2026-09-30 | | Total: 59
Quaternary mixed-metal chalcohalides (MMCHs) are a promising mixed-anion semiconductor family, but their thermodynamic accessibility remains largely unexplored. We combine density functional theory with the Alexandria Materials Database to carry out a rapid and reliable evaluation of the thermodynamic accessibility of 54 M(II)$_2$M(III)Ch$_2$X$_3$ compounds. All evaluated MMCHs are predicted to be thermodynamically unstable, but a considerable fraction of MMCHs lie within computational uncertainty of the convex hull. Their predicted decomposition follows five distinct reaction pathways, most commonly into M(III)$_2$Ch$_3$, M(II)X$_2$, and M(II)Ch. Solution processing of six Sn-based MMCHs supports our analysis. Notably, this includes the first synthesis of the previously unreported Sn$_2$InS$_2$Br$_3$ in a multiphase film. Our approach identifies convex hull proximity and competing phase formation as key constraints on MMCH synthetic accessibility during solution processing, thereby guiding future MMCH exploration.
The kagome metal CsV$_3$Sb$_5$ exhibits charge density wave (CDW) and superconducting transitions, both of which are substantially affected by pressure. Recent x-ray diffraction experiments identify a new charge-ordered phase at a pressure coinciding with the dip of the superconducting dome. This CDW phase displays a distinctive wavevector $\mathbf{Q} = (3/8, 0, 1/2)$ and monoclinic symmetry, in contrast to the $2\times2\times 2$ and $2\times2\times 4$ orders reported at ambient pressure. In this letter, we show that density functional perturbation theory (DFPT) calculations on a fine reciprocal-space grid predict the leading lattice instability of CsV$_3$Sb$_5$ to be at this wavevector. Finite-displacement calculations reveal that while anharmonic effects stabilize the conventional $L_2^-$ CDW at ambient pressure, the competing $3/8$ instability becomes energetically favorable above $\sim$1 GPa, consistent with experimental observations. Interestingly, the nesting function displays a peak at the same wavevector. A Landau free energy analysis explains the emergence of the monoclinic distortion observed in x-ray diffraction, in addition to several bond-ordering patterns that may be relevant to the observed trends in the superconducting $T_c$.
A key objective in Weyl-semimetal (WSM) research is to identify phases built from minimal configurations of Weyl points (WPs), which provide the simplest settings for investigating the intrinsic physics of chiral topological charges. Pang et al. [Phys. Rev. Res. 8, 033304 (2026)] recently established that crystallographically realizable WSMs can be decomposed into linear combinations of 16 minimal "irreducible Weyl molecules" (IWMs). A fundamental question remains unresolved: which of these non-decomposable configurations can themselves form standalone crystalline phases? Here we introduce irreducible Weyl semimetals (IWSMs), in which two bands crossing near the Fermi level form an elementary symmetry-compatible complex whose complete Weyl-node configuration is charge neutral and crystallographically indivisible. Combining all 1651 magnetic space groups with Weyl-orbit multiplicities and band-compatibility relations, we classify IWSMs formed by crystalline-symmetry-protected twofold WPs. Only ten of the sixteen primitive inventories admit one-copy realizations, comprising four Pair, four Split, and two Mixed charge-node architectures. Remarkably, this classification uncovers five unconventional and previously unrecognized topological phases: the charge-three Pair IWSM {3, -3}; the Split IWSMs {3, -1, -1, -1}, and {4, -1, -1, -1, -1}; and the Mixed IWSMs {3, 1, -2, -2} and {3, 3, -2, -2, -2}. For all ten classes, symmetry-constrained lattice models verify the complete node inventories, Chern charges, and surface chiral-flow incidence. Our results establish crystalline irreducibility as a phase-level organizing principle beyond individual Weyl nodes and provide a symmetry-resolved framework for identifying minimal Weyl complexes in electronic, phononic, and photonic systems.
We report a comprehensive high temperature structural investigation of the B-site ordered double perovskite SrLaCoNbO$_6$ using combined Raman spectroscopy and x-ray diffraction (XRD) over the range 25--900~$^\circ$C. Two distinct temperature-driven anomalies are identified at $T_\mathrm{OD} = 300\pm 25~^\circ$C and $T_\mathrm{PT} = 750\pm 25~^\circ$C through pronounced renormalizations in the phonon frequency and linewidth, accompanied by the evolution and suppression of characteristic XRD reflections. The low-temperature anomaly at $T_\mathrm{OD}$ is associated with an isostructural octahedral distortion within the monoclinic $P2_1/n$ phase. At $T_\mathrm{OD}$, the radial and angular distortion parameters of the CoO$_6$ and NbO$_6$ octahedra decrease to near-zero values before reversing upon further heating due to an inversion of the in-plane Co--O and Nb--O bond-length hierarchy. The high-temperature anomaly at $T_\mathrm{PT}$ corresponds to a symmetry-breaking structural phase transition from $P2_1/n$ to the monoclinic $I2/m$ phase, confirmed by group-theoretical analysis and Rietveld refinement. These results demonstrate that integrating temperature-dependent Raman spectroscopy with laboratory-based XRD, complemented by quantitative octahedral distortion analysis, provides a robust approach to disentangle isostructural octahedral distortions from symmetry-breaking phase transitions in complex double perovskite oxides without recourse to synchrotron or neutron diffraction facilities.
Understanding and controlling charge transfer at graphene-semiconductor interfaces is essential for the integration of two-dimensional materials into silicon-compatible technologies. Here, we combine ultraviolet photoelectron spectroscopy (UPS), Kelvin probe force microscopy (KPFM), angle-resolved photoemission spectroscopy (ARPES), scanning tunneling spectroscopy (STS) and density functional theory (DFT) to resolve work-function modulation and electronic coupling in graphene grown on Ge(001)/Si(001). UPS and KPFM reveal a spatially non-uniform work-function landscape correlated with the nanofaceted morphology of the substrate. ARPES and DFT calculations for the pristine interface consistently indicate n-type doping and electron transfer from Ge to graphene. In contrast, modeling of the oxidized interface predicts a reversal to p-type doping, providing a plausible explanation for the different doping polarities reported in the literature. Machine-learning-assisted classification of the STS data resolves distinct local electronic regimes, ranging from nearly free-standing graphene on nanofacet tops to more strongly coupled inter-facet regions and nanoribbon-like regions with distinct local electronic responses. By identifying the mechanisms governing local graphene-substrate interactions and charge transfer, our study provides guidelines for tailoring the synthesis process and minimizing defect formation during delamination. These insights support the production of high-quality graphene layers for electronic devices and for transfer as protective coatings for air-sensitive materials.
Large-scale electronic-structure calculations require efficient access to local observables without explicitly constructing all occupied orbitals. We develop hierarchical Fourier phase projection (HPP), which organizes Fourier probes into a reusable spatial hierarchy that progressively removes short-range aliasing while exploiting density-matrix locality. The method provides systematic refinement from low-cost local estimates to the projection-exact limit of the chosen numerical occupation operator, without discarding previously evaluated responses. Tests using frozen Kohn--Sham Hamiltonians for semiconducting and metallic systems demonstrate controllable convergence of electron densities and nonlocal pseudopotential forces, weak size dependence of the probing resolution required for a fixed local accuracy, and near-linear growth of the direct computational cost at fixed probing workload. Inter-level changes further provide practical information for terminating the refinement at finite accuracy. HPP connects electronic locality, observable accuracy, and computational effort within a single hierarchical framework, providing a scalable route to local quantities in large-scale electronic-structure calculations.
High-entropy stabilization chemistry is redefining materials design by transforming configurational disorder, arising from the deliberate incorporation of multiple principal cations, into a thermodynamic advantage that promotes phase stability and enables emergent functionalities. In this work, we investigate the evolution of magnetic ordering in spinel-type high entropy oxides by systematically varying the cation composition of the B site within a fixed high-entropy A-site matrix, (Ni$_{0.2}$Mg$_{0.2}$Co$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)B$_2$O$_4$. Upon introducing multicomponent B-site configurations, we uncover a strikingly linear dependence of the magnetic transition temperature (T$_C$) on the T$_C$s of the corresponding single B-site high-entropy systems. Remarkably, this trend persists even in highly complex (Ni$_{0.2}$Mg$_{0.2}$Co$_{0.2}$Cu$_{0.2}$Zn$_{0.2}$)(Cr$_{0.2}$Mn$_{0.2}$Fe$_{0.2}$Ga$_{0.2}$X$_{0.2}$)$_2$O$_4$, X = Al and Ti. Despite the material's extremely high degree of disorder, absence of a dominant magnetic ion or a straightforward superexchange pathway, detailed magnetization measurements, low-temperature X-ray magnetic circular dichroism, and neutron powder diffraction studies reveal robust long-range ferrimagnetic ordering. These results reveal an emergent predictability in ferrimagnetic high-entropy spinel oxides, where, despite extreme configurational disorder and competing interactions, robust ferrimagnetic order can arise from, rather than be hindered by, extreme configurational disorder. This establishes a pathway for predictively tuning magnetic transition temperatures in high-entropy oxides beyond conventional ordered systems.
Altermagnetic multiferroics provide a platform where non-relativistic spin-momentum locking (SML) coexists with relativistic spin textures, yet disentangling their different origins remains challenging. Here, using first-principles density-functional-theory calculations and symmetry analysis of the multipolar expansion of the spin polarization, we investigate the altermagnetic multiferroic BaCuF4. Its dominant non-relativistic altermagnetic d-wave SML originates primarily from a CuF6 octahedral rotation coupled to the polar distortion and can therefore be reversed by ferroelectric switching. We show that spin-orbit coupling generates additional spin multipoles and, depending on the Neel-vector orientation, induces spin canting and weak ferromagnetism. By exploiting the group-subgroup relations between spin groups and magnetic space groups, we then distinguish non-relativistic altermagnetic, canting-associated, and purely relativistic contributions to the SML. We further show that this hierarchy is encoded in the nonlinear spin-photogalvanic response, whose spin projection selectively probes contributions of different origins. These results establish a direct connection between the microscopic spin texture and nonlinear spin transport in altermagnetic multiferroics.
Cation distribution plays a critical role in determining the properties of crystalline oxides. Understanding the chemical factors that govern cation distribution is therefore essential for the rational design of cation-ordered materials, particularly frustrated magnets in which structural disorder can strongly affect the magnetic ground state. Here, we investigate the origin and evolution of cation distribution in the extensively studied M-type hexaferrite structure using the first Mn-based M-type hexaferrite, KSb3Mn9O19, as a model system. A systematic Cr3+-doped series, KSb3(Mn1-xCrx)9O19, was examined using powder and single-crystal X-ray diffraction, electron microscopy, and energy-dispersive X-ray spectroscopy. Cr3+ exhibits a pronounced preference for the Mn Kagome sublattice, accompanied by the evolution of Mn vacancies and Mn3+/Sb3+ disorder on neighboring sites. Analysis of the local coordination environments and their evolution with Cr content suggests that crystal-field effects, chemical bonding, and local structural strain collectively govern this site selectivity. The magnetic properties of the Cr-doped compounds show similar behaviors as the undoped parent compound, other than the doping-induced spin-glass state at the highest Cr concentration, supported by heat capacity measurements. These results establish a chemical picture of cation site distribution and selection in M-type hexaferrites and demonstrate how substitution at one crystallographic site can induce coupled redistribution and disorder across neighboring sublattices. Moreover, this work establishes local coordination chemistry as a route toward understanding and ultimately controlling cation distribution in complex oxides, providing chemical design principles for structurally well-defined frustrated magnetic materials.
Flat-band electronic states can be highly sensitive to chemical perturbations, offering opportunities to access a broader range of electronic behaviors beyond that of parent materials. Here, we report the discovery of a new series of compounds, Mo4TGa16Ge (T = Co, Rh, or Ir), derived from the strongly correlated flat-band superconductor, Mo4PtGa17, via nominally preserving the total valence electron counts. All three materials crystallize in a noncentrosymmetric cubic space group, F-43m, with Ge selectively occupying one of the Ga sites in the parent compound. Although the total electron count remains the same, Mo4TGa16Ge exhibits significantly distinct properties from Mo4PtGa17. Theoretical calculations predict metallic electronic structures with narrow, dominant Mo-d states at the Fermi energy, while low-temperature heat capacity results demonstrate finite Sommerfeld coefficients. However, electrical transport measurements show predominantly non-metallic behaviors with small observed activation energies, excluding the possibilities of conventional semiconducting behaviors. Combining chemical bonding analysis, electronic structure and compositional determination from X-ray crystallography and spectroscopy, we propose that the coexistence of the non-metallic transport features and the thermodynamically metallic behaviors can be attributed to the high sensitivity of the narrow-band materials to chemical disorders. Thus, the discovery and investigation of Mo4TGa16Ge provide a chemically tunable platform for studying disorder-controlled transport in flat-band intermetallics.
Nonmagnetic atomic occupation can control anomalous transverse transport by modifying magnetic symmetry without changing the underlying magnetic order. We demonstrate this effect using controlled $γ$-Mn, Mn$_4$N, and MnN reference states with the same lattice constant and identical noncoplanar all-in-all-out Mn magnetic configurations, while varying only the occupation of the N sublattice. The anomalous Hall and anomalous Nernst responses exhibit a pronounced zero--finite--zero evolution across the series despite the unchanged Mn spin order. In $γ$-Mn and MnN, the high magnetic symmetry enforces complete cancellation of the Brillouin-zone-integrated Berry curvature. In Mn$_4$N, N occupation lowers the magnetic symmetry while preserving inversion and breaking the relevant twofold rotational symmetries, thereby lifting the cancellation constraint and permitting an uncompensated Berry-curvature contribution along the [111] direction. The resulting finite anomalous Hall conductivity reaches $-126$~S/cm near the Fermi level. These results establish nonmagnetic sublattice occupation as a symmetry-control parameter for Berry-curvature-driven transport in compensated antiferromagnets, independent of changes in the magnetic order.
MoS2 has attracted significant attention for its promising applications in optoelectronics, owing to the remarkable stability of its excitons and trions. These quasiparticles have large binding energies that arise from the MoS2 moderate band gap and the unconventional screening of Coulomb interactions in low dimensions. Here, we investigate the screening of long-range Coulomb interactions in the 1H and 1T' phases of MoS2 across different dimensionalities, with particular emphasis on nanoribbons. Our analysis is based on first-principles calculations combined with the constrained random-phase approximation. This work presents a comparative study of MoS2, h-BN, black phosphorene, and graphene nanoribbons, with emphasis on the role of Coulomb interactions in shaping their electronic and magnetic properties. In one-dimensional nanoribbons, quantum confinement leads to a substantial enhancement of Coulomb interactions relative to 2D MoS2. Calculations show that the Hubbard U increases from 2.6 eV in the 2D system to nearly 3.5 eV in the semiconducting nanoribbons. In these systems, the Coulomb interaction is long-ranged, with its tail extending over more than 100 A, nearly twice of that in the 2D structure. The presence of asymmetric edge states involving d and p orbitals in non-hydrogen-passivated zigzag MoS2 nanoribbons, in contrast to phosphorene, h-BN, and graphene nanoribbons, results in a finite net magnetization.
Device-to-device and sample-to-sample variability remains a major obstacle to the reliable implementation of hafnia-based ferroelectrics, even in nominally identical structures fabricated under similar processing conditions. This highlights the need for operando diagnostic probes that provide process-relevant feedback beyond conventional structural phase analysis. Here, we demonstrate that operando nanoscale surface measurements serve as sensitive probe of the local electrochemical processes governing reliability in hafnia ferroelectric devices. Using epitaxial rhombohedral Y:HfO2 films grown on La0.67Sr0.33MnO3 (LSMO)-buffered SrTiO3 as a model system, we combine operando atomic force microscopy, conductive AFM, piezoresponse force microscopy, and correlative STEM-EELS to directly link surface evolution with interfacial electrochemistry. Devices exhibiting wake-up show a spatially uniform increase in surface height, arising from homogeneous oxidation of the LSMO electrode followed by oxygen migration into the ferroelectric layer during polarization switching. In contrast, leaky devices display pronounced surface roughening and blister formation, originating from spatially inhomogeneous oxidation states in the pristine LSMO electrode that promote competing oxygen evolution reactions at the LSMO/Y:HfO2 interface. The accompanying electron generation produces leakage which is transient. Guided by these mechanistic insights, we introduce simple modifications to the processing conditions, without altering the optimized ferroelectric phase, that suppress the competing electrochemical pathways and reproducibly yield 100% ferroelectric devices. More broadly, this work establishes operando surface evolution as a powerful nanoscale diagnostic of hidden electrochemical processes and provides a practical route for improving the reliability and reproducibility of hafnia-based ferroelectric devices.
Chiral spin textures, largely driven by the Dzyaloshinskii-Moriya interaction, offer significant potential for next-generation computing technologies due to their chirality and topological stability. Ferroelectric/ferromagnetic van der Waals heterostructures are particularly appealing because they can combine interfacial inversion-symmetry breaking and spin-orbit coupling to promote interfacial Dzyaloshinskii-Moriya interaction, while switchable ferroelectric polarization provides a nonvolatile tuning knob. This study investigates interfacial chiral spin textures in few-layer Fe$_3$GeTe$_2$/$α$-In$_2$Se$_3$ heterostructures. Two groups of topological Hall signals are identified just below and above the coercive field, and thickness-dependent transport reveals a notable reduction in critical temperature with increasing Fe$_3$GeTe$_2$ layer thickness. Low-temperature magnetic force microscopy images reveal two types of magnetic bubbles with opposite magnetic contrasts near the coercive field, each associated with distinct topological Hall signals. Together with atomistic spin-dynamics simulations and first-principles calculations, these results support the formation of interfacial DMI-stabilized chiral spin textures. Switching the ferroelectric polarization of the $α$-In$_2$Se$_3$ layer further enables nonvolatile modulation of both anomalous and topological Hall effects. The resulting ferroelectric and magnetic bistabilities generate four distinguishable Hall resistance states programmable by electric and magnetic fields. These findings highlight the potential of van der Waals interfaces for advanced device applications.
Three dimensional topological insulators of the tetradymite family, such as BiSbTeSe (BSTS), are attractive for spintronic and quantum device applications because of their compensated, bulk-insulating character. Nanostructured BSTS platelets are promising for practical TI based devices. However, their growth often requires complex equipment, organometallic precursors, or electrically insulating substrates. Simple growth on technologically relevant semiconducting substrates remains largely unexplored. Here, we report the vapor phase growth of van der Waals BSTS platelets directly on semiconducting MoS2 using a presynthesized BiSbTe1.5Se1.5 crystal as the source material. The grown BSTS platelets exhibit thicknesses ranging from 4 nm to 246 nm, with an average lateral size of 1.4 mkm for individual platelets. Raman spectra of platelets, acquired in correlation with AFM thickness measurements, reveal contributions from both BSTS and the underlying MoS2 substrate. Among the characteristic BSTS modes, A21g mode shows the highest sensitivity to platelet thickness and local composition. EDS analysis reveals a systematic thickness dependence of the platelet composition, with an apparent crossover around 49 nm that coincides with a change in the thickness dependence of the low-wavenumber component of the E2g Raman band. This correlation suggests a composition-related origin of the Raman behavior, with the compositional variations tentatively attributed to the differential volatility of the constituent elements during growth. These results demonstrate that MoS2 is a promising van der Waals platform for BSTS deposition and provide a structural and compositional baseline for future studies of BSTS-MoS2 heterostructures.
Engineering not only the magnitude but also the dynamics of synaptic weight updates is an important challenge for memristive neuromorphic hardware. Here, we show that Ag modification of TaO$_x$ memristors introduces an electrically selectable degree of freedom in synaptic depression through the interplay between Ag-related and oxygen-vacancy dynamics. Reference devices exhibit conventional bipolar switching, whereas Ag-modified devices display symmetric table-with-legs hysteresis loops, metastable intermediate states, and a strongly non-monotonic dependence of depression dynamics on programming amplitude. By varying only the pulse amplitude, the same device can be driven among three regimes: gradual sigmoidal depression, an abrupt update concentrated within a few pulses, and a broadly distributed evolution extending over more than one hundred pulses. A minimal coupled-state model, in which a vacancy-related switching variable interacts with a slower Ag-related internal degree of freedom, reproduces this gradual--abrupt--gradual crossover using two individually monotonic field-activated processes. The functional impact is assessed in a memristor-based multilayer perceptron. For MNIST, the abrupt, sigmoidal, and slowly evolving responses yield accuracies of approximately 50%, 85%, and 88%, respectively, while the gradual regime reaches approximately 72% for Fashion-MNIST. These results show that coupling Ag-related and oxygen-vacancy dynamics can transform synaptic depression from a fixed device characteristic into an electrically programmable property.
Thin chromium nitride (CrN) films were deposited by RF magnetron sputtering in a reactive atmosphere of Ar-N$_2$ on fused silica and MgO (001) substrates at temperatures between 400 $^o$C and 800 $^o$C. The influence of nitrogen content and substrate temperature on structural, electrical, and optical properties was systematically investigated. The overstoichiometric CrN films exhibited a reduced resistivity below 6 m$Ω\cdot$cm with stable p-type behavior, while increasing the substrate temperature above 600 $^o$C induced a transition to n-type conductivity. Spectroscopic ellipsometry in the UV-Vis-NIR and infrared spectral ranges revealed a strong dependence of the dielectric function and the absorption edge on film stoichiometry and deposition conditions. Structural characterization using X-ray diffraction and atomic force microscopy confirmed substrate-dependent crystallinity and grain growth. Density functional theory calculations showed that cation and anion vacancies strongly modify the electronic structure and optical response, explaining the experimentally observed conductivity transitions. The results demonstrate that the deposition parameters provide an effective means to tailor CrN thin films via defect engineering.
Quantum transport simulations that combine density functional theory (DFT) with the nonequilibrium Green's function formalism (DFT-NEGF) are important to modern technology, yet their unfavorable scaling has long confined predictive simulations to small, idealized systems far below the ten-thousand-atom scale of realistic devices. Here, we introduce HamGNN-NEGF, a linear-scaling framework with DFT-level fidelity. An E(3)-equivariant graph neural network trained on conventional DFT Hamiltonians of small structures predicts Hamiltonians for large devices, avoiding costly DFT-NEGF training data. The predicted Hamiltonians are integrated with DFT-derived electrode self-energies, a nonorthogonal kernel polynomial method for Fermi-level determination, and a recursive Green's function algorithm, yielding a computational cost that scales linearly with device length at fixed cross section. Even for devices containing fewer than 500 atoms, HamGNN-NEGF achieves speedups exceeding three orders of magnitude over fully self-consistent DFT-NEGF, with the advantage increasing further with system size. Benchmarks on pristine Pt-Si-Pt, doped Pt-Si:P-Pt, and Pt-molecule-Pt junctions demonstrate meV-level Hamiltonian accuracy, faithful transmission spectra, and predictive simulations beyond 10,000 atoms. Eliminating transport self-consistency also enables hybrid functionals such as HSE06 without additional NEGF overhead, while a zero-bias Hamiltonian approximation extends the framework to finite-bias transport in weakly nonlinear regimes. HamGNN-NEGF thus bridges first-principles accuracy and device-scale simulation, providing a practical route toward predictive modeling of realistic nanoelectronic and quantum devices.
Resolving the formation and dissociation mechanisms of hydrate requires identifying not only hydrate-like water, but also the specific cage topologies by which disordered liquid water reorganizes into, or escapes from, crystalline hydrate networks. Here we introduce HyTopo, a cage-topology-centered analysis framework that combines a hydrate order parameter, hierarchical ring and cage recognition, and cage-transition network analysis. Based on local orientational correlations, HyTopo classifies water molecules into liquid-like, precursor-like, hydrate-like, and ice-like environments, and uses this information to guide efficient topological searches for crystalline hydrate cages and defective intermediates. Applications to methane hydrate growth, homogeneous nucleation, and depressurization-induced dissociation reveal that hydrate evolution is governed by heterogeneous and pathway-dependent cage dynamics. During hydrate growth, EA-WPU suppresses the overall proliferation of cage-like structures while altering the balance between defective cages and crystalline sI cages. During nucleation, incomplete cage motifs dominate the early pathway and provide a structural reservoir from which a small fraction of stable 512 and 51262 cages. Hydrate dissociation proceeds through interfacial collapse, bulk decomposition, and dissolved-gas exsolution, with cage lifetimes and transition pathways strongly dependent on cage topology. These results show that HyTopo provides a physically interpretable and topology-resolved route to connect local water ordering, cage formation, structural defects, and hydrate phase transitions in complex molecular simulations.
Day-night solid-state power generation is experimentally demonstrated with thermoelectric generators integrated with a tunable radiative coating, which switches between a selective solar absorber during daytime and a radiative cooler during nighttime by temperature without any external control. The self-adaptive radiative coating is carefully designed with thermochromic VO2 thin film on heavily doped silicon substrate along with a phase-shifting silicon spacer in between, whose physical mechanism is elucidated. The fabricated coating exhibits a high solar absorptivity of 0.90 and a low infrared emissivity of 0.23 during daytime, and a high emissivity of 0.85 at night, resulting in large emissivity change of 0.62 within the atmospheric transparency window upon metal-to-insulator phase transition. From outdoor tests in a high vacuum apparatus, the tunable radiative coating in 35-mm squared size achieves 1.64 W/m2 power generation around noon time from a stack of commercial thermoelectric modules of 15 mm squared, which is 32% more from that with a black absorber. At night, it produces 26 mW/m2 power, outperforming the black emitter by 63%. Even exposed the ambient with convective loss, the 2-inch-round tunable coating generates power of 0.48 W/m2 at noon time, 14% more than the black absorber of the same size. The tunable radiative coating covered thermoelectric modules produces open circuit voltages from 433 mV to -62 mV in vacuum and from 300 mV to -51 mV in ambient through 24-hr continuous outdoor tests.
Secondary electron emission (SEE), arising from the interaction of energetic electrons with material surfaces, can induce deleterious effects in vacuum radio-frequency (RF) systems, notably multipacting, thereby degrading performance and threatening device integrity. Despite extensive efforts, effective and widely adopted mitigation strategies remain limited. Here, we report an approach to simultaneously tailor SEE and electrical conductivity using nanometric multi-element multilayers deposited by atomic layer deposition (ALD). The design and fabrication of these heterostructures are presented, and a range of films is systematically characterized to establish correlations between emission properties, electrical conductivity, chemical and structural features. We demonstrate that such heterostructures enable combinations of total electron emission yield (TEEY) and conductivity unattainable in single-phase materials, including regimes combining high TEEY with relatively high conductivity and low TEEY with low conductivities. These results open new avenues for the rational design of functional surfaces for vacuum electronic applications.
About two decades ago, ``strain engineering'' emerged as a powerful strategy to tune epitaxial thin films. Here we contend that ''orientation engineering'' - that is, controlling the film's growth direction - constitutes a complementary design route that opens unprecedented opportunities and deserves greater attention. Specifically, we show that orientation engineering can endow standard ferroelectric compounds with exotic and useful behaviors that may be difficult or impossible to obtain otherwise. Critically, we predict it readily enables ''trans-switching,'' where polarization components switch perpendicularly to the applied electric field, paving the way for novel 3D device architectures. We also show that, by controlling the electric screening provided by electrodes in contact with the film, ferrielectric behavior can be obtained. Notably, one can even design an operational mode where the switching is, in effect, fully transversal to the applied field. Supported by phenomenological calculations for representative compounds LiNbO$_3$ and BaTiO$_3$, we thus propose orientation engineering as a powerful and general method to unlock unprecedented functionalities in common ferroelectrics.
Chemically complex alloys feature intrinsically heterogeneous local chemical environments and, consequently, fluctuations in local fault energetics. However, experimentally quantifying their relationship remains challenging, leaving the role of this distributed energy landscape in deformation mechanisms incompletely resolved. Here, we develop a distribution based framework linking experimentally measured stacking fault widths to deformation relevant apparent fault energy, revealing a distributed local fault-energy landscape in CrCoNi. The framework reveals the stabilizing role of energy fluctuations and captures an upward shift in the apparent fault energetics, from negative values toward zero following heat treatment, which atomistic simulations associate with the emergence of L12 type chemical short-range order. Using one-dimensional kinetic Monte Carlo simulations, supported by electron microscopy observations, we further show that history-dependent changes in the local fault-energy landscape bias the competition among stacking faulting, nano-twinning and HCP transformation in CrCoNi. Our results provide an experimentally anchored, distribution-based framework for understanding deformation in chemically complex alloys as it evolves within a distributed fault-energy landscape shaped by local chemical order.
Solid electrolytes (SEs) for sodium-based superionic conductors (NaSICON) were first introduced in 1976 and quickly recognized for their excellent ionic conductivity. While considerable effort has been made to develop thin electrolytes for all-solid-state batteries (ASSBs), only a few sodium-based SEs have been successfully fabricated as thin films. These thin films are particularly desirable for their reduced electrical resistance, which typically increases with the thickness of the SE. By reducing the thickness of the SEs to the nanometer scale, their ionic conductivity can be significantly enhanced. In this study, the NASICON composite was initially prepared in the form of pellets using the mixed oxide technique with a planetary ball mill and synthesized by the solid-state method at 1300 °C. The resulting pellets were used as sputtering targets in a low-energy ion facility to prepare continuous NASICON nanofilms. To explore the effect of ion implantation on the electrical properties of NASICON, the prepared films were bombarded with Ni ions at 1.1 MeV and varying fluences, using the Tandetron accelerator at the CANAM infrastructure (NPI Řež). The electrical properties of both the synthesized and implanted films were analyzed through electrochemical impedance spectroscopy (EIS). The results, describing the impact of irradiation on NASICON's properties, are presented here.
Shape-programmable particles offer significant opportunities for microrobotic systems at the individual level and for hierarchical materials with emergent functionalities arising from collective particle behavior. However, fabricating shape-changing stimuli-responsive particles with complex three-dimensional geometries at colloidal length scales remains a major challenge. Here, we introduce a general fabrication framework that decouples particle geometry from material composition to produce free-standing three-dimensional colloidal particles with complex architectures. Our approach combines soft lithography, swelling-assisted extraction, and sacrificial adhesive transfer to fabricate particles with high geometric fidelity. We establish a predictive framework that defines the accessible design space for increasingly complex particle geometries. We further extend our framework to fabricate high-aspect-ratio pillar arrays with intricate three-dimensional architectures at colloidal length scales. To demonstrate material versatility, we fabricate particles from both liquid crystal elastomers and hydrogels. We show reversible shape-changing behavior of liquid crystal elastomer particles with cylindrical and chiral shapes under thermal and optical stimuli. In suspension, these particles display collective optical dynamic behavior arising from coupling between changes in the programmed liquid crystal organization within the particles and stimulus-induced geometric reconfiguration of the particles. Collectively, this work establishes a versatile platform for geometry-programmable colloidal particles with emergent collective functionalities, providing a route toward materials and fluids with dynamically programmable properties.