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Hybrid integration of layered van der Waals (vdW) semiconductors with dielectric resonant structures provides an effective approach for controlling excitonic emission dynamics. Here, we demonstrate Purcell-enhanced spontaneous emission from a thin InSe flake integrated with a Mie-resonant Si$_3$N$_4$ waveguide. The structure is designed to spectrally overlap with the InSe photoluminescence band and enhance coupling of excitonic emission to the guided mode. Time-resolved photoluminescence shows a reduction of the excitonic decay time by up to a factor of three relative to planar InSe. The extracted Purcell factors are approximately 3 for out-of-plane excitons and 2.1 for in-plane excitons. These results demonstrate resonator-induced control of excitonic recombination in layered InSe and highlight vdW-dielectric interfaces as a platform for integrated excitonic and quantum photonic devices.