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Whether an initially crack-free heterostructure fails at its interface or within an adjoining phase is controlled by the relative cohesion of competing atomic planes, but how interfacial chemistry, crystallographic orientation, and intermixing reshape this competition remains unclear. Here, we combine density functional theory (DFT) with a fine-tuned atomistic foundation model to resolve tensile fracture in coherent diamond/cubic boron nitride (cBN) heterostructures. The resulting potential reproduces independent DFT tensile responses, including an unseen (001) interface orientation. Interfacial termination, orientation, and diffusion-induced intermixing jointly determine fracture resistance and fracture-plane selection. C-N-bonded (111) and C-B-bonded (001) remain interface-controlled throughout the investigated intermixing range, whereas pristine C-B-bonded (111) fractures at a neighboring B-N plane inside cBN because the interface is more strongly bound. Increasing the diffusion fraction from 0 to 50.0% causes a nonlinear decrease in fracture strength from 50.3 to 15.8 GPa and drives a bulk-to-interface transition through three regimes: cBN fracture up to 4.86%, configuration-dependent competition between 7.6 and 10.1%, and interfacial fracture at 12.5% and above. Atom-resolved stress fields and DFT separation energetics show that this transition is associated with stress relocation and a reversal in the relative cohesion of competing planes, while electron localization analysis connects the cohesion hierarchy to termination- and orientation-dependent bonding. These results establish an atomistic framework for controlling fracture resistance and fracture pathways in strongly bonded heterostructures.