2025-05-09 | | Total: 32
Understanding and controlling the charge density wave (CDW) phase diagram of transition metal dichalcogenides is a long-studied problem in condensed matter physics. However, due to complex involvement of electron and lattice degrees of freedom and pronounced anharmonicity, theoretical simulations of the CDW phase diagram at the density-functional-theory level are often numerically demanding. To reduce the computational cost of first principles modelling by orders of magnitude, we have developed an electronic free energy machine learning model for monolayer NbSe2 that allows changing both electronic and ionic temperatures independently. Our approach relies on a machine learning model of the electronic density of states and zero-temperature interatomic potential. This allows us to explore the CDW phase diagram of monolayer NbSe2 both under thermal and laser-induced nonthermal conditions. Our study provides an accurate estimate of the CDW transition temperature at low cost and can disentangle the role of hot electrons and phonons in nonthermal ultrafast melting process of the CDW phase in NbSe2.
In this work, the effect of anti-site disorder on magnetic, electrical resistivity, transverse magnetoresistance MR, and anomalous Hall resistivity of off-stoichiometric CFTS Heusler alloy thin films, with a particular focus on martensitic phase transformation and spin gapless semiconductor SGS-like behavior, is investigated. These thin films were grown on Si (100) substrate at different substrate temperatures, TS, ranging from 200 C to 550 C using magnetron sputtering, enabling control over the degree of anti-site atomic ordering from disordered A2 to ordered L21. All the films, irrespective of their disorder, exhibit a distinct thermal hysteresis and significant drop in resistivity, crossover from asymmetric to symmetric magnetoresistance, and a sharp increase in MR around 300 K, confirming the occurrence of a thermo-elastic martensitic phase transformation. Detailed analysis of resistivity data indicates that for TS200 and TS350 films, a SGS based two channel model describes the conductivity in the martensite phase, whereas TS450, TS500, and TS550 films, exhibit a usual metallic behavior with a resistivity minimum at low temperatures. All the CFTS films show soft ferromagnetic nature and follow the spin-wave equation up to 390 K. The saturation magnetization and Hall conductivity increase with increasing crystalline order. The scaling relation between the longitudinal resistivity and the anomalous Hall resistivity in the martensite phase revels that skew scattering is the dominating contribution in disordered films, and a change in charge carrier type from hole to electron around the martensitic transformation temperature. The asymmetric MR, persistent up to room temperature, highlights the potential of these films for spintronic applications such as spin valves.
Grain growth simulation is crucial for predicting metallic material microstructure evolution during annealing and resulting final mechanical properties, but traditional partial differential equation-based methods are computationally expensive, creating bottlenecks in materials design and manufacturing. In this work, we introduce a machine learning framework that combines a Convolutional Long Short-Term Memory networks with an Autoencoder to efficiently predict grain growth evolution. Our approach captures both spatial and temporal aspects of grain evolution while encoding high-dimensional grain structure data into a compact latent space for pattern learning, enhanced by a novel composite loss function combining Mean Squared Error, Structural Similarity Index Measurement, and Boundary Preservation to maintain structural integrity of grain boundary topology of the prediction. Results demonstrated that our machine learning approach accelerates grain growth prediction by up to \SI{89}{\times} faster, reducing computation time from \SI{10}{\minute} to approximately \SI{10}{\second} while maintaining high-fidelity predictions. The best model (S-30-30) achieving a structural similarity score of \SI{86.71}{\percent} and mean grain size error of just \SI{0.07}{\percent}. All models accurately captured grain boundary topology, morphology, and size distributions. This approach enables rapid microstructural prediction for applications where conventional simulations are prohibitively time-consuming, potentially accelerating innovation in materials science and manufacturing.
The interplay between magnetic ordering and band topology has emerged as a fertile ground for discovering novel quantum states with profound implications for fundamental physics and next-generation electronics. Here, we theoretically predict a new type-III Weyl semi-half-metal (SHM) state in monolayer Li2N, uniquely combining magnetic half-metallicity and type-III Weyl semimetal characteristics. First-principles calculations reveal a fully spin-polarized and critically tilted Weyl cone around the Fermi level in monolayer Li2N, driven by p-orbital ferromagnetism. This arises from the symmetry-protected band crossing between a flat valence band and a highly dispersive conduction band, leading to type-III Weyl fermions with strong transport anisotropy. A low-energy k⋅p Hamiltonian is constructed and corresponding nontrivial edge states are uncovered to capture the topological nature of Li2N. Notably, this Weyl SHM phase remains robust under biaxial strain ranging from -2% to 4%, with an ideal type-III Weyl fermion emerging alongside a line-like ergodic surface emerging at 3.7% strain, offering a promising platform for exploring correlated electronic phenomena. Our results establish Li2N as a viable candidate for realizing exotic type-III Weyl SHM states and open a new avenue for exploring the intricate interplay among magnetism, topology, and flat-band physics.
Polaritons are quantum mechanical superpositions of photon states with elementary excitations in molecules and solids. The light-matter admixture causes a characteristic frequency-momentum dispersion shared by all polaritons irrespective of the microscopic nature of material excitations that could entail charge, spin, lattice or orbital effects. Polaritons retain the strong nonlinearities of their matter component and simultaneously inherit ray-like propagation of light. Polaritons prompt new properties, enable new opportunities for spectroscopy/imaging, empower quantum simulations and give rise to new forms of synthetic quantum matter. Here, we review the emergent effects rooted in polaritonic quasiparticles in a wide variety of their physical implementations. We present a broad portfolio of the physical platforms and phenomena of what we term polaritonic quantum matter. We discuss the unifying aspects of polaritons across different platforms and physical implementations and focus on recent developments in: polaritonic imaging, cavity electrodynamics and cavity materials engineering, topology and nonlinearities, as well as quantum polaritonics.
Vivianite (Fe3(PO4)28H2O) is a naturally occurring layered material with significant environmental and technological relevance. This work presents a comprehensive theoretical investigation of its two-dimensional (2D) counterpart, Vivianene, focusing on its structural, electronic, and optical properties. Using density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) simulations, we evaluate its thermodynamic stability, band structure, density of states, and optical response. Our results confirm that Vivianene retains the main structural features of bulk Vivianite while exhibiting enhanced thermodynamic stability at room temperature. The electronic structure analysis reveals an indirect bandgap of 3.03 eV for Vivianene, which is slightly lower than the 3.21 eV observed for bulk Vivianite, deviating from the expected quantum confinement trend in 2D materials. The projected density of states (PDOS) analysis indicates that Fe d orbitals predominantly contribute to the valence and conduction bands. Optical calculations demonstrate that Vivianene exhibits a higher optical band gap (3.6 eV) than bulk Vivianite (3.2 eV), with significant absorption in the ultraviolet region. The refractive index and reflectivity analyses suggest that most of the incident light is absorbed rather than reflected, reinforcing its potential for optoelectronic applications. These findings provide valuable insights into the fundamental properties of Vivianene and highlight its potential for advanced applications in sensing, optoelectronics, and energy-related technologies.
The atomic structures at epitaxial film-substrate interfaces determine scalability of thin films and can result in new phenomena. However, it is challenging to control the interfacial structures since they are decided by the most stable atomic bonding. In this work, we report strong tunability of the epitaxial interface of improper ferroelectric hexagonal ferrites deposited on spinel ferrites. The selection of two interface types, related by a 90 deg rotation of in-plane epitaxial relations and featured by disordered and hybridized reconstructions respectively, can be achieved by growth conditions, stacking sequences, and spinel compositions. While the disordered type suppresses the primary K3 structure distortion and ferroelectricity in hexagonal ferrites, the hybridized type is more coherent with the distortion with minimal suppression. This tunable interfacial structure provides critical insight on controlling interfacial clamping and may offer a solution for the long-standing problem of practical critical thickness in improper ferroelectrics.
Atomistic control of phase boundaries is crucial for optimizing the functional properties of solid-solution ferroelectrics, yet their microstructural mechanisms remain elusive. Here, we harness machine-learning-driven molecular dynamics to resolve the phase boundary behavior in the KNbO3-KTaO3 (KNTO) system. Our simulations reveal that chemical composition and ordering enable precise modulation of polymorphic phase boundaries (PPBs), offering a versatile pathway for materials engineering. Diffused PPBs and polar nano regions, predicted by our model, highly match with experiments, underscoring the fidelity of the machine-learning atomistic simulation. Crucially, we identify elastic and electrostatic mismatches between ferroelectric KNbO3 and paraelectric KTaO3 as the driving forces behind complex microstructural evolution. This work not only resolves the longstanding microstructural debate but also establishes a generalizable framework for phase boundary engineering toward next-generation high-performance ferroelectrics.
A single crystalline system typically stabilizes a unique state for spin ordering below a critical temperature. Certain materials exhibit multiple magnetic states, driven by structural phase transitions under varying thermodynamic conditions. Recently, van der Waals magnets have demonstrated subtle interlayer exchange interactions, offering a promising approach to electrically control spin states without structural transformation. Here, we report the emergence of three distinct magnetic states, ferromagnetic ordering and both collinear and non-collinear antiferromagnetic orderings, in a layered single crystalline magnet, cobalt-doped Fe3GaTe2 ((Co, Fe)3GaTe2). These three magnetic phases occur without structural phase transitions, a phenomenon we designate as polymorphic spin ordering in the material. The introduction of 16% Co-doping in Fe3GaTe2 modulates the interlayer magnetic interaction, enabling multiple spin orderings within the same lattice system with three critical temperatures: a Curie temperature for a ferromagnetic state (Tc=210 K) and two Neel temperatures for the collinear (TN1=110 K) and non-collinear (TN2=30 K) antiferromagnetic states. Our findings are supported by magnetic force microscopy, first-principles calculations, and circular dichroism angular photoemission spectroscopy, which reveals varying spin ordering and changes in the topological band structure and Berry curvature at different temperatures within the single-crystalline (Co, Fe)3GaTe2.
Anisotropic skyrmion Hall effect (A-SkHE) in two-dimensional (2D) magnetic systems represents a captivating phenomenon in condensed-matter physics and materials science. While conventional antiferromagnetic systems inherently suppress this effect through parity-time symmetry-mediated cancellation of Magnus forces acting on skyrmions, A-SkHE is primarily confined to ferromagnetic platforms. Here, we present a paradigm-shifting demonstration of this phenomenon in spin-splitting 2D antiferromagnets through the investigation of altermagnetic skyrmions. Combining comprehensive symmetry analysis with theoretical modeling, we elucidate the mechanism governing A-SkHE realization in 2D altermagnetic systems and establish a quantitative relationship between the transverse velocity of altermagnetic skyrmions and applied current orientation. Using first-principles calculations and micromagnetic simulations, this mechanism is further illustrated in a prototypical altermagnetic monolayer V2SeTeO. Crucially, we identify that the [C2C4zt] symmetry-protected anisotropic field serves as the critical stabilizer for maintaining the A-SkHE in this system. Our results greatly enrich the research on 2D altermagnetism and skyrmions.
The recently discovered kagome metal CsV3Sb5 exhibits a complex phase diagram that encompasses frustrated magnetism, topological charge density wave (CDW), and superconductivity. One CDW state that breaks time-reversal symmetry was proposed in this compound, while the exact nature of the putative magnetic state remains elusive. To examine the thermodynamic state of CsV3Sb5 and assess the character of the associated magnetism, we conducted tuning fork resonator measurements of magnetotropic susceptibility over a broad range of angles, magnetic fields, and temperature. We found a cascade of phase transition in the CDW phase. Of particular interest is a highly anisotropic magnetic structure that arises below about 30~K, with a magnetic moment along the c-axis that has an extremely small magnitude. This magnetic state demonstrates extremely slow dynamics and small saturate field, all suggest that electronic phase below 30~K breaks time reversal symmetry and has an unconventional origin.
The broadening in photoelectron spectra of polymers can be attributed to several factors, such as light source spread, spectrometer resolution, finite lifetime of the hole state, and solid-state effects. Here, for the first time, we set up a computational protocol to assess the peak broadening induced for both core and valence levels by solid-state effects in four amorphous polymers by using a combination of density functional theory, many-body perturbation theory, and classical polarizable embedding. We show that intrinsic local inhomogeneities in the electrostatic environment induce a Gaussian broadening of 0.2-0.7~eV in the binding energies of both core and semi-valence electrons, corresponding to a full width at half maximum (FWHM) of 0.5-1.7~eV for the investigated systems. The induced broadening is larger in acrylate- than in styrene- based polymers, revealing the crucial role of polar groups in controlling the roughness of the electrostatic landscape in the solid matrix.
The creation of atomically thin layers of non-exfoliable materials remains a crucial challenge, requiring the development of innovative techniques. Here, confinement epitaxy is exploited to realize two-dimensional gallium via intercalation in epitaxial graphene grown on silicon carbide. Novel superstructures arising from the interaction of gallenene (a monolayer of gallium) with graphene and the silicon carbide substrate are investigated. The coexistence of different gallenene phases, including b010-gallenene and the elusive high-pressure Ga(III) phase, is identified. This work sheds new light on the formation of two-dimensional gallium and provides a platform for investigating the exotic electronic and optical properties of confined gallenene.
Realizing room-temperature tunable skyrmionic objects in van der Waals ferromagnet offers unparalleled prospects for future spintronics. Here, we report an experimental investigation on the emergence and evolution of skyrmionic spin textures in the non-stoichiometric Fe3-xGaTe2 using magnetic force microscopy. The iron-deficiency-specific magnetic states of stripe, striped skyrmionium and striped skyrmion sack are observed. Through zero-field-cooling and field-cooling measurements, we observed distinct topological transitions and trivial transitions (distinguished by changes in topological charge) emerging during the stepwise evolution of topological spin textures, which enabled us to develop an evolution pathway model. Leveraging this model, the room-temperature stable composite topological spin textures of skyrmionium, skyrmion bag and sack states are further controllably realized via the exclusive topological-transition path (regulated by magnetic field and DMI intensity). Our work provides valuable insights into the room-temperature realization of topological spin textures in Fe3-xGaTe2, and inspires further exploration of their potential applications in heterostructure spintronics.
Atomic intercalation offers a powerful route for engineering two-dimensional (2D) materials by precisely tuning interlayer electronic coupling and spin configurations. Here, we propose a generic strategy for the construction of fully 2D magnetic tunnel junctions (MTJs) based on transition metal-intercalated graphene electrodes with h-BN barrier layer. First-principles calculations reveal that intercalation not only stabilizes uniform atomic dispersion via steric hindrance but also induces robust ferromagnetism in graphene. Manganese- and vanadium-intercalated systems (Mn-Gr and V-Gr) exhibit exceptional spintronic performance, with tunneling magnetoresistance (TMR) showing a pronounced odd-even oscillation as a function of barrier thickness. A giant TMR of 4.35×108% is achieved in the Mn-Gr system with a monolayer barrier h -BN (n=1), while V-Gr reaches a maximum TMR of 1.86×105% for a trilayer barrier (n=3). Moreover, biaxial strain further enhances the TMR to 109% and 107% in Mn-Gr and V-Gr systems, respectively. The devices also exhibit perfect spin filtering and pronounced negative differential resistance, offering new opportunities for high-performance spintronic and memory applications based on 2D van der Waals heterostructures.
Spontaneous orientation polarization (SOP) of polar molecules is formed in vacuum-deposited films. SOP is driven by asymmetric intermolecular interactions; however, the design of polar molecules for the improvement of dipole orientation is limited. In this study, we developed SOP molecules with high structural asymmetry by introducing multiple fluoroalkyl groups into a polar molecule. The developed polar molecules exhibited high dipole orientation degrees in vacuum-deposited films and achieved a high surface potential growth rate relative to the film thickness, over -350 mV nm-1, which is a record high for the reported compounds. The developed dipolar films can be used to generate rectification properties for the charge transport of organic films. The findings of this study provide methodologies for the formation of highly anisotropic glassy films, leading to improved performance of organic devices.
Optical spectra serve as a powerful tool for probing the interactions between materials and light, unveiling complex electronic structures such as flat bands and nontrivial topological features. These insights are crucial for the development and optimization of photonic devices, including solar cells, light-emitting diodes, and photodetectors, where understanding the electronic structure directly impacts device performance. Moreover, in anisotropic bulk materials, the optical responses are direction-dependent, and predicting those response tensors still remains computationally demanding due to its inherent complexity and the constraint from crystal symmetry. To address this challenge, we introduce the sequential tensorial properties equivariant neural network (StepENN), a graph neural network architecture that maps crystal structures directly to their full optical tensors across different photon frequencies. By encoding the isotropic sequential scalar components and anisotropic sequential tensor components into l=0 and l=2 spherical tensor components, StepENN ensures symmetry-aware sequential tensor predictions that are consistent with the inherent symmetry constraints of crystal systems. Trained on a dataset of frequency-dependent permittivity tensors for 1,432 bulk semiconductors computed from first-principles methods, our model achieves a mean absolute error (MAE) of 24.216 millifarads per meter (mF/m) on the predicted tensorial spectra with 85.7% of its predictions exhibiting less than 10% relative error, demonstrating its potential for deriving other spectrum-related properties, such as optical conductivity. This framework opens new avenues for the data-driven design of materials with engineered anisotropic optical responses, accelerating material advances in optoelectronic applications.
Two-dimensional (2D) carbon allotropes have attracted growing interest for their structural versatility and potential in energy storage and nanoelectronics. We propose Athos-Graphene (AG), a novel 2D carbon allotrope inspired by the geometric patterns of Brazilian artist Athos Bulcão. Designed using density functional theory, AG features a periodic structure with high thermodynamic and thermal stability, as evidenced by a low cohesive energy of -7.96 eV/atom, the absence of imaginary phonon modes, and robust performance in ab initio molecular dynamics simulations up to 1000 K. It exhibits anisotropic mechanical properties, with Young's modulus values of 585 GPa and 600 GPa along the x- and y-directions, and Poisson's ratios of 0.19 and 0.17, respectively. Electronic structure analyses confirm its metallic behavior, while optical studies reveal anisotropic absorption in the visible and UV regions. For lithium-ion storage, Athos-Graphene shows strong Li adsorption (-2.3 to -1.0 eV), a high theoretical capacity of 836.78 mAh/g, and a low average open-circuit voltage of 0.54 V. Lithium diffusion barriers are as low as 0.3 eV on the surface and 0.66 eV between layers, with a high diffusion coefficient greater than 6x10^-6 cm^2/s. These features highlight AG as a promising anode material for high-performance lithium-ion batteries.
The growing demand for efficient energy storage has driven the search for advanced anode materials for lithium- and sodium-ion batteries (LIBs and SIBs). In this context, we report the application of HOP-graphene (a 5-6-8-membered 2D carbon framework) as a high-performance anode material for LIBs and SIBs using density functional theory simulations. Diffusion studies reveal low energy barriers of 0.70 eV for Li and 0.39 eV for Na, indicating superior mobility at room temperature compared to other carbon allotropes, like graphite. Full lithiation and sodiation accommodate 24 Li and 22 Na atoms, respectively, delivering outstanding theoretical capacities of 1338 mAh/g (Li) and 1227 mAh/g (Na). Bader charge analysis and charge density difference maps confirm substantial electron transfer from the alkali metals to the substrate. Average open-circuit voltages of 0.42 V (Li) and 0.33 V (Na) suggest favorable electrochemical performance. HOP-graphene also demonstrates excellent mechanical strength. These findings position HOP-graphene as a promising candidate for next-generation LIB and SIB anodes.
\DeltaSCF with constrained occupations have been wildly used to investigate the excited-state and optical properties of defects. Recent studies have demonstrated that combining \DeltaSCF with hybrid functionals yields good accuracy in predicting defect properties. The Vienna Ab initio Simulation Package (\texttt{VASP}) is one of the most widely used quantum mechanical packages based on plane-wave methods. Despite the increasing application of \DeltaSCF as implemented in \texttt{VASP} for defect studies, detailed walkthroughs explaining how to conduct these calculations remain limited, making this approach a nontrivial task. Applying \DeltaSCF with hybrid functionals can present convergence challenges; worse, it may sometimes converge to incorrect excited states and can go largely unnoticed. This document aims to serve as a concise guide outlining what we think might be the appropriate approach for performing \DeltaSCF calculations in \texttt{VASP}. We benchmark this method by simulating excited states for a particularly challenging system: the neutral charge state of the silicon vacancy (SiV^0) defect in diamond. By highlighting potential pitfalls, we hope this document encourages further discussion within the community and assists researchers experiencing difficulties with this technique. The guidelines provided here are largely based on private discussions with Oscar Bulancea Lindvall from Linköping University and Chris Ciccarino from Stanford University.
Nitride materials, valued for their structural stability and exceptional physical properties, have garnered significant interest in both fundamental research and technological applications. The fabrication of high-quality nitride thin films is essential for advancing their use in microelectronics and spintronics. Yet, achieving single-crystal nitride thin films with excellent structural integrity remains a challenge. Here, we introduce a straightforward yet innovative metallic alloy nitridation technique for the synthesis of stable single-crystal nitride thin films. By subjecting metal alloy thin films to a controlled nitridation process, nitrogen atoms integrate into the lattice, driving structural transformations while preserving high epitaxial quality. Combining nanoscale magnetic imaging with a diamond nitrogen-vacancy (NV) probe, X-ray magnetic linear dichroism, and comprehensive transport measurements, we confirm that the nitridated films exhibit a robust antiferromagnetic character with a zero net magnetic moment. This work not only provides a refined and reproducible strategy for the fabrication of nitride thin films but also lays a robust foundation for exploring their burgeoning device applications.
The experimental observation of half-integer-quantized thermal Hall conductivity in the Kitaev candidate material \alpha-RuCl_3 has served as smoking-gun signature of non-Abelian anyons through an associated chiral Majorana edge mode. However, both the reproducibility of the quantized thermal Hall conductivity and the fundamental nature of the associated heat carriers, whether bosonic or fermionic, are subjects of ongoing and vigorous debate. In a recent theoretical work, it was proposed that varying the sample geometry through creating constrictions can distinguish between different origins of the thermal Hall effect in magnetic insulators. Here, we provide experimental evidence of chiral fermion edge modes by comparing the thermal Hall effect of a geometrically constricted \alpha-RuCl_3 sample with that of an unconstricted bulk sample. In contrast to the bulk crystals where the thermal Hall signal fades below 5\,K, the constricted crystals display a significant thermal Hall signal that remains measurable even at 2\,K. This sharp difference agrees well with the theoretical prediction and provides compelling evidence for the contribution of chiral fermion edge modes to the thermal Hall effect in \alpha-RuCl_3. More broadly, this work confirms that the geometry dependence of the thermal Hall effect can help identify chiral spin liquids in candidate materials like \alpha-RuCl_3 and paves the way for the experimental realization of thermal anyon interferometry.
We present BraWl, a Fortran package implementing a range of conventional and enhanced sampling algorithms for exploration of the phase space of the Bragg-Williams model, facilitating study of diffusional solid-solid transformations in binary and multicomponent alloys. These sampling algorithms include Metropolis-Hastings Monte Carlo, Wang-Landau sampling, and Nested Sampling. We demonstrate the capabilities of the package by applying it to some prototypical binary and multicomponent alloys, including high-entropy alloys.
The nonlinear optical responses of chiral phonons to terahertz and infrared light are studied using the nonlinear response theory. We show that the photo-induced angular momentum increases with the square of the chiral-phonon relaxation time \tau, giving a significantly larger angular momentum compared to ordinary phonons. We also find that the photo-induced Peltier effect by chiral phonons occurs through a mechanism distinct from those proposed recently; the induced energy current scales \propto\tau^2, giving a larger energy current in the clean limit. We prove a linear relation between the generated angular momentum and the energy current. Lastly, we show that the orbital current, an analog of the spin current, occurs through a nonlinear response. These findings demonstrate the unique properties and functionalities of chiral phonons.
We theoretically investigate the generation and Josephson current signatures of Floquet Majorana end modes (FMEMs) in a periodically driven altermagnet (AM) heterostructure. Considering a one-dimensional (1D) Rashba nanowire (RNW) proximitized to a regular s-wave superconductor and a d-wave AM, we generate both 0- and \pi-FMEMs by driving the nontopological phase of the static system. While the static counterpart hosts both topological Majorana zero modes (MZMs) and non-topological accidental zero modes (AZMs), the drive can gap out the static AZMs and generate robust \pi-FMEMs, termed as topological AZMs (TAZMs). We topologically characterize the emergent FMEMs via dynamical winding numbers exploiting chiral symmetry of the system. Moreover, we consider a periodically driven Josephson junction comprising of RNW/AM-based 1D topological superconduting setup. We identify the signature of MZMs and FMEMs utilizing 4\pi-periodic Josephson effect, distinguishing them from trivial AZMs exhibiting 2\pi-periodicty, in both static and driven platforms. This Josephson current signal due to Majorana modes survives even in presence of finite disorder. Our work establishes a route to realize and identify FMEMs in AM-based platforms through Floquet engineering and Josephson current response.