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Nanofabrication enables flexible experimental design but is often incompatible with scanning tunneling microscopy and spectroscopy (STM/STS) due to the latter's stringent surface quality requirements. Here, we present a fabrication strategy that combines ex situ nanolithography with in situ ultrahigh-vacuum (UHV) cleaving to produce atomically clean, nanopatterned superconductor/topological insulator (TI) heterostructures suitable for high-resolution STM/STS. In our initial Design I, nanoribbons were defined by etching trenches into a TI film, followed by niobium capping and sample flipping before cleaving. This enabled STM/STS to be applied in large areas, although edge quality was limited by etch debris. To overcome this, we developed Design II, which avoids etching through the film by locally thinning it, leaving nanoscale ribbons raised above a continuous TI layer, followed again by Nb capping and sample flipping before cleaving. This method yields clean, reproducible nanostructures with well-defined superconducting gaps, demonstrating a reliable fabrication pathway for high-resolution STM/STS studies of nanoscale topological devices.