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Two-dimensional semiconductors, such as monolayer MoS$_2$, combine a technologically useful band gap with an all-surface geometry, making them attractive both as field-effect-transistor channels and as chemically sensitive devices. Predictive device design requires a transport model that is (i) physically grounded rather than empirical, (ii) validated against experiments, and (iii) able to span the scales from electron-phonon coupling to terminal current and sensor response. We present a self-consistent ensemble Monte Carlo (EMC) framework for monolayer MoS$_2$ built on the ViennaEMC solver, comprising a Boltzmann-transport kernel with a full intrinsic and extrinsic scattering stack (deformation-potential acoustic and intervalley phonons, polar-optical Fröhlich and piezoelectric coupling, remote substrate phonons, screened charged-impurity and surface-roughness scattering), degenerate free-carrier statistics, and a self-consistent Poisson coupling. The intrinsic transport parameters are verified against first-principles density-functional perturbation theory (DFPT), and seven quantities (lattice constant, conduction-band effective mass, band gap, Born effective charges, the longitudinal-optical phonon energy, and both in-plane sound velocities) agree with the reference parametrization. In a multiscale coupling, the EMC velocity-field characteristic feeds a one-dimensional velocity-saturation channel model, which captures the velocity-saturated field dependence and reproduces the measured transfer characteristics of a CVD monolayer device in air and vacuum. Finally, an ambient/adsorbate extension reproduces the measured conductivity response to oxygen partial pressure and the concentration dependence of NO$_2$ and NH$_3$ sensing measured in several independent devices.