2026-01-19 | | Total: 35
A key challenge in topology optimization (TopOpt) is that manufacturable structures, being inherently binary, are non-differentiable, creating a fundamental tension with gradient-based optimization. The subpixel-smoothed projection (SSP) method addresses this issue by smoothing sharp interfaces at the subpixel level through a first-order expansion of the filtered field. However, SSP does not guarantee differentiability under topology changes, such as the merging of two interfaces, and therefore violates the convergence guarantees of many popular gradient-based optimization algorithms. We overcome this limitation by regularizing SSP with the Hessian of the filtered field, resulting in a twice-differentiable projected density during such transitions, while still guaranteeing an almost-everywhere binary structure. We demonstrate the effectiveness of our second-order SSP (SSP2) methodology on both thermal and photonic problems, showing that SSP2 has faster convergence than SSP for connectivity-dominant cases -- where frequent topology changes occur -- while exhibiting comparable performance otherwise. Beyond improving convergence guarantees for CCSA optimizers, SSP2 enables the use of a broader class of optimization algorithms with stronger theoretical guarantees, such as interior-point methods. Since SSP2 adds minimal complexity relative to SSP or traditional projection schemes, it can be used as a drop-in replacement in existing TopOpt codes.
We establish a rigorous mathematical framework connecting graphene nanoribbon quantum sensing to the Lambert W function through the finite square well (FSW) analogy. The Lambert W function, defined as the inverse of $f(W) = We^W$, provides exact analytical solutions to transcendental equations governing quantum confinement. We demonstrate that operating near the branch point at $z = -1/e$ yields sensitivity enhancement factors scaling as $η_{\text{enh}} \propto (z - z_c)^{-1/2}$, achieving 35-fold enhancement at $δ= 0.001$. Comprehensive numerical verification confirms: (i) all seven bound states for strength parameter $R = 10$ satisfying the constraint $u^2 + v^2 = R^2$; (ii) exact agreement between theoretical band gap formula $E_g = 2π\hbar v_F/(3L)$ and empirical relation $E_g = 1.38/L$ eV$\cdot$nm; (iii) universal sensitivity scaling across biomedical (SARS-CoV-2, inflammatory markers, cancer biomarkers), environmental (CO$_2$, CH$_4$, NO$_2$, N$_2$O, H$_2$O), and physical (strain, magnetic field, temperature) sensing modalities. This unified framework provides design principles for next-generation graphene quantum sensors with analytically predictable performance.
Reported electron and hole mobilities, and their saturation velocities, in diamond span orders of magnitude across the literature. We attribute this dispersion primarily to (i) the electric-field window probed in TCT measurements, (ii) the choice of mobility model, and (iii) the excitation source (alpha, laser, or electron). Using an aggregated literature dataset, we benchmark the Trofimenkoff and Caughey-Thomas parameterisations together with a new piecewise model for both conduction- and valence-band transport. For electrons, the piecewise model provides the best global description over a broad electric-field range and is shown to arise as the room-temperature limit of a more general superposition framework that explicitly incorporates intervalley repopulation in the conduction band. For holes, the Caughey-Thomas model remains the statistically preferred description, in line with the absence of a strong repopulation effect in the accessible data. Furthermore, we demonstrate a systematic source dependence (alpha versus laser) and quantify its impact on fitted mobility and saturation-velocity values. We provide temperature scalings over narrow intervals around room temperature and recommend parameter sets for implementation in device and detector simulation frameworks. Together, these results reconcile much of the apparent inconsistency in the literature and offer clear guidance for model selection, experimental design, and device-level simulation of charge transport in intrinsic diamond.
Natural organisms have evolved integrated Latch-Mediated Spring Actuation systems (LaMSA) that consist of multiple latches and springs to enhance power output and adapt to diverse environmental conditions. Similar designs are appealing yet largely unexplored in engineered materials due to the complexity of integrating multiple components into a single material platform. Here, we report a dual-latched magneto-elastic shell device capable of selectively activating the latches to regulate snapping pathways and energy output based on specific actuation requirements. Differential deswelling across the thickness acts as the motor to load the elastic energy into the shell, which is then released via the snap-through instability once the loading reaches the critical threshold, constituting an intrinsic mechanical latch. Activation of the external magnetic latch delays snapping onset beyond the threshold of the intrinsic latch, leading to a power-amplified supercritical snap-through instability as well as a bifurcation instability. The combined function of both latches allows for flexible control over energy storage and release. Additionally, this integrated LaMSA system possesses an untethered anchoring mechanism, enabling the device to launch in arbitrary directions from the substrate, driven by the energy released during snapping. We envision that the design principles of dual-latched LaMSA systems will create opportunities for power-dense actuation in engineered materials and robotic devices.
In this work we report a new and simple method that combines the pulsed laser ablation in liquids (PLAL) and the Sol-Gel techniques to obtain nanocomposite glasses and gelatins. Gold nanoparticles (Au-NPs) are generated by PLAL using the corresponding target. The target is submerged in a transparent liquid solution made previously with tetraetylorthosilicate (TEOS) adding diluted hydrochloric acid as catalyzer. In the case of gelatins commercial gelatin and tap water are used. The laser source is a Nd:YAG laser emitting at 1064 nm, with an energy of 100 mJ and 8 ns pulse duration at 10 Hz repetition rate focused on the target in a 2 mm diameter laser spot. The ablation time is 10 min for the glasses and gelatins. The Au-NPs are uniformly dispersed in the solution. After the ablation process the gels are sealed and stored at room temperature for several days. The samples are characterized by UV-Vis spectroscopy, HRTEM, ellipsometry and AFM microscopy, these measurements reveal optical transparency and a refractive index near 1.45 for the pure glass, whereas a colorful aspect, a refractive index of 1.42, and a small surface roughness of 1.92 nm for the glass containing Au-NPs. In the case of gelatins self-sustained flexible films are obtained.
Compared to the study of graphene itself, the study of nano-structured graphene is rather limited because it is difficult to prepare atomically ordered edges. In this study, we have fabricated a periodically patterned mesh structure of graphene with atomically precise zigzag edges (zGNM: zigzag graphene nanomesh) and studied its thermal conductivity ($κ$) by opto-thermal Raman measurement. Unintuitively, it is found that the $κ$ of zGNM of 2,3 monolayers (MLs) thick is inversely proportional to the nanoribbon width ($W$), while that of zGNM of 5$\sim$10 MLs thick is independent of $W$ down to 30 nm. Since the $κ$ of suspended zigzag graphene nanoribbons (zGNRs) is suppressed by decreasing $W$, this nonclassical behavior of zGNM is due to the mesh structure. In addition, zGNRs show a higher $κ$ than GNRs with atomically rough edges. This is probably due to the atomically ordered zigzag edges.
Electronic nematic and smectic liquid crystals are spontaneous symmetry-breaking phases that are seen to precede or coexist with enigmatic unconventional superconducting states in multiple classes of materials. In this Letter we describe scanning tunneling microscopy observations of a short ranged charge stripe (smectic) order in NaAlSi, whose superconductivity is speculated to have an unconventional origin. As well as this we resolve a clear spatial modulation of the superconducting gap amplitude, which arises due to the intertwined superconducting and smectic orders. Numerical calculations help to understand the possible driving mechanism as a suppression of kinetic energy on the Fermi surface formed in part by two large, flat-topped hole pockets of p-orbital character.
Soft, stretchable organic field-effect transistors (OFETs) can provide powerful on-skin signal conditioning, but current fabrication methods are often material-specific: each new polymer semiconductor (PSC) requires a tailored process. The challenge is even greater for complementary OFET circuits, where two PSCs must be patterned sequentially, which often leads to device degradation. Here, we introduce a universal, monolithic photolithography process that enables high-yield, high-resolution stretchable complementary OFETs and circuits. This approach is enabled by a process-design framework that includes (i) a direct, photopatternable, solvent-resistant, crosslinked dielectric/semiconductor interface, (ii) broadly applicable crosslinked PSC blends that preserve high mobility, and (iii) a patterning strategy that provides simultaneous etch masking and encapsulation. Using this platform, we achieve record integration density for stretchable OTFTs (55,000 cm^-2), channel lengths down to 2 um, and low-voltage operation at 5 V. We demonstrate photopatterning across multiple PSC types and realize complementary circuits, including 3 kHz stretchable ring oscillators, the first to exceed 1 kHz and representing more than a 60-fold increase in stage switching speed over the state of the art. Finally, we demonstrate the first stretchable complementary OTFT neuron circuit, where the output frequency is modulated by the input current to mimic neuronal signal processing. This scalable approach can be readily extended to diverse high-performance stretchable materials, accelerating the development and manufacturing of skin-like electronics.
Recent studies have shown that certain antiferromagnetic (AFM) materials with the same symmetry breaking as ferromagnets can generate sufficiently large ferromagnetic (FM) responses. Here, we report that the new AFM material NbMnAs exhibits a large anomalous Hall effect (AHE) at zero field and at room temperature, despite having only a small net magnetization. A polycrystalline sample of NbMnAs, likely close to stoichiometric composition, exhibited an AFM state with a small spontaneous magnetization of approximately $6 \times 10^{-3} μ_{\rm B}$/Mn and the AHE below $T_{\rm N}=354\,{\rm K}$. In contrast, single crystals of NbMnAs obtained by a flux method exhibited a deficiency at the As site, {which resulted} in a decrease in $T_{\rm N}$ and an increase in spontaneous magnetization. Although improvement of the single-crystal growth is still required, our study reveals that NbMnAs is a novel material capable of exhibiting significant FM responses derived from antiferromagnetism at room temperature.
In this work, we report that Bi2Ta3S6-family superconductors exhibit nontrivial band topology. They possess a natural quantum-well structure consisting of alternating stacks of TaS2 and honeycomb Bi layers, which contribute superconducting and topological properties, respectively. Symmetry-based indicators $(\mathbb{Z}_4;\mathbb{Z}_{2}\mathbb{Z}_{2}\mathbb{Z}_{2})=(2;000)$ reveal that the topological nature arises entirely from the Bi layers, which belong to a quantum spin Hall phase characterized by a $p_x-p_y$ model on a honeycomb lattice. The topological zigzag (ZZ) and armchair (AC) edge states are obtained. Using VASP2KP, the in-plane $g$ factors of these topological edge states are computed from the ab initio calculations: $g_{x/y}^{\mathrm{ZZ}}=2.07/1.60$ and $g_{x/y}^{\mathrm{AC}}=0.50/0.06$. The strong anisotropy of the edge-state $g$ factors allows us to explore Majorana zero modes in the Bi monolayer on a superconductor, which can be obtained by exfoliation or molecular beam epitaxy. The relaxed structures of the Bi2Ta3Se6, Bi2Nb3S6 and Bi2Nb3Se6 are obtained. Their superconducting transition temperature $T_c$ are estimated based on the electron-phonon coupling and the McMillan formula. Furthermore, using the experimental superconducting gap $Δ$ and the computed $g$ factors, we obtain the phase diagram, which shows that the in-plane field $B_y>2.62\mathrm{ T}$ can generate corner Majorana zero modes in the Bi monolayer of the superconductor Bi2Ta3S6. A similar paradigm also applies to the Bi2Ta3S6 bulk with the emergence of Majorana hinge states. These natural quantum-well superconductors therefore offer ideal platforms for exploring topological superconductivity and Majorana zero modes.
The capabilities of a plug-flow fixed-bed cell for operando studies of heterogeneous catalysts are demonstrated using laboratory-based X-ray absorption spectroscopy (XAS) with a von Hamos spectrometer. The cell operates at temperatures up to 1000 deg C and pressures up to 10 bar, equipped with three mass flow controllers and two infrared lamps for rapid heating under inert/reactive gas atmospheres. Proof-of-principle studies include in situ MnO oxidation in 5% Ni/MnO and operando Ni nanoparticle evolution in 20-NiO/COK-12 (20.2% NiO on SiO2) during CO2 methanation before/after activation. Within 5-15 min per spectrum, oxidation state changes are resolved while catalytic activity is simultaneously quantified by online GC. Extended datasets and methods are available in the ancillary file SI.pdf (Supplementary Information file). A shortened version is submitted to Journal of Analytical Atomic Spectrometry as a Technical Note.
The exploration of novel topological insulators (TIs) beyond binary chalcogenides has been accelerated in pursuit of exotic quantum states and device applications. Here, the layered ternary chalcogenide Ge2Bi2Te5 is identified as a three-dimensional TI. The bulk electronic structure of Ge2Bi2Te5 features a hole-type Fermi surface at Fermi level EF, which dominates the transport properties. Moreover, an unoccupied topological surface state with a Dirac point located at 290 meV above EF has been observed. Theoretical calculations confirm a bulk bandgap and a nontrivial Z2 topological invariant (000;1). The present study demonstrates that the material family of layered tetradymite-like ternary compounds is an important platform to explore exotic topological phenomena.
Incorporating self-interaction corrections (SIC) significantly improves chemical reaction barrier height predictions made using density functional theory methods. We present a detailed, orbital-by-orbital analysis of these corrections for three semi-local density functional approximations (DFAs) situated on the three lowest rungs of the Jacob's Ladder of approximations. The analysis is based on Fermi-Löwdin Orbital Self-Interaction Correction calculations performed at several steps along the reaction pathway from the reactants (R) to the transition state (TS) to the products (P) for four representative reactions selected from the BH76 benchmark set. For all three functionals, the major contribution to self-interaction corrections of the barrier heights can be traced to stretched bond orbitals that develop near the TS configuration. The magnitude of the ratio of the self-exchange-correlation energy to the self-Hartree energy (XC/H) for a given orbital is introduced as an indicator of one-electron self-interaction error. For the exact, but unknown density functional, XC/H = 1.0 for all orbitals, while for the practical DFAs studied here, XC/H spans a range of values. The largest values are obtained for stretched or strongly lobed orbitals. We show that significant differences in XC/H for corresponding orbitals in the R, TS, and P configurations can be used to identify the major contributors to the SIC of barrier heights and reaction energies. Based on such comparisons, we suggest that barrier height predictions made using the SCAN meta-generalized gradient approximation may have attained the best accuracy possible for a semi-local functional using the Perdew-Zunger SIC approach.
Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.
Accelerating alkali-ion battery discovery requires accurate modeling of atomic-scale kinetics, yet the reliability of universal machine learning interatomic potentials (uMLIPs) in capturing these high-energy landscapes remains uncertain. Here, we systematically benchmark state-of-the-art uMLIPs, including M3GNet, CHGNet, MACE, SevenNet, GRACE, and Orb, against DFT baselines for cathodes and solid electrolytes. We find that the Orb-v3 family excels in static migration barrier predictions (MAE $\approx$ 75--111 meV), driven primarily by architectural refinements. Conversely, for dynamic transport, the GRACE model trained on the OMat24 dataset demonstrates superior fidelity in reproducing ion diffusivities and structural correlations. Our results reveal that while architectural sophistication (e.g., equivariance) is beneficial, the inclusion of high-temperature, non-equilibrium training data is the dominant driver of kinetic accuracy. These findings establish that modern uMLIPs are sufficiently robust to serve as zero-shot surrogates for high-throughput kinetic screening of next-generation energy storage materials.
Anomalous Hall effect studies were performed at 300 K on Si/Fe multilayers prepared by dc magnetron sputtering. About 60 times enhancement in the saturation Hall resistance and 80 times enhancement in anomalous Hall coefficient are obtained in [Si(50 angstrom)/Fe(tFe)]_20 multilayers when decreasing the Fe layer thickness from 100 Angstrom to 20 Angstrom. The largest anomalous Hall coefficient (Rs) of 1.4 x 10^-7 Ohm m/T was found for t_Fe=20 Angstrom, which is about three orders of magnitude larger than that of pure Fe and Fe/Cr, Al/Fe, Cu/Fe, SiO2/FePt/SiO2 multilayers. The ordinary Hall coefficient R_0 was about two orders of magnitude larger than that of pure Fe. The R_s was found to vary with the longitudinal electronic resistivity, Rho as R_s proportional to (Rho)^2.2, indicating the role of interfaces for the enhancement of the anomalous Hall effect in the multilayers. An increase of Hall sensitivity from 9 mOhm/T to 1.2 Ohm/T is observed on decreasing tFe from 100 Angstrom to 10 Angstrom. The high Hall sensitivity obtained is about three orders of magnitude larger than that of Al/Fe and Cu/Fe multilayers, showing it as an emerging candidate for Hall element for potential applications.
Solid-state electrolytes (SSEs) are attractive for next-generation lithium-ion batteries due to improved safety and stability but their low room-temperature ionic conductivity hinders practical application. Experimental synthesis and testing of new SSEs remain time-consuming and resource intensive. Machine learning (ML) offers an accelerated route for SSE discovery; however, composition-only models neglect structural factors important for ion transport while graph neural networks (GNNs) are challenged by the scarcity of structure-labeled conductivity data and the prevalence of crystallographic disorder in CIFs. Here, we train two complementary predictors on the same room-temperature, structure-labeled dataset (n = 499). A gradient-boosted tree regressor (GBR) combining stoichiometric and geometric descriptors achieves best performance (MAE = 0.543 in log(S cm-1)), and Shapley Additive exPlanations (SHAP) identifies probe-occupiable volume (POAV) and lattice parameters as key correlations for conductivity. In parallel, we fine-tune large language models (LLMs) using compact text prompts derived from CIF metadata (formula with optional symmetry and disorder tags), avoiding direct use of raw atomic coordinates. Notably, Llama-3.1-8B-Instruct achieves high accuracy (MAE = 0.657 in log(S cm-1)) using formula and symmetry information, eliminating the need for numerical feature extraction from CIF files. Together, these results show that global geometric descriptors improve tree-based predictions and enable interpretable structure-property analysis, while LLMs provide a competitive low-preprocessing alternative for rapid SSE screening.
SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with (110) texture and that the two SiO2 layers are amorphous. Magnetic measurements performed with the applied field in in-plane and perpendicular direction to the film plane confirmed that the samples are soft ferromagnetic having strong in-plane magnetic anisotropy. The temperature dependence of magnetization shows complex behavior with the coexistence of both ferromagnetic and superparamagnetic properties. The transport properties of the samples as studied through Hall effect measurements show anomalous Hall effect (AHE). An enhancement of about 14 times in the saturation anomalous Hall resistance (R_Ahs) was observed upon reducing the t_Fe from 300 to 50 Angstrom. The maximum value of R_Ahs = 2.3 Ohm observed for tFe = 50 Angstrom sample is about 4 orders of magnitude larger than that reported for bulk Fe. When compared with the single Fe film, a maximum increase of about 56% in the R_Ahs was observed in sandwiched Fe (50 Angstrom) film. Scaling law suggests that the R_s follows the longitudinal resistivity (Rho) as, R_s proportional to (Rho)^1.9, suggesting side jump as the dominant mechanism of the AHE. A maximum enhancement of about 156% in the sensitivity S was observed.
Anomalous Hall effect studies on ultrathin Si(50Angstrom)/Fe(t_Fe) bilayers were performed at 300 K. Giant enhancements of about 60 times in saturation anomalous Hall resistivity and 265 times in anomalous Hall coefficient (R_s) were observed upon decreasing the Fe layer thickness t_Fe from 200 to 10 Angstrom. The R_s observed for t_Fe = 10 Angstrom is about three orders of magnitude larger than that of bulk Fe. The scaling law between R_s and longitudinal electrical resistivity (Rho) suggests that the side jump is the dominant mechanism of the anomalous Hall effect. The observed largest Hall sensitivity of 433 Ohm/T surpasses that of the semiconducting GaAs and InAs Hall sensors already reported.
Two-dimensional Janus structures have garnered rapidly growing attention across multidisciplinary fields. However, despite extensive theoretical and experimental efforts, a principle for designing intrinsic Janus materials remains elusive. Here, we propose a first-principles alloy theory based on cluster expansion, incorporating a strong repulsive interaction of a cation-mediated anion-pair cluster and refined short-range cluster-cluster competitions, to unravel the formation mechanism of intrinsic Janus structures with a distorted 1T phase among numerous competing phases. Our theory not only explains why intrinsic Janus structures are accidentally observed in RhSeCl and BiTeI which are composed of alloyed elements from different groups, but also accurately predicts a wide range of 1T-like intrinsic Janus materials that are ready for synthesis. Intriguingly, as demonstrated in the case of RhSeCl, we reveal that intrinsic Janus materials can exhibit anomalous second-harmonic generation (SHG) with a distinct quantum geometric effect, originating from strong lattice and chemical-potential mirror asymmetry. Furthermore, a novel skin effect unexpectedly emerges in finite-thickness RhSeCl, accompanied by a hidden SHG effect within the bulk region. Our theory paves the way for the ab initio design of intrinsic Janus materials, significantly accelerating progress in Janus science.
The dynamic strength of concrete under complex loading conditions is a key consideration in the design and maintenance of infrastructures. To assess this mechanical property, Split Hopkinson Pressure Bar (SHPB) tests are typically adopted across a wide range of loading and confining conditions. In this study, mesoscale modelling based on the finite element method (FEM) is employed to simulate SHPB tests on three-phase concrete with realistic aggregate shape, in order to investigate the effects of loading ramp rate, internal friction, and confining pressure on the dynamic increase factor (DIF). Microscopic evidence to explain these effects is explored through analysing the distributions of the internal strain rate and local damage. As key results, increasing loading ramp rates, internal friction, and confining pressure can generally leads to higher DIF values. Only a higher loading ramp rate significantly amplifies the strain-rate effect on the DIF, as evidenced by pronounced increases in both internal strain rate and damage in the mortar and aggregate phases. In contrast, higher internal friction and confining pressure weaken the strain-rate effect on the DIF. Both can be attributed to the mortar phase, which shows a less pronounced increase in damage with increasing strain rate. This study enriches the understanding of the dynamic fracture of concrete toward complex loading scenarios.
The strongly constrained and appropriately normed (SCAN) meta-GGA functional is a milestone achievement of electronic structure theory. Recently, a revised and restored form (r$^2$SCAN) has been suggested as a replacement for SCAN in high-throughput applications. Here, we assess the accuracy and reliability of the r$^2$SCAN meta-GGA functional for the group IV elemental solids carbon (C), silicon (Si), germanium (Ge), and tin (Sn). We show that the r$^2$SCAN functional agrees closely with its parent functional SCAN for elastic constants, bulk moduli, and phonon dispersions, but the numerical stability of r$^2$SCAN is superior. Both meta-GGA functionals outperform standard GGA (Perdew-Burke-Ernzerhof) in terms of accuracy and approach the level of common hybrid functionals (Heyd-Scuseria-Ernzerhof). However, we find that r$^2$SCAN performs much worse than SCAN for the $α\leftrightarrow β$ phase transition of both Ge and Sn, yielding larger phase energy differences and transition pressures.
Impact ionization probabilities were calculated in a CdHgTe quantum well, where the distance between electron subbands is close to the band gap energy. This band structure enables impact ionization with small momentum transfer for electrons in the second subband. The study demonstrates that such processes increase the impact ionization probability by approximately two orders of magnitude compared to the impact ionization probability for electrons in the first subband, for which transitions with small momentum changes are impossible. The probability of single impact ionization during the electron energy loss due to optical phonon emission is estimated. Experimental methods for detecting impact ionization in this structure are discussed.
We have performed density functional theory (DFT) calculations to characterize the energetics, and the atomic and electronic structure, of stacking faults in GaN, both in the stable hexagonal wurtzite (wz) phase and in the metastable cubic zincblende (zb) phase. In wz GaN, SFs on the (0001) planes can be divided into three different intrinsic stacking faults (I1, I2, and I3) and oneextrinsic stacking fault (E). In zb GaN, SFs form along (111) directions, giving one type each of intrinsic, extrinsic and twin SFs. Based on the calculated formation energy, I1 is the most stable SF of wz GaN in agreement with experiment. For zb GaN, the intrinsic stacking fault is the most dominant planar defect. To characterize the effect of the stacking faults on the electronic structure of the material, we examined the band density. We found that the bands near the valence band maximum in wz GaN are localised on the Ga-polar side of the stacking fault (i.e. on the Ga side of the Ga-N bonds perpendicular to the SF), with the bands near the conduction band minimum more on the N-polar side, though somewhat delocalised. We found the opposite trend in zb GaN; this behaviour is caused by a redistribution of charge near the interface. We also show the band offsets for the stacking faults, finding that they are very sensitive to local conditions, but can all be described as type II interfaces, with the presence of a stacking fault reducing the gap locally.
Tungsten exhibits exceptional temperature and radiation resistance, making it well-suited for applications in extreme environments such as nuclear fusion reactors. Additive manufacturing offers geometrical design freedom and rapid prototyping capabilities for these applications, provided the intrinsic brittleness and low printability of tungsten can be overcome. Designing tungsten alloys with improved ductility, and thus printability in additive manufacturing, can be accelerated using a computationally derived performance predictor to screen out brittle compositions. Calculations of the Pugh ratio using density functional theory may serve this purpose, given its correlation with ductility. This process can be made more efficient through the use of machine learning interatomic potentials to accelerate density functional theory calculations. Here, we demonstrate that machine learning interatomic potentials can effectively identify optimal alloy compositions in the W-Ta-Nb system along the melting point-Pugh ratio Pareto front. The trend in Pugh ratio as a function of tungsten fraction is explained in terms of the electronic density of states at the Fermi level. Experimental validation reveals a strong correlation between the computed Pugh ratio and the observed crack fractions in additively manufactured alloys. Notably, the two alloys predicted to have the highest Pugh ratio values, W20Ta70Nb10 and W30Ta60Nb10, exhibit no intergranular microcracking in experiments.