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We demonstrate high-efficiency, field-free superconducting diode behavior in W-N/FePt bilayers fabricated entirely by sputtering at room temperature. The devices combine amorphous W-N superconducting thin films with a 48-nm-thick FePt layer exhibiting remanent stripe-domain magnetization. We used lithographically patterned microbridges to compare W-N/FePt bilayers with single-layer W-N reference films at three nominal W-N thicknesses (18, 24, and 28 nm). The bilayers exhibit superconducting transition temperatures of approximately 4.1-4.3 K. At zero applied magnetic field, the current-voltage (I-V) characteristics exhibit pronounced nonreciprocity, controlled by the orientation of the in-plane remanent FePt magnetization relative to the transport current. The diode response is maximized for perpendicular alignment, reverses polarity upon magnetization reversal, and is strongly suppressed when the magnetization is aligned with the current. This behavior is consistent with asymmetric vortex entry and motion governed by the magnetic stray fields generated near the bridge edges. At 3 K with the remanent magnetization perpendicular to the current, increasing the W-N thickness from 18 to 28 nm widens the current interval between the dissipation thresholds for opposite polarities from about 0.3 to 1.55 mA. All three bilayers exhibit diode efficiencies of approximately 75-80% in this configuration.