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#1 Spin-Orbit Coupling Effects on the Structural and Electronic Properties of Planar Pentagonal p-MS$_{2}$ (M = Si, Ge, and Pb) [PDF] [Copy] [Kimi] [REL]

Authors: Phuc-Dang Truong, Cao-Huu-Tai Nguyen, Nguyen-Bao-Tran Ngo, Khanh-Van Huynh, Jan Minar, Worawat Meevasana, Yen-Mi Tran, Trung-Phuc Vo

Spin-orbit coupling (SOC) plays an important role in determining the structural and electronic properties of recently proposed two-dimensional planar pentagonal materials. In this work, density functional theory calculations are employed to investigate SOC effects in p-MS$_{2}$ systems (M = Si, Ge, and Pb). Our results indicate that the p-SiS$_{2}$ structure is likely unstable, except for p-GeS$_{2}$ and p-PbS$_{2}$. A detailed j-resolved (total angular momentum) orbital analysis reveals that SOC enhances electronic localization, leading to a slight structural contraction and a reconstruction of electronic states near the Fermi level, this effect becoming stronger for heavier M atoms. While p-GeS$_{2}$ remains metallic, SOC drives a metal-semiconductor transition in p-PbS$_{2}$ and opening a quasi-direct band gap of about 0.475 eV. In addition, the conduction band minimum state of p-PbS$_{2}$ exhibits pronounced anisotropy along the S-S bonds. These findings provide insight into SOC-driven structural and electronic reconstruction in planar pentagonal chalcogenides p-MS$_{2}$ and suggest that p-PbS$_{2}$ may be a promising candidate for gas-sensing applications.

Subject: Materials Science

Publish: 2026-05-28 10:25:10 UTC