2025-04-03 | | Total: 4
Common mode chokes (CMCs) are conventional circuit elements performing several tasks, including noise suppression, hindering electromagnetic interference, providing signal integrity, and circuit protection. Much as they are widely used, their fundamental construction and description are often qualitative and lack an understanding of the underlying physical principles. We discuss the behavior of a commercial CMC based on the physical description of the superparamagnetic core and parasitic circuit elements. The results are validated using a DC bias current and an external magnetic field, which affect the magnetic properties. The behavior of the CMCs in the strongly non-linear regime is also described.
Reverse biasing triple-junction GaInP/Ga(In)As/Ge solar cells may affect their performance by the formation of permanent shunts even if the reverse breakdown voltage is not reached. In previous works, it was observed that, amid the three components, GaInP subcells are more prone to degrade when reverse biased suffering permanent damage, although they present an initial good performance. The aim of this work is, firstly, to study the characteristics of the defects that cause the catastrophic failure of the devices. For this, GaInP isotype solar cells were analysed by visual inspection and electroluminescence maps and submitted to reverse bias stress test. We find that specific growth defects (i.e. hillocks), when covered with metal, cause the degradation in the cells. SEM cross-section imaging and EDX compositional analysis of these defects reveal their complex structures, which in essence consist of material abnormally grown on and around particles present on the wafer surface before growth. The reverse bias stress test is proposed as a screening method to spot defects hidden under the metal that may not be detected by conventional screening methods. By applying a quick reverse bias stress test, we can detect those defects that cause the degradation of devices at voltages below the breakdown voltage and that may also affect their long-term reliability.
Cosmic-ray muon tomography is a promising technique for border security applications, leveraging highly penetrating cosmic-ray muons and their interactions with various materials to generate 3D images of large and dense objects, such as shipping containers. Using scattering and absorption of muons as they pass through dense cargo materials, muon tomography provides a viable solution for customs and border security by enabling the verification of shipping container declarations and preventing illegal trafficking. In this study, we utilized Monte Carlo simulations to evaluate the effectiveness of muon tomography for cargo characterization and contraband detection in various smuggling scenarios. Our results demonstrate that muon tomography can offers a novel approach to cargo inspection, moving beyond traditional 3D image reconstruction. Instead, it analyzes muon scattering and absorption rates in real time during scanning, enabling the prompt detection of discrepancies between actual cargo contents and declared goods within just 10 to 20 seconds. This method is particularly effective for cargo consisting of uniform loads composed of a single material or product, a common practice in shipping. Unlike traditional X-ray radiography, which analyzes detailed 2D images, muon tomography begins evaluating scatter-absorption rates within the first few seconds of scanning. This early assessment enables cargo evaluation long before a statistically reliable 3D image is formed, significantly improving scanning throughput without disrupting trade flow.
We report on energy bands and breakdown characteristics of Al2O3 dielectrics on ultra-wide bandgap (UWBG) AlGaN heterostructures. Metal-dielectric-semiconductor structures are important to sustain high fields needed for future high-performance UWBG transistors. Using systematic experiments, we determined the fixed charge density (> 1013 cm-2), the dielectric/interface, and electric fields in the oxide of under flat-band conditions in the semiconductor. Low gate-to-drain leakage current of up to 5 x 10-7 A/cm2 were obtained in the metal-oxide-semiconductor structures. In lateral metal-semiconductor-insulator test structures, breakdown voltage exceeding 1 kV was obtained with a channel sheet charge density of 1.27 x 1013 cm-2. The effective peak electric field and average breakdown field were estimated to be > 4.27 MV/cm and 1.99 MV/cm, respectively. These findings demonstrate the potential of Al2O2 integration for enhancing the breakdown performance of UWBG AlGaN HEMTs.