2026-01-19 | | Total: 78
In this work, we demonstrate that the intrinsic timescale of a Josephson junction can be controlled through dynamical vacuum selection. By applying a Kapitza-like high-frequency drive to the system, the effective Josephson potential is reshaped, allowing for the stabilization of inphase or antiphase configuration. As a result, the Josephson plasma frequency, that is, the clock frequency of the junction, becomes a tunable property of the selected vacuum. Our findings establish a vacuum-controlled Josephson clock principle, in which the dynamical vacuum acts as an internal reference that fixes the operational timescale of Josephson oscillations, rather than this scale being imposed externally.
X-ray absorption spectroscopy (XAS) and electron energy-loss spectroscopy (EELS) produce detailed information about oxidation state, bonding, and coordination, making them essential for quantitative studies of redox and structure in functional materials. However, high-throughput quantitative analysis of these spectra, especially for mixed valence materials, remains challenging as diverse experimental conditions introduce noise, misalignment, broadening of the spectral features. We address this challenge by training a machine learning model consisting of an autoencoder to standardize the spectra and a transformer model to predict both Cu oxidation state and Bader charge directly from L-edge spectra. The model is trained on a large dataset of FEFF-simulated spectra and evaluates model performance on both simulated and experimental data. The results of the machine learning model exhibit highly accurate prediction across the domains of simulated and experimental XAS as well as experimental EELS. These advances enable future quantitative analysis of Cu redox processes under in situ and operando conditions.
We have constructed a terahertz time domain spectroscopy system using a Bluefors dilution refrigerator with a 7 T split-coil magnet. Using a gallium arsenide single quantum well sample, terahertz waveforms were measured at 145 mK in a magnetic field range from 0 to 6 Tesla to measure cyclotron resonance. Effective mass is found to be $0.073 m_{e}$, which is larger than the commonly accepted bulk value of $0.068 m_{e}$.
Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric screening tunable topological phases such as quantum spin Hall insulator (QSHI), trivial insulator, higher-order topological insulator, and metallic phase, in the ground state of monolayer TaIrTe$_4$. Moreover, charge dosing has been demonstrated to convert the QSHI into a dual QSHI state. Although the band structure of monolayer TaIrTe$_4$ is central to interpreting its topological phases in transport experiments, direct experimental access to its intrinsic electronic structure has so far remained elusive. Here we report direct measurements of the monolayer TaIrTe$_4$ band structure using spatially resolved micro-angle-resolved photoemission spectroscopy (microARPES) with micrometre-scale resolution. The observed dispersions show quantitative agreement with density functional theory calculations using the Heyd-Scuseria-Ernzerhof hybrid functional, establishing the insulating ground state and revealing no evidence for strong electronic correlations. We further uncover a pronounced electron-hole asymmetry in the doping response. Whereas hole doping is readily induced by electrostatic gating, attempts to introduce electrons via gating or alkali metal deposition do not yield a rigid upward shift of the Fermi level. Fractional charge calculations demonstrate that added electrons instead drive band renormalization and shrink the band gap. Taken together, our experimental and theoretical results identify the microscopic mechanism by which induced charges reshape the band topology of monolayer TaIrTe$_4$, showing that doping can fundamentally alter the electronic structure beyond the rigid band behaviour that is typically assumed.
Migration of halide defects guides ion transport in metal halide perovskites and controls the kinetics of halide mixing and phase separation. We study the diffusion of halide vacancies and interstitials in \ce{CsPb(I_{x}Br_{1-x})_{3}} and \ce{CsPbI_{3}}/\ce{CsPbBr_{3}} heterojunctions by molecular dynamics simulations using neural network potentials trained on density functional theory calculations. We observe enhanced diffusion of both vacancies and interstitials in the mixed halide compounds compared to the single halide ones, as well as a difference in mobility between Br and I ions in the mixed compound. Diffusion across heterojunctions is governed by the interface structure, where a Br-rich interface blocks migration of vacancies in particular, but an I-rich interface is permeable.
Charge-density waves (CDWs) are ordered quantum states of conduction electrons accompanied by periodic lattice distortions. Raman scattering (RS) spectroscopy is therefore well suited for probing CDW-induced structural modulations. We investigate the CDW state in quasi-one-dimensional NbTe$_4$ using RS spectroscopy. At $T$=5~K, the resonantly enhanced Raman spectrum exhibits 25 phonon modes. Polarization-dependent measurements reveal a strong coupling between phonon-mode symmetry and crystallographic symmetry, with modes polarized parallel or perpendicular to the crystallographic $c$-axis, along which the one-dimensional structure is elongated. Temperature-dependent RS measurements identify a transition between commensurate and incommensurate CDW phases, accompanied by pronounced thermal hysteresis, with transition temperatures of approximately 45~K upon cooling and 90~K upon warming. The hysteresis width depends on the warming rate, indicating a finite nucleation rate of CDW domains and suggesting potential relevance for memory-device applications.
The Kondo effect is a paradigmatic model of strongly-correlated physics, where a magnetic impurity forms a many-body singlet with a fermionic environment. Cold gases of ytterbium (Yb) atoms have been proposed to be an ideal platform to study the Kondo effect since different internal states of the atom can be used to create both the impurity and the fermionic environment. In Yb gases, however, the atomic impurity interacts with the fermionic environment both through magnetic and potential scattering. These two scattering mechanisms counteract one another, raising the question of how robust Kondo screening remains. Here, we show that potential scattering can quench the Kondo screening in one-dimensional Yb gases; yet, strikingly, Kondo physics survives this quench in well-defined regimes. Combining analytical renormalization-group theory for a Luttinger liquid with density matrix renormalization group (DMRG) simulations, we identify a transition from a strongly- to a weakly-entangled impurity as potential scattering is increased. The two approaches show excellent agreement concerning the stability of Kondo physics throughout the different parameter regimes considered. Our results provide a quantitative criterion for the emergence of Kondo screening in one-dimensional Yb gases and delineate experimentally accessible regimes for its realization in cold-atom platforms.
The time dynamics of flagellar and ciliary beating is often neglected in theories of microswimmers, with the most common models prescribing a time-constant actuation of the surrounding fluid. By explicitly introducing a metachronal wave, coarse-grained to a sinusoidal surface slip velocity, we show that a spatial resonance between the metachronal wave and the corrugation of a confining cylindrical channel enables a ciliate to swim even when it cannot move forward in a bulk fluid. Using lubrication theory, we reduce the problem to the Adler equation that reveals an oscillatory and ballistic swimming regime. Interestingly, a ciliate can even reverse its swimming direction in a corrugated channel compared to the bulk fluid.
We present NAVIS (NAnochannel Velocity and thermal Interfacial Slip), a LAMMPS-Python scripted toolkit for computing the Navier (hydrodynamic) friction coefficient and Kapitza (thermal) resistance at arbitrary solid-fluid interfaces. NAVIS is based on equilibrium molecular dynamics (EMD) methods for calculating the linear response friction and thermal resistance at the interface, as well as the corresponding velocity and temperature slips. The methodology is based on our previous studies (Hansen, et al., Phys. Rev. E 84, 016313 (2011); Varghese et al., J. Chem. Phys. 154, 184707 (2021); Alosious, et al., J. Chem. Phys. 151, 194502 (2019); Alosious, et al., Langmuir 37, 2355-2361 (2021)), and in this work we provide a pedagogical framework for the implementation of this toolkit on two systems: (i) a water-graphene system (for hydrodynamic slip) and (ii) a water-CNT system (for thermal slip). We provide detailed instructions for performing the EMD simulations using the LAMMPS package and processing the simulation outputs using Python modules to obtain the desired quantities of interest. We expect the toolkit to be useful for computational researchers studying interfacial friction and thermal transport, key factors for efficient and practical applications of nanofluidic systems.
Theoretical spectroscopy, and more generally, electronic-structure theory, are powerful concepts for describing the complex many-body interactions in materials. They comprise a variety of methods that can capture all aspects, from ground-state properties to lattice excitations to different types of light-matter interaction, including time-resolved variants. Modern electronic-structure codes implement either a few or several of these methods. Among them, exciting is an all-electron full-potential package that has a very rich portfolio of all levels of theory, with a particular focus on excitations. It implements the linearized augmented planewave plus local orbital basis, which is known as the gold standard for solving the Kohn-Sham equations of density-functional theory. Based on this, it also offers benchmark-quality results for a wide range of excited-state methods. In this review, we provide a comprehensive overview of the features implemented in exciting in recent years, accompanied by short summaries on the state of the art of the underlying methodologies. They comprise density-functional theory and time-dependent density-functional theory, density-functional perturbation theory for phonons and electron-phonon coupling, many-body perturbation theory in terms of the $GW$ approach and the Bethe-Salpeter equation. Moreover, we capture resonant inelastic x-ray scattering, pump-probe spectroscopy as well as exciton-phonon coupling. Finally, we cover workflows and a view on data and machine learning. All aspects are demonstrated with examples for scientific relevant materials.
Copper halides Cs3Cu2X5 (X=Cl, Br, I) are promising materials for optoelectronic applications due to their high photoluminescence efficiency, stability, and large Stokes shifts. In this work, we uncover the chemical bonding origin of the Stokes shift in these materials using density functional theory calculations. Upon excitation, one [Cu2X5]3- anion undergoes sizeable local distortions, driven by Cu-X and Cu-Cu bond formation. These structural changes coincide with the formation of a self-trapped exciton, where particularly the hole is strongly localized on one anion. Analysis of the electronic structure and bonding reveals reduced antibonding interactions and enhanced bonding character in the excited state, stabilizing the distorted geometry. Our results establish a direct link between orbital-specific hole localization and bond formation. It provides a fundamental understanding of the excitation mechanism in Cs3Cu2X5 and offers design principles to tune optical properties in 0D copper halides.
Ultrafast optical excitation of metals induces a non-equilibrium energy distribution in the electronic system, with a characteristic step-structure determined by Pauli blocking. On a femtosecond timescale, electron-electron scattering drives the electrons towards a hot Fermi distribution. In this work, we present a derivation of the full electron-electron Boltzmann collision integral within the random-k approximation. Building on this approach, we trace the temporal evolution of the electron energy distribution towards equilibrium, for an excited but strongly degenerate Fermi system. Furthermore, we examine to which extent the resulting dynamics can be captured by the numerically simpler relaxation time approach, applying a constant and an energy-dependent relaxation time derived from Fermi-liquid theory. We find a better agreement with the latter, while specific features caused by the balance of scattering and reoccupation can only be captured with a full collision integral.
We report on the observation on proximity-induced superconductivity in the topological insulator BiSbTeSe2 coupled to a disordered superconductor, amorphous indium oxide (a-InO). Resistance temperature measurements reveal superconducting signatures at low temperatures, even when InO is in an insulating state, indicating the persistence of superconducting correlations. Differential conductance spectra reveal nearly periodic oscillations at higher bias, together with a pronounced zero-bias conductance peak. Both effect disappears at high temperature, marking the critical temperature (T*) of the superconducting islands in InO. These results underscore the influence of topological surface states on proximity-induced superconductivity and highlight the role of superconducting fluctuations in disordered superconductor/topological-insulator hybrid interfaces.
Mn-Sb site mixing directly impacts both the magnetic and topological properties of MnSb2Te4. This study reveals, unlike previously believed, that these anti-sites can be unevenly distributed within the crystal. To that end, a polycrystalline sample was created with a two-step synthesis using MnTe and Sb2Te3 as precursors. DC-SQUID magnetometry was used to confirm its magnetic properties. In addition, the use of High-Resolution Scanning Transmission Electron Microscopy combined with Energy-Dispersive X-ray Spectroscopy allowed us to identify the presence of an inversion-breaking asymmetry in the anti-site distribution. This reduced-symmetry structure bears resemblance to the recently proposed class of Janus materials and thus warrants further exploration due to its potential for combining topology and magnetism with other effects, such as non-linear optics and piezoelectricity. Finally, to further elucidate the interplay between site mixing, doping, topology, and magnetism, a method for growing MnSb2Te4 thin films over amorphous SiOx using Sb2Te3 seeds is introduced. The successful Van der Waals epitaxy of MnSb2Te4 over Sb2Te3 seeds using Pulsed Laser Deposition is confirmed using Scanning Transmission Electron Microscopy. This represents a crucial step in incorporating these materials into a Si-based architecture, which offers the possibility of controlling the Fermi lever via gating.
The exploration of novel topological insulators (TIs) beyond binary chalcogenides has been accelerated in pursuit of exotic quantum states and device applications. Here, the layered ternary chalcogenide Ge2Bi2Te5 is identified as a three-dimensional TI. The bulk electronic structure of Ge2Bi2Te5 features a hole-type Fermi surface at Fermi level EF, which dominates the transport properties. Moreover, an unoccupied topological surface state with a Dirac point located at 290 meV above EF has been observed. Theoretical calculations confirm a bulk bandgap and a nontrivial Z2 topological invariant (000;1). The present study demonstrates that the material family of layered tetradymite-like ternary compounds is an important platform to explore exotic topological phenomena.
We present the fabrication of nanoscale superconducting quantum interference devices (SQUIDs) at the apex of wireframe tips on self-aligned superconducting cantilever probes. The probes are made on silicon wafers using molding techniques in combination with corner lithography, which results in a nanowire frame tip with a tuneable apex structure. A shadow effect deposition using magnetron sputtering of Nb creates self-aligned superconducting wireframes on cantilevers with accompanying device circuitry. Superconducting weak links are realized at the apex of the wireframes with the use of focused ion beam nanopatterning. The realized SQUIDs have effective diameters ranging from several micrometers down to 100 nm and can be operated in magnetic fields up to 1 T. Furthermore, the nanowires in the wireframe can be used to flux modulate the SQUID locally. This fabrication process enables the production of wafer-scale templates for probes based on on-tip superconducting devices.
Spiral waves are ubiquitous signatures of non equilibrium dynamics, appearing across chemical, biological, and active systems. Yet, in many living systems these waves unfold on curved and folded surfaces whose geometry has rarely been treated as a dynamical factor. Here we show that surface curvature fundamentally shapes spiral wave behavior and can contribute to the organization of neural activity in the brain. Via analytical theory and simulations of the complex Ginzburg Landau equation (CGLE) on curved surfaces, we demonstrate that curvature enters through the Laplace Beltrami operator as a spatial modulation of effective diffusion. Gradients of this effective diffusion generate a geometric force on spiral defects, and the complex nature of the CGLE produces a complex mobility that leads to non central and non reciprocal responses. Applied to realistic cortical surfaces of the human brain, the model predicts that the pattern of cortical folding stabilizes and localizes spiral waves, while progressive smoothing of the surface erases these non equilibrium structures. This reveals that brain geometry is not a passive scaffold but an active physical constraint that shapes neural dynamics. More broadly, the same geometric mechanism provides a universal route by which curvature and topology control pattern formation across oscillatory, chemical, and active matter systems.
In recent years, interest in 2D Janus materials has grown exponentially, particularly with regard to their applications in spintronics and optoelectronic devices. The defining feature of Janus materials is the ordered arrangement of different layer terminations - creating chemically distinct surfaces and an inherent out-of-plane polarity. Among the few known Janus materials, RhSeCl is particularly intriguing as a rare example of an intrinsic Janus compound. Owing to its exceptional chemical stability, RhSeCl offers a promising platform for exploring the physics related to the Janus-structure. However, synthesising large, high-quality crystals of this compound remains a significant challenge. Here, we report a novel synthetic pathway for growing crystals up to 6 mm in lateral size via a two-step self-selecting vapour growth reaction. We further present a comprehensive comparison of newly developed synthesis routes with all previously reported methods for RhSeCl. During these investigations, we identified a previously unreported impurity that forms in specific growth pathways and demonstrate how it can be avoided to obtain phase-pure few- and monolayer flakes. We showcase the reproducibility of the process to obtain high-quality, large single-crystals and flakes.
Colloidal semiconductor nanocrystals are promising building blocks for optoelectronics due to their solution processability, spectral tunability, and ability to self-assemble into complex architectures. However, their use in lasing application remains limited by high working thresholds, rapid nonradiative losses from Auger recombination, and sensitivity to environmental conditions. Here, we report hybrid microscale supraparticles composed of core/shell CdSe/ZnS quantum dots (QDs) and CdSe/CdxZn1-xS nanoplatelets (NPLs), which overcome these limitations through efficient, cavity-mediated energy funneling and coupling. Broadband absorbing QDs rapidly transfer excitation to narrow emitting NPLs, enabling stable whispering gallery mode lasing with a low threshold of 0.35 mJ/cm2. These supraparticles retain optical performance after prolonged exposure to air, water, and continuous irradiation, offering practical advantages for optoelectronic devices and advanced pigment technologies. Ultimately, our approach provides a versatile, programmable platform for optical amplification and tunable emission control within colloidal photonic architectures. Keywords
The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium nitride on silicon substrates offers the opportunity to leverage existing expertise and wafer-scale manufacturing to integrate bright quantum emitters in this material within cavities, diodes, and photonic circuits. Until now, it has only been possible to grow GaN QEs at uncontrolled depths on sapphire substrates, which is disadvantageous for potential device architectures. Here, we report a method to produce GaN QEs by metal-organic vapor phase epitaxy at a controlled depth in the crystal through the application of silane treatment and subsequent growth of 3D islands. We demonstrate this process on highly technologically relevant silicon substrates, producing room-temperature QEs with a high Debye Waller factor and strongly anti-bunched emission.
Tungsten exhibits exceptional temperature and radiation resistance, making it well-suited for applications in extreme environments such as nuclear fusion reactors. Additive manufacturing offers geometrical design freedom and rapid prototyping capabilities for these applications, provided the intrinsic brittleness and low printability of tungsten can be overcome. Designing tungsten alloys with improved ductility, and thus printability in additive manufacturing, can be accelerated using a computationally derived performance predictor to screen out brittle compositions. Calculations of the Pugh ratio using density functional theory may serve this purpose, given its correlation with ductility. This process can be made more efficient through the use of machine learning interatomic potentials to accelerate density functional theory calculations. Here, we demonstrate that machine learning interatomic potentials can effectively identify optimal alloy compositions in the W-Ta-Nb system along the melting point-Pugh ratio Pareto front. The trend in Pugh ratio as a function of tungsten fraction is explained in terms of the electronic density of states at the Fermi level. Experimental validation reveals a strong correlation between the computed Pugh ratio and the observed crack fractions in additively manufactured alloys. Notably, the two alloys predicted to have the highest Pugh ratio values, W20Ta70Nb10 and W30Ta60Nb10, exhibit no intergranular microcracking in experiments.
Using constrained-path quantum Monte Carlo, we map the ground-state phase diagram versus the nearest-neighbor (NN) attraction $V$ and spin-dependent hopping anisotropy $α$ for the two-dimensional attractive $t$--$U$--$V$ Hubbard model at filling $n\simeq0.85$. We identify an onsite $s$-wave superfluid, a Cooper pair Bose metal with an uncondensed Bose surface, and an oriented equal-spin triplet $p$-wave pairing phase. The NN attraction activates the odd-parity channel, while hopping anisotropy suppresses the competing $s$-wave coherence and selects a $p_x/p_y$ polar axis, and thus lowers the critical $|V_c|$ for the onset of triplet-dominant $p$-wave pairing. A channel-resolved Landau analysis provides a criterion for the Landau $p$-wave scale $V_c^{\mathrm L}(α)$, consistent with the observed anisotropy dependence of $|V_c|$. Our results establish how NN interaction and Fermi surface anisotropy cooperate to generate the oriented triplet $p$-wave pairing, and suggest that cold-atom and altermagnetic platforms could potentially realize this mechanism.
We have performed density functional theory (DFT) calculations to characterize the energetics, and the atomic and electronic structure, of stacking faults in GaN, both in the stable hexagonal wurtzite (wz) phase and in the metastable cubic zincblende (zb) phase. In wz GaN, SFs on the (0001) planes can be divided into three different intrinsic stacking faults (I1, I2, and I3) and oneextrinsic stacking fault (E). In zb GaN, SFs form along (111) directions, giving one type each of intrinsic, extrinsic and twin SFs. Based on the calculated formation energy, I1 is the most stable SF of wz GaN in agreement with experiment. For zb GaN, the intrinsic stacking fault is the most dominant planar defect. To characterize the effect of the stacking faults on the electronic structure of the material, we examined the band density. We found that the bands near the valence band maximum in wz GaN are localised on the Ga-polar side of the stacking fault (i.e. on the Ga side of the Ga-N bonds perpendicular to the SF), with the bands near the conduction band minimum more on the N-polar side, though somewhat delocalised. We found the opposite trend in zb GaN; this behaviour is caused by a redistribution of charge near the interface. We also show the band offsets for the stacking faults, finding that they are very sensitive to local conditions, but can all be described as type II interfaces, with the presence of a stacking fault reducing the gap locally.
Impact ionization probabilities were calculated in a CdHgTe quantum well, where the distance between electron subbands is close to the band gap energy. This band structure enables impact ionization with small momentum transfer for electrons in the second subband. The study demonstrates that such processes increase the impact ionization probability by approximately two orders of magnitude compared to the impact ionization probability for electrons in the first subband, for which transitions with small momentum changes are impossible. The probability of single impact ionization during the electron energy loss due to optical phonon emission is estimated. Experimental methods for detecting impact ionization in this structure are discussed.
We investigate the crystallization of crosslinked and entangled polymers under external deformation using a coarse-grained poly(vinyl alcohol) (CG-PVA) model and molecular dynamics simulations. Following uniaxial deformation, the systems are cooled at a constant rate to form semi-crystalline states and subsequently heated at a constant rate to induce melting. For unstretched systems, network junctions do not significantly affect the nucleation temperature but increase the amorphous fraction and reduce the melting temperature. Uniaxial deformation accelerates nucleation and markedly increases the crystallization temperature, with more strongly crosslinked polymers exhibiting larger shifts that correlate with an enhanced orientation order parameter. We further compare cooling and heating cycles under constant-strain and constant-stress conditions. Under constant stress, crystallization induces additional elongation beyond the initial pre-stretch and leads to pronounced mechanical hysteresis upon heating, a behavior characteristic of reversible shape-memory materials.