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In this study, we investigated the impact of charged impurities on the electrical properties of the topological insulator (Bi0.3Sb0.7)2Te3 (BST) and its indium-doped counterpart, \mathrm{In}_{0.14}\left(\mathrm{Bi}_{0.3} \mathrm{Sb}_{0.7}\right)_{1.86} \mathrm{Te}_3 (IBST), using field-effect gating. For thin BST (30 nm), charged impurities, potentially from silicon dioxide substrate traps, contribute to band tail-type localization, with the impurity density ( n_{\text{imp}} = 10^{11} \text{ cm}^{-2} ) suggesting an external influence, though quantitative confirmation is needed. In contrast, thick BST (60 nm) exhibits potential fluctuations driven by inherent impurities ( n_{\text{imp}} = 2.23 \times 10^{14} \text{ cm}^{-2} ), forming electron-rich (n-type) and hole-rich (p-type) regions that cause band meandering near the chemical potential. Indium doping in thin IBST significantly increases the impurity density to 1.53 \times 10^{15} \text{ cm}^{-2} , exacerbating these fluctuations and reducing mobility due to enhanced scattering. Gate-dependence analysis further revealed a temperature-driven transition from n-type to p-type characteristics at elevated temperatures (~170 K), attributed to thermal activation of holes in p-type regions. These findings highlight the critical role of impurity management in optimizing topological insulators for applications in spintronics and quantum computing.