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The capacitance of thin-film diodes based on undoped semiconductors are dominated by injected charge carriers rather than doping-induced carriers. However, an analytical framework of the capacitance in these devices has remained elusive. Here, we derive an analytical description of the capacitance, fully accounting for injected charge carrier and electrode charge effects. Based on these findings, a method to extract the built-in voltage in these devices is presented. The theoretical framework is substantiated numerically by drift-diffusion simulations and experimentally on organic solar cells.