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We investigate degradation pathways and surface protection strategies for epitaxial 2H-MoTe2 films grown by molecular beam epitaxy on GaAs(111)B substrates. Using X-ray photoelectron spectroscopy, scanning tunneling microscopy, atomic force microscopy (AFM), Kelvin probe microscopy (KPM), Raman spectroscopy, and density functional theory (DFT) calculations, we analyse the structural, chemical, and electronic evolution of MoTe2 films protected by Co and Ni capping layers. XPS shows that the metallic caps effectively suppress oxidation during short-term air transfer, while the films exhibit a pronounced Te-rich near-surface composition. However, the caps become increasingly difficult to remove with exposure time, suggesting the gradual development of interfacial bonding, likely promoted by excess tellurium and defect-rich MoTe2 interfaces. AFM and KPM reveal strong thickness-dependent changes with time (ageing), with ultrathin regions showing markedly different contact-potential evolution from thicker films. DFT calculations for pristine and oxidized MoTe2 based structures qualitatively support the sensitivity of the work function and density of states to thickness and surface chemistry. Raman measurements performed through approximately 20 nm thick metallic caps demonstrate that such layers can provide partial optical access to the protected material. Additional AFM and Raman observations suggest that Te-rich nanostructures may form locally under laser illumination or near edges of the sample and mechanically formed chips. These results establish practical guidelines for the short-term protection, transfer, delamination, and optical characterization of air-sensitive MoTe2 and related van der Waals materials.