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Material processing with femtosecond lasers has attracted enormous attention because of its potential for technology and industry applications. In parallel, time-resolved x-ray diffraction has been successfully used to study ultrafast structural distortion dynamics in semiconductor thin films. Gracing incident x-ray geometry has been also used to look to distortion dynamics, but this technique is only sensitive to the surface of bulk materials with a limited temporal resolution. However, 'real-world' processing applications deal mostly with bulk materials, which prevent the use of such techniques. For processing applications, a fast and depth-sensitive probe is needed. To address this, we present a novel technique based on ultrafast dynamical diffraction (UDD) capable of imaging transient strain distributions inside bulk crystals upon single-pulse excitation. This pump-probe technique provides a complete picture of the temporal evolution of ultrafast distortion depth profiles. Our measurements were obtained in a thin crystalline Si wafer upon single pulse femtosecond optical excitation revealing that even below the melting threshold strong lattice distortions appear on ps time scales due to the formation and propagation of high-amplitude strain waves into the bulk.