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The realization of on-chip photonic circuits requires scalable and deterministic single-photon emitters (SPEs) at room temperature, which remain a challenge in van der Waals materials. In this work, we report a novel three-step fabrication process for the generation of spatially controlled SPE arrays in hexagonal boron nitride (hBN). The process comprises site-selective gallium (Ga) focused ion beam milling, nanoscale conformal carbon deposition over the patterned regions, and subsequent thermal annealing. The synergistic combination of these steps resulted in a site-correlated emitter yield of ($\sim 89\%$) across 100 fabrication sites. Second-order autocorrelation measurements revealed pronounced three-level emitter dynamics where the best emitters exhibited high purity ($g^{(2)}(0)=0.15 \pm 0.09$).To the best of our knowledge, this is the first lithography-free, direct-write approach combining Ga-ion milling, selective carbon engineering, and thermal annealing to deterministically generate \hBN{} \SPE{}s. The reproducibility of the method is validated across multiple independently fabricated samples. These results establish a scalable, lithography-free pathway toward on-demand SPE arrays relevant to integrated quantum photonics.