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#1 Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier [PDF] [Copy] [Kimi] [REL]

Authors: Junlin Mi, Ruinan Fan, Liping Yan, Yuhao Feng, Changjun Liu

This letter proposes a high-power and high-efficiency GaN-HEMT voltage-controlled oscillator. The VCO consists of a coupled-line coupler, an inverse class-F amplifier, and a novel frequency-tunable stepped-impedance resonator. Using a harmonic control circuit and a parasitic parameter compensation circuit, the power amplifier operates in the inverse class-F state to achieve high efficiency. The feedback circuit uses a coupled-line coupler instead of the traditional coupling capacitor to control feedback power precisely. The measurement results show that the VCO with an oscillation frequency of 2.41-2.45 GHz achieves a maximum conversion efficiency of 74.5% at 2.44 GHz and an output power of 40.2 dBm. It is a candidate for the microwave source in a wireless power transmission system.

Subject: Applied Physics

Publish: 2025-12-05 16:18:55 UTC