2605.09645

Total: 1

#1 Purcell enhancement in layered InSe on the Mie-resonant silicon nitride waveguide [PDF] [Copy] [Kimi] [REL]

Authors: A. I. Veretennikov, E. A. Shepelev, A. S. Shorokhov, P. A. Alekseev, I. A. Eliseyev, A. A. Fedyanin, M. V. Rakhlin

Hybrid integration of layered van der Waals (vdW) semiconductors with dielectric resonant structures provides an effective approach for controlling excitonic emission dynamics. Here, we demonstrate Purcell-enhanced spontaneous emission from a thin InSe flake integrated with a Mie-resonant Si$_3$N$_4$ waveguide. The structure is designed to spectrally overlap with the InSe photoluminescence band and enhance coupling of excitonic emission to the guided mode. Time-resolved photoluminescence shows a reduction of the excitonic decay time by up to a factor of three relative to planar InSe. The extracted Purcell factors are approximately 3 for out-of-plane excitons and 2.1 for in-plane excitons. These results demonstrate resonator-induced control of excitonic recombination in layered InSe and highlight vdW-dielectric interfaces as a platform for integrated excitonic and quantum photonic devices.

Subject: Mesoscale and Nanoscale Physics

Publish: 2026-05-10 16:44:20 UTC