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We present the design, fabrication, and optical characterization of ultra-compact mid-wave infrared photodetector pixels. Our design relies on a guided mode resonance structure to confine incident mid-infrared light to the 250 nm-thick absorber region of all-epitaxially-grown material stack, and a hybrid cavity-guided mode resonance to confine the mode in the lateral direction. The resulting pixel, with deep subwavelength thickness and lateral dimensions on the order of almost two times free space operating wavelength is predicted to achieve external quantum efficiency of the order of 50%. Our work opens the door for truly compact mid-wave infrared pixels that offer the combined benefits of low dark current, room temperature operation, and small lateral size.