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Spintronic synaptic devices based on magnetic random access memory (MRAM) are a rapidly evolving class within the analog neuromorphic architecture. However, obtaining the multi-weight or analog behavior desired for improved neural network inference accuracy in scaled MRAM remains a challenge. In this study, we demonstrate and tune up to eight distinct resistance levels in 300 mm wafer-scale magnetic tunnel junction artificial synapses driven by spin orbit torque. By varying the applied in-plane field, multi-weight resistance states emerge through domain wall nucleation and pinning. These multi-weight states appear stochastically and can be addressed with an iterative programming algorithm to program a specific resistance. Electromagnetic simulations indicate the multiple states are due to domain wall nucleation mediated by in-plane field and applied voltage. Implementation of the measured multi-weight devices in a neural network yields a 96.1% inference accuracy using the MNIST dataset if all devices provide the same number of multi-weight states. When experimental device-to-device variation is included, the accuracy is 48.6%. Overall, this work demonstrates a route towards multi-weight artificial synapse MRAM, establishing a path towards scalable neuromorphic systems based on spintronics.