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Using nonequilibrium Monte Carlo simulations of the phonon Boltzmann transport equation, we study transient heat transfer in five indium-based two-dimensional monolayers: Janus monolayers In2SeTe and In2SSe, pristine InSe, and InSe under 4% and 6% tensile strain. In this work, the potential of these materials for energy conversion in thermoelectric generators and hotspot control in metal-oxide-semiconductor field-effect transistors is investigated. A promising option for an effective heat dissipation and enhanced transistor reliability is found to be a strained InSe, which shows the lowest peak temperature during the heating among the studied materials. On the other hand, with a high Seebeck coefficient, low thermal conductivity, and an improved figure of merit, the Janus In2SeTe monolayer, compensates for its increased phonon scattering to reach the maximum temperature, making it a potent thermoelectric material. Our findings emphasis the importance of strain engineering and structural asymmetry in tuning phonon transport, enabling material optimization for next-generation nanoelectronic and energy-harvesting devices.