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This paper presents a finite-element framework to study how device geometry affects the switching current of multilayer heater nano cryotrons (hTrons). The device comprises a 50 nm Au/5 nm Ti heater, a 100 nm SiO2 spacer, a 23.6 nm NbN channel, and a Si substrate. Two-dimensional electrothermal simulations examine nine heater and channel width combinations using widths of 100, 500, and 1000 nm. Three-dimensional simulations show how heat flows through the layers and spreads across the channel near the heater-channel overlap. Heater electrical losses and heat transport are coupled, whereas the channel switching threshold is obtained separately from a temperature-dependent constitutive relation. Published global temperature measurements support the switching-law calibration, and heater-current measurements assess the resulting device response. The model measurement comparisons show a systematic reduction of switching-current density with heating, but also geometry-dependent discrepancies in the low-drive plateau and transition shape. A common extraction protocol is formulated for heater-current and heater-power requirements at a specified suppression level, while separating fitted device amplitudes from controlled geometry effects. The resulting comparisons connect thermal fields to design metrics while distinguishing calibration from validation and excluding transient-performance claims from the stationary analysis