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This study demonstrates the direct correlation between the presence of the L2_1 ordered phase and the large enhancement in the thermoelectric performance of Fe_2VAl thin films deposited on MgO and Al_2O_3 substrates at temperatures varying between room temperature and 950^{\circ}C. We employ both experimental techniques and computational modeling to analyze the influence of crystallographic orientation and deposition temperature on the thermoelectric properties, including the Seebeck coefficient, electrical conductivity, and thermal conductivity. Our findings indicate that the presence of the L2_1 phase significantly enhances the power factor (PF) and figure of merit (zT), surpassing previously reported values for both bulk and thin film forms of Fe_2VAl, achieving a PF of 480 \muW/m\cdotK^2 and a zT of 0.025.