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In twisted van der Waals materials, local atomic relaxation can significantly alter the underlying electronic structure and properties. Characterizing the lattice reconstruction and the impact of strain is essential to better understand and harness the resulting emergent electronic states. Here, we use a scanning single-electron transistor to image spatial modulations in the electronic structure of helical trilayer graphene, demonstrating relaxation into a superstructure of large domains with uniform moire periodicity. We further show that the supermoire domain size is enhanced by strain and can even be altered in subsequent measurements of the same device, while nevertheless maintaining the same local electronic properties within each domain. Finally, we observe higher conductance at the boundaries between domains, consistent with the prediction that they host counter-propagating topological edge modes. Our work confirms that lattice relaxation can produce moire-periodic order in twisted multilayers, demonstrates strain-engineering as a viable path for designing topological networks at the supermoire scale, and paves the way to direct imaging of correlation-driven topological phases and boundary modes.