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Increasing the valley splitting in Si-based heterostructures is critical for improving the performance of semiconductor qubits. This paper demonstrates that the two low-energy conduction band valleys are not independent parabolic bands. Instead, they originate from the X-point of the Brillouin zone, where they are interconnected by a degeneracy protected by the non-symmorphic symmetry of the diamond lattice. This semi-Dirac-node degeneracy gives rise to the $Δ_1$ and $Δ_{2'}$ bands, which constitute the valley degrees of freedom. By explicitly computing the two-component Bloch functions $X_1^\pm$, using the wave vector group at the X-point, we determine the transformation properties of the object $(X_1^+,X_1^-)$. We demonstrate that these properties are fundamentally different from those of a spinor. Consequently, we introduce the term "valleyor" to emphasize this fundamental distinction. The transformation properties of valleyors induce corresponding transformations of the Pauli matrices $τ_1,τ_2$ and $τ_3$ in the valley space. Determining these transformations allows us to classify possible external perturbations that couple to each valley Pauli matrix, thereby identifying candidates for valley-magnetic fields, ${\mathsf B}$. These fields are defined by a Zeeman-like coupling ${\mathsf B}\cdot\vecτ$ to the valley degree of freedom. In this way, we identify scenarios where an applied magnetic field $\vec B$ can leverage other background fields, such as strain, to generate a valley-magnetic field ${\mathsf B}$. This analysis suggests that beyond the well-known mechanism of potential scattering from Ge impurities, there exist additional channels (mediated by combinations of magnetic and strain-induced vector potentials) to control the valley degree of freedom