Deterministic (mixed) Kohn Sham TD-DFT (KS TD-DFT). WDM is an intermediate phase of matter found in planetary cores and laser-driven experiments, where the accurate calculation of the DSF is critical for interpreting X-ray Thomson scattering (XRTS) measurements. Traditional TD-DFT methods, while highly accurate, are computationally expensive, motivating the exploration of TD-OF-DFT and mixed TD-KS-DFT as more efficient alternatives. We applied these methods to experimentally measured WDM systems, including solid-density aluminum and beryllium, compressed beryllium, and carbon-hydrogen mixtures. Our results show that TD-OF-DFT requires a dynamical kinetic energy potential in order to qualitatively capture the plasmon response. Additionally, it struggles with capturing bound electron contributions and accurately modeling plasmon dynamics without the inclusion of a dynamic kinetic energy potential. In contrast, mixed TD-KS-DFT offers greater accuracy in distinguishing bound and free electron effects, aligning well with experimental data, though at a higher computational cost. This study highlights the trade-offs between computational efficiency and accuracy, demonstrating that TD-OF-DFT remains a valuable tool for rapid scans of parameter space, while mixed TD-KS-DFT should be preferred for high-fidelity simulations. Our findings provide insight into the future development of DFT methods for WDM and suggest potential improvements for TD-OF-DFT.

We revisit the prevailing notion that spontaneous and piezoelectric polarization fields are inherently detrimental to light emission in polar semiconductor heterostructures. Here, we demonstrate that polarization can enhance light-matter coupling in quantum wells through the quantum-confined Stark effect, by enabling a reduction in well width without shifting the emission to shorter wavelengths. We illustrate this with the paradigmatic example of red-emitting (644 nm-698 nm) AlInGaN heterostructures, which are essential for achieving polychromatic micron-scale pixels. By systematically exploring their design space with machine learning, we uncover that the globally optimal designs feature extreme internal electric fields exceeding 8 MV/cm. Structural and compositional engineering of electric fields not only offers precise control over the emission wavelength but also boosts the light-emission probability by orders of magnitude.

We extend the previously published model that distinguishes between the diffusive motion of diamagnetic muons and the dynamics of ions around the muon in matter, and propose a generalized model for {\sl paramagnetic muons} (Mu$^0$s, bound states of a muon and an unpaired electron) observed in non-metallic host materials. The new model distinguishes among the independent motion of unpaired electron associated with Mu$^0$, the self-diffusive motion of Mu$^0$ as single atomic entity, and that of the ions surrounding Mu$^0$, where the muon spin relaxation is induced by dynamical fluctuations of the hyperfine (HF) field exerted from the unpaired electron (e.g., due to spin/charge exchange reaction) and/or that of the nuclear hyperfine (NHF) interactions between the unpaired electron and the surrounding ions. We have applied this model to the muonated radicals (Mu$^0$s in a polaron state) in conducting polymers, and examined the validity of the interpretations claimed in the earlier literature that the spin relaxation is induced by quasi-one dimensional motion of the unpaired electron. The result suggests that experimental support for such a claim is still inadequate and needs to be reexamined, including the possibility of other origins for the fluctuations. It is expected that our model will prove a useful guide for $\mu$SR studies of various local dynamics involving paramagnetic muon states.

The discovery of the unusual magnetoresistance (UMR) during the rotation of magnetization in the plane perpendicular to the electric current, which has been typically attributed to magnetization-dependent interfacial reflection of spin current, has brought remarkable impacts on the understanding and application of a variety of spintronic phenomena. Here, we report that giant UMR occurs also in single-layer magnetic metals and exhibits high-order contributions and a universal sum rule, which agree well with the physics origin of the recently proposed two-vector magnetoresistance that simply considers electron scattering by the magnetization vector and interfacial electric field, without the need for any relevance to spin current. Revisiting of the literature data reveals that the most representative data that were used to claim spin Hall magnetoresistance or other magnetoresistances related or unrelated to spin current can be understood unifiedly by the two-vector MR theory. Experimental and theoretical results against spin-current-related magnetoresistances, but not the two-vector magnetoresistance, are discussed.