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This work presents an equivalent circuit model for Magnetic Tunnel Junctions (MTJs) that accurately captures their magnetization dynamics and electrical behavior. Implemented in LTspice, the model is validated against direct numerical solutions of the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation. It effectively simulates essential spintronic phenomena, including ferromagnetic resonance, field- and spin-torque-induced switching, and spin-torque-induced oscillations. Simulation results demonstrate strong agreement between LTspice and LLGS solutions, confirming the model accuracy and utility for efficient circuit-level analysis of spintronic devices. The ability to incorporate time-dependent magnetic fields and voltage inputs makes the proposed model suitable for diverse applications such as neuromorphic computing, microwave signal processing, and spintronic memory technologies. By providing a computationally efficient yet physically accurate circuit representation, this work enables seamless integration of MTJs into larger electronic systems, potentially accelerating the development of advanced spintronic circuit architectures.