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Resonant cooling of the nuclear spin system of a semiconductor by spin-polarized charge carriers under pumping with helicity-modulated polarized light is considered theoretically. It is shown that in the case of strong Knight field of charge carriers, exceeding local fields of the dipole-dipole interaction of nuclear spins, the Overhauser field arising as a result of resonant cooling can considerably modify the overall shape of magnetic-field dependences of charge carrier spin polarization, experimentally observed as the Hanle effect.