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Van de Waals materials possess great potential as core active materials for novel electronics, optoelectronics, and sensing applications. In particular, transition metal dichalcogenides (TMDs) and other low-dimensional materials, such as hexagonal boron nitride and binary oxides exhibit memristive behavior, making them attractive candidates as building blocks for resistive memories and neuromorphic computing devices. In this work, we investigate two-terminal lateral memristors based on mechanically exfoliated few layer $MoS_2$ flakes. We study the influence of the Schottky barrier height (SBH) as a function of the contact area. We report different SBHs from 60 meV up to 208 meV in the same $MoS_2$ flake and analyze the effect of the SBH in the memristive-like $J-V_{DS}$ curves and the observed non-volatile/volatile resistance switching. Our results highlight the importance of contact engineering to obtain different memristive properties in $MoS_2$-based devices.