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Voltage-tunable capacitors (varactors) are key to microwave circuits. Tunable dielectric varactors outperform competing technologies in almost every relevant metric but usually suffer from high dielectric loss. In contrast, Ruddlesden-Popper (RPs) dielectric thin films have remarkably low microwave loss. Unfortunately, their crystallographic symmetry has until recently dictated an in-plane device structure, precluding the favorable out-of-plane parallel-plate varactor design for minimized size and maximized electric field in the tunable dielectric. Guided by theory, we report RPs akin to the widely studied tunable microwave dielectric BaxSr1-xTiO3. Assembling these same atoms into the first RP phase with broken out-of-plane symmetry, we achieve a low-loss, out-of-plane tunable dielectric thin film. The highest performing film, (ATiO3)nAO film with A = Ba0.45Sr0.55 and n = 8, unlocks a tenfold improvement in the figure of merit for out-of-plane tunable dielectrics at 10 GHz, paving the way for a new generation of tunable monolithic microwave integrated circuits.