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The nitrogen-vacancy (NV) center is a photoluminescent defect in diamond that exists in different charge states, NV− and NV^0, that are sensitive to the NV's nanoscale environment. Here, we show that photoluminescence (PL) from NV centers in fluorescent nanodiamonds (FNDs) can be employed for all-optical voltage sensing based on electric field-induced NV charge state modulation. More than 95% of FNDs integrated into a capacitor device show a transient increase in NV^- PL intensity of up to 31% within 0.1 ms after application of an external voltage, accompanied by a simultaneous decrease in NV^0 PL. The change in NV^- PL increases with increasing applied voltage from 0 to 100 V, corresponding to an electric field of 0 to 625 kV cm^ {-1} in our devices. The electric field sensitivity of a single FND is 19 V cm^{-1} Hz^ {-1/2}. We investigate the NV charge state photodynamics on the millisecond timescale and find that the change in NV PL strongly depends on the rate of photoexcitation. We propose a model that qualitatively explains the observed changes in NV PL based on an electric field-induced redistribution of photoexcited electrons from substitutional nitrogen defects to NV centers, leading to a transient conversion of NV^0 to NV^- centers upon application of an external voltage. Our results contribute to the development of FNDs as reliable, all-optical, nanoscale electric field sensors in solid-state systems.